Extraordinary magnetoresistance in shunted chemical vapor deposition grown graphene devices

3, 5 and 10 nm thick Ti decorated chemical-vapor-deposition (CVD) grown graphene devices (Ti/Gr) for NH3 detection were fabricated, and their sensing performances were great promoted by visible light illumination.

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Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper

Science Advances ◽

10.1126/sciadv.1500222 ◽

2015 ◽

Vol 1 (6) ◽

pp. e1500222 ◽

Cited By ~ 360

Author(s):

Luca Banszerus ◽

Michael Schmitz ◽

Stephan Engels ◽

Jan Dauber ◽

Martin Oellers ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Copper Substrate ◽

High Mobility ◽

Chemical Vapor ◽

Magnetic Field Sensors ◽

Exfoliated Graphene ◽

Cost Efficient ◽

Grown Graphene ◽

Graphene Devices

Graphene research has prospered impressively in the past few years, and promising applications such as high-frequency transistors, magnetic field sensors, and flexible optoelectronics are just waiting for a scalable and cost-efficient fabrication technology to produce high-mobility graphene. Although significant progress has been made in chemical vapor deposition (CVD) and epitaxial growth of graphene, the carrier mobility obtained with these techniques is still significantly lower than what is achieved using exfoliated graphene. We show that the quality of CVD-grown graphene depends critically on the used transfer process, and we report on an advanced transfer technique that allows both reusing the copper substrate of the CVD growth and making devices with mobilities as high as 350,000 cm2V–1s–1, thus rivaling exfoliated graphene.

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Superior characteristics of graphene field effect transistor enclosed by chemical-vapor-deposition-grown hexagonal boron nitride

Journal of Materials Chemistry C ◽

10.1039/c4tc01176g ◽

2014 ◽

Vol 2 (37) ◽

pp. 7776-7784 ◽

Cited By ~ 15

Author(s):

Muhammad Waqas Iqbal ◽

Muhammad Zahir Iqbal ◽

Xiaozhan Jin ◽

Jonghwa Eom ◽

Chanyong Hwang

Keyword(s):

Chemical Vapor Deposition ◽

Boron Nitride ◽

Vapor Deposition ◽

Hexagonal Boron Nitride ◽

Chemical Vapor ◽

Graphene Field Effect Transistor ◽

Effect Transistor ◽

Grown Graphene ◽

Graphene Devices

We report the characterization of high-quality chemical-vapor-deposition (CVD)-grown graphene devices on CVD-grown hexagonal boron nitride (h-BN).

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Tuning of electronic properties of chemical vapor deposition grown graphene via self-assembled monolayer doping

Materials Today Proceedings ◽

10.1016/j.matpr.2020.11.352 ◽

2020 ◽

Author(s):

Anand Kumar Singh ◽

Vivek Chaudhary ◽

Arun Kumar Singh ◽

S.R.P. Sinha

Keyword(s):

Chemical Vapor Deposition ◽

Electronic Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Self Assembled Monolayer ◽

Self Assembled ◽

Grown Graphene

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Flexible and Transparent Dielectric Film with a High Dielectric Constant Using Chemical Vapor Deposition-Grown Graphene Interlayer

ACS Nano ◽

10.1021/nn406058g ◽

2013 ◽

Vol 8 (1) ◽

pp. 269-274 ◽

Cited By ~ 51

Author(s):

Jin-Young Kim ◽

Jongho Lee ◽

Wi Hyoung Lee ◽

Iskandar N. Kholmanov ◽

Ji Won Suk ◽

...

Keyword(s):

Dielectric Constant ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

High Dielectric Constant ◽

Dielectric Film ◽

Chemical Vapor ◽

Transparent Dielectric ◽

Grown Graphene ◽

High Dielectric

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The Effects of Hydrogen Flowrate during Pre-Annealing on Graphene Growth by Chemical Vapor Deposition Using Methanol as a Liquid Carbon Precursor

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.290.107 ◽

2019 ◽

Vol 290 ◽

pp. 107-112

Author(s):

Raed Abdalrheem ◽

Fong Kwong Yam ◽

Abdul Razak Ibrahim ◽

Khi Poay Beh ◽

Hwee San Lim ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Light Transmittance ◽

High Hydrogen ◽

Flow Rates ◽

Hydrogen Flow ◽

Number Of Layers ◽

Crystallite Sizes ◽

Grown Graphene

Studying an influence of several parameters on Chemical Vapor Deposition (CVD) used for graphene synthesis is crucial to optimizing the graphene quality to be Compatible with advanced devices. The effect of different hydrogen (H2) flow-rates (0, 50, 100, 150, 200, 250, and 300 sccm) during the pre-annealing process on CVD grown graphene have been reported. This study revealed that hydrogen flow rates during annealing changed the surface roughness/smoothness of the copper substrates. For high hydrogen flow rates, the smoothing effect was increased. Furthermore, the annealed graphene samples emerged a deferent number of layers because of morphological surface changes. According to Raman D- to G-band intensity ratios (ID/IG), the graphene quality was influenced by the annealing hydrogen flowrate. The visible light transmittance values of the grown graphene samples confirmed a few number of layers (mono to seven-layer). Mostly, the samples which annealed under moderate hydrogen flow rates showed less defects intensities and higher crystallite sizes.

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