Low-temperature, high-mobility, solution-processed metal oxide semiconductors fabricated with oxygen radical assisted perchlorate aqueous precursors

2017 ◽  
Vol 53 (48) ◽  
pp. 6436-6439 ◽  
Author(s):  
Peixiong Gao ◽  
Linfeng Lan ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
Yuzhi Li ◽  
...  
Keyword(s):  
Low Temperature ◽  
Metal Oxide ◽  
High Mobility ◽  
Oxygen Radical ◽  
Fuel Additives ◽  
Chemical Route ◽  
Solution Processed ◽  
Oxide Semiconductors ◽  
General Chemical ◽  
Mobility Solution

In this report, a simple and general chemical route for fabricating MO semiconducting films at a relatively low temperature without any fuel additives or special annealing steps was demonstrated.

scholarly journals Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

Materials ◽  
2017 ◽  
Vol 10 (6) ◽  
pp. 612 ◽  
Author(s):  
Jae Heo ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Jingu Kang ◽  
Ho-Hyun Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
Mobility Solution

Monolithically patterned high mobility solution-processed metal-oxide TFTs with metallic capping layers

2014 ◽  
Author(s):  
Kyung Tae Kim ◽  
Jae Hyun Kim ◽  
Il-Wan Jang ◽  
Chan Ho Jo ◽  
Jaekyun Kim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Mobility ◽  
Solution Processed ◽  
Mobility Solution ◽  
Oxide Tfts

In-Situ Metallic Oxide Capping for High Mobility Solution-Processed Metal-Oxide TFTs

2014 ◽  
Vol 35 (8) ◽  
pp. 850-852 ◽  
Author(s):  
Kyung Tae Kim ◽  
Jaekyun Kim ◽  
Yong-Hoon Kim ◽  
Sung Kyu Park
Keyword(s):  
Metal Oxide ◽  
High Mobility ◽  
Metallic Oxide ◽  
Solution Processed ◽  
Mobility Solution ◽  
Oxide Tfts

scholarly journals Scalable High-Speed Hybrid Complementary Integrated Circuits based on Solution-Processed Organic and Amorphous Metal Oxide Semiconductors

2021 ◽  
Author(s):  
Shun Watanabe ◽  
Xiaozhu Wei ◽  
Shohei Kumagai ◽  
Tatsuyuki Makita ◽  
Kotaro Tsuzuku ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
High Speed ◽  
High Mobility ◽  
Amorphous Metal ◽  
Metal Oxide Semiconductors ◽  
Ring Oscillators ◽  
Solution Processed ◽  
Oxide Semiconductors ◽  
Amorphous Metal Oxide

Abstract Solution-processed single-crystal organic semiconductors (OSCs) and amorphous metal oxide semiconductors (MOSs) are promising for high-mobility, p- and n-channel thin-film transistors (TFTs), respectively. Organic−inorganic hybrid complementary circuits hence have great potential to satisfy practical requirements; however, some chemical incompatibilities between OSCs and MOSs, such as heat and chemical resistance, conventionally make it difficult to rationally integrate TFTs based on solution-processed OSC and MOS into the same substrates. In this work, we achieved a rational integration method based on the solution-processed semiconductors by carefully managing the device configuration and the deposition and patterning techniques from materials point of view. The balanced high performances as well as the uniform fabrication of the TFTs led to densely integrated five-stage ring oscillators with the stage propagation delay of 1.3 µs, which is the fastest operation among ever reported complementary ring oscillators based on solution-processed semiconductors.

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