Nonvolatile ternary resistive switching memory devices based on the polymer composites containing zinc oxide nanoparticles

2018 ◽  
Vol 20 (8) ◽  
pp. 5771-5779 ◽  
Author(s):  
Yanmei Sun ◽  
Dianzhong Wen ◽  
Xuduo Bai
Keyword(s):  
Zinc Oxide ◽  
Polymer Blends ◽  
Polymer Composites ◽  
Resistive Switching ◽  
Zno Nanoparticles ◽  
Zinc Oxide Nanoparticles ◽  
Oxide Nanoparticles ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory

Nonvolatile ternary memory devices were fabricated from the composites polymer blends containing zinc oxide (ZnO) nanoparticles.

Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices

2016 ◽  
Vol 72 (2) ◽  
pp. 25-33 ◽  
Author(s):  
Y.-C. Chen ◽  
Y.-F. Chang ◽  
X. Wu ◽  
M. Guo ◽  
B. Fowler ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory

Microbiote shift in sequencing batch reactors in response to antimicrobial ZnO nanoparticles

RSC Advances ◽  
2016 ◽  
Vol 6 (111) ◽  
pp. 110108-110111 ◽  
Author(s):  
Zhenghui Liu ◽  
Huifang Zhou ◽  
Jiefeng Liu ◽  
Xudong Yin ◽  
Yufeng Mao ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Wastewater Treatment ◽  
Adverse Effects ◽  
Zno Nanoparticles ◽  
Zinc Oxide Nanoparticles ◽  
Wastewater Treatment Plants ◽  
Oxide Nanoparticles ◽  
Batch Reactors ◽  
Sequencing Batch Reactors ◽  
Zno Nps

Zinc oxide nanoparticles (ZnO NPs) have been monitored in wastewater treatment plants as their potential adverse effects on functional microorganisms have been causing increasing concern.

Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

2021 ◽  
Vol 9 (39) ◽  
pp. 13755-13760
Author(s):  
Songcheng Hu ◽  
Zhenhua Tang ◽  
Li Zhang ◽  
Dijie Yao ◽  
Zhigang Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Carrier Transport ◽  
Electronic Devices ◽  
Differential Resistance ◽  
Memory Devices ◽  
Transport Mechanisms ◽  
Resistive Switching Memory ◽  
Potential Applications ◽  
Switching Memory

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

All-inorganic perovskite Cs4PbBr6 thin films in optoelectronic resistive switching memory devices with a logic application

2019 ◽  
Vol 45 (5) ◽  
pp. 5724-5730 ◽  
Author(s):  
Huaizu Cai ◽  
Meimei Lao ◽  
Jun Xu ◽  
Yukai Chen ◽  
Chujie Zhong ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Memory Devices ◽  
Inorganic Perovskite ◽  
Resistive Switching Memory ◽  
Switching Memory

Top-Down Synthesis of Hollow Graphene Nanostructures for Use in Resistive Switching Memory Devices

2017 ◽  
Vol 3 (10) ◽  
pp. 1700264 ◽  
Author(s):  
Gopinathan Anoop ◽  
Tae Yeon Kim ◽  
Hye Jeong Lee ◽  
Varij Panwar ◽  
Jeong Hun Kwak ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Top Down ◽  
Resistive Switching Memory ◽  
Switching Memory ◽  
Graphene Nanostructures
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