Fully transparent conformal organic thin-film transistor array and its application as LED front driving

Nanoscale ◽  
2018 ◽  
Vol 10 (8) ◽  
pp. 3613-3620 ◽  
Author(s):  
Nan Cui ◽  
Hang Ren ◽  
Qingxin Tang ◽  
Xiaoli Zhao ◽  
Yanhong Tong ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Solution Processed ◽  
Grid Electrode ◽  
Metal Grid ◽  
Effect Transistor

A fully transparent conformal organic thin-film field-effect transistor array is obtained based on an ultrathin embedded metal-grid electrode and a solution-processed C8-BTBT film.

Organic Thin Film Transistor Using a Photo-Curable Organic/Inorganic Hybrid Material as a Gate Dielectric

2008 ◽  
Vol 8 (9) ◽  
pp. 4561-4564 ◽  
Author(s):  
Do-Hoon Hwang ◽  
Yong Suk Yang ◽  
Jeong-Ik Lee ◽  
Seong Hyun Kim ◽  
Oun-Ho Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Dissipation Factor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Metal Insulator Metal ◽  
Oligomeric Silsesquioxane ◽  
Photo Acid Generator

A polyhedral oligomeric silsesquioxane derivative (POSS-OXT) containing photo-curable 4-membered cyclic oxetane functional groups was used as a gate dielectric of organic field effect transistor. The POSS-OXT was cross-linked and completely solidified by UV irradiation in the presence of a selected photo acid generator, and pinhole free uniform thin film was obtained. We fabricated a metal/insulator/metal device of Au/POSS-OXT (300 nm)/Au with area of 0.7 mm2 and the measured leakage current and capacitance of the device to evaluate the insulating properties of the POSS-OXT thin film. The maximum current was about 0.25 nA when 40 V was applied to the device. The observed values of the capacitance per unit area and dissipation factor were 11.4 nF/cm2 and 0.025, respectively. We fabricated an organic thin film transistor with pentacene as the active semiconductor and the photo-cross-linked POSS-OXT as an insulator. A field effect carrier mobility of 0.03 cm2/V·s was obtained with the device.

scholarly journals Influence of polymer binder on the performance of diF-TES-ADT based organic field effect transistor

CrystEngComm ◽  
2021 ◽  
Author(s):  
Tommaso Salzillo ◽  
Francesco D'Amico ◽  
Nieves Montes ◽  
Raphael Pfattner ◽  
Marta Mas-Torrent
Keyword(s):  
Thin Film ◽  
Polymer Blend ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Polymer Binder ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

The presented work concerns the study of solution sheared organic thin film transistors based on a 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT) polymer blend.

Flip-flop logic circuit based on fully solution-processed organic thin film transistor devices with reduced variations in electrical performance

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DK03 ◽  
Author(s):  
Yasunori Takeda ◽  
Yudai Yoshimura ◽  
Faiz Adi Ezarudin Bin Adib ◽  
Daisuke Kumaki ◽  
Kenjiro Fukuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Logic Circuit ◽  
Electrical Performance ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Solution Processed ◽  
Flip Flop

Preparation and characteristics of flexible all-organic thin-film field-effect transistor

2003 ◽  
Vol 48 (15) ◽  
pp. 1554-1557 ◽  
Author(s):  
Yong Qiu ◽  
Yuanchuan Hu ◽  
Guifang Dong ◽  
Liduo Wang ◽  
Junfeng Xie ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Thin Film ◽  
Effect Transistor
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