Metal–insulator–semiconductor field-effect transistors (MISFETs) using p-type SnS and nanometer-thick Al2S3 layers

RSC Advances ◽

10.1039/c7ra00041c ◽

2017 ◽

Vol 7 (18) ◽

pp. 11111-11117 ◽

Author(s):

Devika Mudusu ◽

Koteeswara Reddy Nandanapalli ◽

Sreekantha Reddy Dugasani ◽

Ramesh Karuppannan ◽

Gunasekhar Kothakota Ramakrishna Reddy ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Turn On ◽

Rectification Factor ◽

SnS based MISFET devices exhibit a high turn-on voltage of +5.13 V and rectification factor of 1383@+6 V.

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Device operation of p-i-p type diamond metal–insulator–semiconductor field effect transistors with sub-micrometer channel

Diamond and Related Materials ◽

10.1016/j.diamond.2004.12.029 ◽

2005 ◽

Vol 14 (3-7) ◽

pp. 509-513 ◽

Author(s):

Nobuyuki Kawakami ◽

Yoshihiro Yokota ◽

Kazushi Hayashi ◽

Takeshi Tachibana ◽

Koji Kobashi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

P Type ◽

Device Operation

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Diffusion Control Techniques for TiN Stacked Metal Gate Electrodes for p-Type Metal Insulator Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1859 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 1859-1864 ◽

Author(s):

Shinsuke Sakashita ◽

Takaaki Kawahara ◽

Masaharu Mizutani ◽

Masao Inoue ◽

Kenichi Mori ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Diffusion Control ◽

Metal Gate Electrodes ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Control Techniques ◽

Gate Electrodes ◽

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Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3528334 ◽

2010 ◽

Vol 97 (25) ◽

pp. 253502 ◽

Author(s):

Yuji Urabe ◽

Masafumi Yokoyama ◽

Hideki Takagi ◽

Tetsuji Yasuda ◽

Noriyuki Miyata ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.4758995 ◽

2012 ◽

Vol 101 (15) ◽

pp. 153504 ◽

Author(s):

Mina J. Hanna ◽

Han Zhao ◽

Jack C. Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Schottky Emission ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Field effect studies on p-type PbTe metal/insulator/semiconductor structures

Thin Solid Films ◽

10.1016/0040-6090(82)90012-8 ◽

1982 ◽

Vol 92 (3) ◽

pp. 295-301

Author(s):

A.L. Dawar ◽

O.P. Taneja ◽

S.K. Paradkar ◽

Partap Kumar ◽

P.C. Mathur

Keyword(s):

Field Effect ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

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Consequences of anion vacancy nearest‐neighbor hopping in III‐V compound semiconductors: Drift in InP metal‐insulator‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.334431 ◽

1985 ◽

Vol 57 (6) ◽

pp. 1956-1960 ◽

Author(s):

J. A. Van Vechten ◽

J. F. Wager

Keyword(s):

Field Effect ◽

Nearest Neighbor ◽

Field Effect Transistors ◽

Compound Semiconductors ◽

Anion Vacancy ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Fabrication of Hydrogenated Diamond Metal–Insulator–Semiconductor Field-Effect Transistors

Biosensors and Biodetection - Methods in Molecular Biology ◽

10.1007/978-1-4939-6911-1_15 ◽

2017 ◽

pp. 217-232 ◽

Author(s):

Jiangwei Liu ◽

Yasuo Koide

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

Journal of Materials Chemistry C ◽

10.1039/c9tc02468a ◽

2019 ◽

Vol 7 (29) ◽

pp. 8855-8860 ◽

Author(s):

Janghyuk Kim ◽

Marko J. Tadjer ◽

Michael A. Mastro ◽

Jihyun Kim

Keyword(s):

Plasma Treatment ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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A model for nonvolatile p-channel metal–ferroelectric–metal–insulator–semiconductor field-effect transistors (MFMIS FETs)

Journal of Computational Electronics ◽

10.1007/s10825-019-01320-8 ◽

2019 ◽

Vol 18 (2) ◽

pp. 527-533

Author(s):

Jing Sun ◽

Yanping Li ◽

Lei Cao

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Performance of Germanium Metal-Insulator-Semiconductor Field Effect Transistors with Nickel Germanide Source/Drain

ECS Meeting Abstracts ◽

10.1149/ma2008-01/16/669 ◽

2008 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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