Diffusion Control Techniques for TiN Stacked Metal Gate Electrodes for p-Type Metal Insulator Semiconductor Field Effect Transistors

2007 ◽  
Vol 46 (4B) ◽  
pp. 1859-1864 ◽  
Author(s):  
Shinsuke Sakashita ◽  
Takaaki Kawahara ◽  
Masaharu Mizutani ◽  
Masao Inoue ◽  
Kenichi Mori ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Diffusion Control ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Control Techniques ◽  
Gate Electrodes ◽  
P Type

scholarly journals Carbon-paste nanocomposites as unconventional gate electrodes for electrolyte-gated organic field-effect transistors: electrical modulation and bio-sensing

2019 ◽  
Vol 7 (47) ◽  
pp. 14993-14998 ◽  
Author(s):  
Jose Muñoz ◽  
Francesca Leonardi ◽  
Tayfun Özmen ◽  
Marta Riba-Moliner ◽  
Arantzazu González-Campo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Carbon Paste ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Sensing Applications ◽  
Electrical Modulation ◽  
First Time

Nanocomposite carbon-paste electrodes (NC-CPEs) have been investigated for the first time in electrolyte-gated organic field-effect transistors (EGOFETs) as a replacement of conventional metal gate electrodes for bio-sensing applications.

Device operation of p-i-p type diamond metal–insulator–semiconductor field effect transistors with sub-micrometer channel

2005 ◽  
Vol 14 (3-7) ◽  
pp. 509-513 ◽  
Author(s):  
Nobuyuki Kawakami ◽  
Yoshihiro Yokota ◽  
Kazushi Hayashi ◽  
Takeshi Tachibana ◽  
Koji Kobashi
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
P Type ◽  
Device Operation

scholarly journals Metal–insulator–semiconductor field-effect transistors (MISFETs) using p-type SnS and nanometer-thick Al2S3 layers

RSC Advances ◽  
2017 ◽  
Vol 7 (18) ◽  
pp. 11111-11117 ◽  
Author(s):  
Devika Mudusu ◽  
Koteeswara Reddy Nandanapalli ◽  
Sreekantha Reddy Dugasani ◽  
Ramesh Karuppannan ◽  
Gunasekhar Kothakota Ramakrishna Reddy ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Turn On ◽  
Rectification Factor ◽  
P Type

SnS based MISFET devices exhibit a high turn-on voltage of +5.13 V and rectification factor of 1383@+6 V.

Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

2010 ◽  
Vol 97 (25) ◽  
pp. 253502 ◽  
Author(s):  
Yuji Urabe ◽  
Masafumi Yokoyama ◽  
Hideki Takagi ◽  
Tetsuji Yasuda ◽  
Noriyuki Miyata ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Field effect studies on p-type PbTe metal/insulator/semiconductor structures

1982 ◽  
Vol 92 (3) ◽  
pp. 295-301
Author(s):  
A.L. Dawar ◽  
O.P. Taneja ◽  
S.K. Paradkar ◽  
Partap Kumar ◽  
P.C. Mathur
Keyword(s):  
Field Effect ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
P Type

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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