Effect of Surface Treatment of Gate-Insulator on Uniformity of Bottom-Gate ZnO Thin Film Transistors

2010 ◽  
Vol 13 (4) ◽  
pp. H101 ◽  
Author(s):  
Mamoru Furuta ◽  
Takashi Nakanishi ◽  
Mutsumi Kimura ◽  
Takahiro Hiramatsu ◽  
Tokiyoshi Matsuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Treatment ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Bottom Gate ◽  
Effect Of Surface

Effect of Double-Layered Al[sub 2]O[sub 3] Gate Insulator on the Bias Stability of ZnO Thin Film Transistors

2010 ◽  
Vol 13 (8) ◽  
pp. H264 ◽  
Author(s):  
Sung-Min Yoon ◽  
Sang-Hee Ko Park ◽  
Shin-Hyuk Yang ◽  
Chun-Won Byun ◽  
Chi-Sun Hwang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Bias Stability

Low-voltage-drive and high output current ZnO thin-film transistors with sputtering SiO2 as gate insulator

2010 ◽  
Vol 10 (5) ◽  
pp. 1306-1308 ◽  
Author(s):  
L. Zhang ◽  
J. Li ◽  
X.W. Zhang ◽  
D.B. Yu ◽  
H.P. Lin Khizar-ul-Haq ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Output Current ◽  
High Output

scholarly journals Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27699-27706 ◽  
Author(s):  
Manoj Kumar ◽  
Hakyung Jeong ◽  
Dongjin Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Gate Insulator ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Insulator Interface ◽  
Ag Nanowires ◽  
Nonvolatile Memory Devices

Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.

Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors

2017 ◽  
Vol 19 (23) ◽  
pp. 15521-15529 ◽  
Author(s):  
Sohee Kim ◽  
Taewook Ha ◽  
Sungmi Yoo ◽  
Jae-Won Ka ◽  
Jinsoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Surface Treatment ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Self Assembled Monolayers ◽  
Organic Thin Film ◽  
Assembled Monolayers

We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST).

Coupling Top- and Bottom-Gate ZnO Thin Film Transistors for Low Voltage, High Gain Inverter

2010 ◽  
Vol 13 (6) ◽  
pp. H194 ◽  
Author(s):  
Min Suk Oh ◽  
Jeong In Han ◽  
Kimoon Lee ◽  
Byoung H. Lee ◽  
Myung M. Sung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
High Gain ◽  
Zno Thin Film ◽  
Bottom Gate
Sign in / Sign up

Export Citation Format

Share Document