Effect of Double-Layered Al[sub 2]O[sub 3] Gate Insulator on the Bias Stability of ZnO Thin Film Transistors

2010 ◽  
Vol 13 (8) ◽  
pp. H264 ◽  
Author(s):  
Sung-Min Yoon ◽  
Sang-Hee Ko Park ◽  
Shin-Hyuk Yang ◽  
Chun-Won Byun ◽  
Chi-Sun Hwang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Bias Stability

Effect of Surface Treatment of Gate-Insulator on Uniformity of Bottom-Gate ZnO Thin Film Transistors

2010 ◽  
Vol 13 (4) ◽  
pp. H101 ◽  
Author(s):  
Mamoru Furuta ◽  
Takashi Nakanishi ◽  
Mutsumi Kimura ◽  
Takahiro Hiramatsu ◽  
Tokiyoshi Matsuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Treatment ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Bottom Gate ◽  
Effect Of Surface

Low-voltage-drive and high output current ZnO thin-film transistors with sputtering SiO2 as gate insulator

2010 ◽  
Vol 10 (5) ◽  
pp. 1306-1308 ◽  
Author(s):  
L. Zhang ◽  
J. Li ◽  
X.W. Zhang ◽  
D.B. Yu ◽  
H.P. Lin Khizar-ul-Haq ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Output Current ◽  
High Output

scholarly journals Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27699-27706 ◽  
Author(s):  
Manoj Kumar ◽  
Hakyung Jeong ◽  
Dongjin Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Gate Insulator ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Insulator Interface ◽  
Ag Nanowires ◽  
Nonvolatile Memory Devices

Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.

Surface Modification of a Polyimide Gate Insulator with an Yttrium Oxide Interlayer for Aqueous-Solution-Processed ZnO Thin-Film Transistors

Langmuir ◽  
2013 ◽  
Vol 29 (23) ◽  
pp. 7143-7150 ◽  
Author(s):  
Kwang-Suk Jang ◽  
Duyoung Wee ◽  
Yun Ho Kim ◽  
Jinsoo Kim ◽  
Taek Ahn ◽  
...  
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Surface Modification ◽  
Yttrium Oxide ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Solution Processed

ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate

2012 ◽  
Vol 69 ◽  
pp. 27-30 ◽  
Author(s):  
Gun Woo Hyung ◽  
Jaehoon Park ◽  
Ja Ryong Koo ◽  
Kyung Min Choi ◽  
Sang Jik Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film

Studies on Al-doped ZnO thin-film transistors with Pb(Zr0.3Ti0.7)O3 gate insulator

2011 ◽  
Vol 125 (1) ◽  
pp. 162-167
Author(s):  
Z. H. Chen ◽  
X. B. Liu ◽  
M. C. Chen ◽  
H. H. Yu ◽  
A. Q. Jiang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Doped Zno

Low leakage current—stacked MgO∕Bi1.5Zn1.0Nb1.5O7 gate insulator— for low voltage ZnO thin film transistors

2006 ◽  
Vol 89 (20) ◽  
pp. 202908 ◽  
Author(s):  
Mi-Hwa Lim ◽  
KyongTae Kang ◽  
Ho-Gi Kim ◽  
Il-Doo Kim ◽  
YongWoo Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Low Leakage ◽  
Low Leakage Current
Sign in / Sign up

Export Citation Format

Share Document