High electron mobility of β-HgS colloidal quantum dots with doubly occupied quantum states

RSC Advances ◽

10.1039/c7ra07193k ◽

2017 ◽

Vol 7 (61) ◽

pp. 38166-38170 ◽

Author(s):

Jaekyun Kim ◽

Bitna Yoon ◽

Jaehyun Kim ◽

Yunchang Choi ◽

Young-Wan Kwon ◽

...

Keyword(s):

Steady State ◽

Quantum Dot ◽

Electron Mobility ◽

Quantum States ◽

Colloidal Quantum Dots ◽

High Electron ◽

Mercury Sulfide ◽

High Electron Mobility ◽

Colloidal Quantum Dot ◽

Electron Occupation

Steady-state electron occupation of the lowest quantum state in the conduction band of a colloidal quantum dot gives rise to unique electrical properties. An electron mobility of 1.29 cm2 V−1 s−1 was measured in a mercury sulfide quantum dot FET.

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Rapid Photonic Processing of High-Electron-Mobility PbS Colloidal Quantum Dot Transistors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c06306 ◽

2020 ◽

Vol 12 (28) ◽

pp. 31591-31600

Author(s):

Mohamad I. Nugraha ◽

Emre Yarali ◽

Yuliar Firdaus ◽

Yuanbao Lin ◽

Abdulrahman El-Labban ◽

...

Keyword(s):

Quantum Dot ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Colloidal Quantum Dot ◽

Photonic Processing

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The radiation hardness of Quantum Dot embedded in high electron mobility transistor force-sensitive structure

IEEE Sensors Journal ◽

10.1109/jsen.2021.3107859 ◽

2021 ◽

pp. 1-1

Author(s):

Ruirong Wang ◽

Hao Guo ◽

Jun Tang ◽

Jinping Liu ◽

Jun Liu ◽

...

Keyword(s):

Quantum Dot ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Radiation Hardness ◽

High Electron ◽

High Electron Mobility ◽

Sensitive Structure

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Current–voltage characteristics in III-nitride quantum dot heterostructure based high electron mobility transistors

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2012.07.026 ◽

2012 ◽

Vol 46 ◽

pp. 174-176 ◽

Author(s):

A. Asgari ◽

N. Fazli

Keyword(s):

Quantum Dot ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Voltage ◽

Current Voltage Characteristics

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Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4935223 ◽

2015 ◽

Vol 107 (19) ◽

pp. 193506 ◽

Author(s):

M. Ťapajna ◽

O. Hilt ◽

E. Bahat-Treidel ◽

J. Würfl ◽

J. Kuzmík

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated with Indium-Tin-Oxide Electrodes

IEEE Electron Device Letters ◽

10.1109/led.2020.3048009 ◽

2020 ◽

pp. 1-1

Author(s):

Chih-Yao Chang ◽

Chun-Ta Hsu ◽

Yao-Luen Shen ◽

Tian-Li Wu ◽

Wei-Hung Kuo ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Oxide Electrodes

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Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

Solid-State Electronics ◽

10.1016/j.sse.2021.108050 ◽

2021 ◽

pp. 108050

Author(s):

Maria Glória Caño de Andrade ◽

Luis Felipe de Oliveira Bergamim ◽

Braz Baptista Júnior ◽

Carlos Roberto Nogueira ◽

Fábio Alex da Silva ◽

...

Keyword(s):

Electron Mobility ◽

Low Frequency ◽

High Electron Mobility Transistors ◽

Frequency Noise ◽

High Electron ◽

Low Frequency Noise ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Polymer Crystals: Approaching Crystal Structure and High Electron Mobility in Conjugated Polymer Crystals (Adv. Mater. 10/2021)

Advanced Materials ◽

10.1002/adma.202170075 ◽

2021 ◽

Vol 33 (10) ◽

pp. 2170075

Author(s):

Ze‐Fan Yao ◽

Yu‐Qing Zheng ◽

Jin‐Hu Dou ◽

Yang Lu ◽

Yi‐Fan Ding ◽

...

Keyword(s):

Crystal Structure ◽

Electron Mobility ◽

Conjugated Polymer ◽

High Electron ◽

High Electron Mobility ◽

Polymer Crystals

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A Fully Conjugated 3D Covalent Organic Framework Exhibiting Band‐like Transport with Ultra‐High Electron Mobility

Angewandte Chemie ◽

10.1002/ange.202100464 ◽

2021 ◽

Author(s):

Dapeng Cao ◽

Shitao Wang ◽

Ling Da ◽

Jinsong Hao ◽

Jin Li ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Covalent Organic Framework ◽

Organic Framework

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Improved small‐signal hybrid parameter‐extraction technique for AlGaN / GaN high electron mobility transistors

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22562 ◽

2021 ◽

Author(s):

Xuekun Du ◽

Mohamed Helaoui ◽

Jialin Cai ◽

Jun Liu ◽

Fadhel M. Ghannouchi

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Parameter Extraction ◽

Extraction Technique ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors

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GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106109 ◽

2021 ◽

Vol 135 ◽

pp. 106109

Author(s):

Debaleen Biswas ◽

Takuya Tsuboi ◽

Takashi Egawa

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Double Quantum ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Quantum Well ◽

Gate Structure ◽

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