Enhanced near-UV electroluminescence from p-GaN/i-Al2O3/n-ZnO heterojunction LEDs by optimizing the insulator thickness and introducing surface plasmons of Ag nanowires
2017 ◽
Vol 5
(13)
◽
pp. 3288-3295
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Enhanced near-UV electroluminescence is achieved from p-GaN/i-Al2O3/n-ZnO LEDs by optimizing the Al2O3 insulator thickness and introducing Ag nanowire surface plasmons.
2018 ◽
Vol 10
(18)
◽
pp. 15812-15819
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Keyword(s):
2018 ◽
Vol 6
(13)
◽
pp. 3334-3340
◽
Keyword(s):
2014 ◽
Vol 2
(21)
◽
pp. 4312-4319
◽
Keyword(s):
2007 ◽
Vol 129
(31)
◽
pp. 9576-9577
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