Reaction intermediate-induced vapor–liquid–solid growth of silicon oxide nanowires

CrystEngComm ◽  
2018 ◽  
Vol 20 (45) ◽  
pp. 7256-7265 ◽  
Author(s):  
Joseph J. Huson ◽  
Tao Sheng ◽  
Ezekiel Ogle ◽  
Haitao Zhang
Keyword(s):  
Silicon Oxide ◽  
New Method ◽  
Nanowire Growth ◽  
Vapor Liquid Solid ◽  
Oxide Nanowires ◽  
Reaction Intermediate ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Jellyfish-like SiOx nanowires were formed in a reaction intermediate-induced vapor–liquid–solid process, which provides a new method for nanowire growth.

Rational Concept for Designing Vapor–Liquid–Solid Growth of Single Crystalline Metal Oxide Nanowires

Nano Letters ◽  
2015 ◽  
Vol 15 (10) ◽  
pp. 6406-6412 ◽  
Author(s):  
Annop Klamchuen ◽  
Masaru Suzuki ◽  
Kazuki Nagashima ◽  
Hideto Yoshida ◽  
Masaki Kanai ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Vapor Liquid Solid ◽  
Single Crystalline ◽  
Oxide Nanowires ◽  
Metal Oxide Nanowires ◽  
Crystalline Metal ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

A flux induced crystal phase transition in the vapor–liquid–solid growth of indium-tin oxide nanowires

Nanoscale ◽  
2014 ◽  
Vol 6 (12) ◽  
pp. 7033 ◽  
Author(s):  
Gang Meng ◽  
Takeshi Yanagida ◽  
Hideto Yoshida ◽  
Kazuki Nagashima ◽  
Masaki Kanai ◽  
...  
Keyword(s):  
Phase Transition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Crystal Phase ◽  
Vapor Liquid Solid ◽  
Oxide Nanowires ◽  
Crystal Phase Transition ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

scholarly journals Лимитирующие режимы роста III-V нитевидных нанокристаллов

2020 ◽  
Vol 46 (17) ◽  
pp. 26
Author(s):  
В.Г. Дубровский ◽  
А.С. Соколовский ◽  
H. Hijazi
Keyword(s):  
Growth Rate ◽  
Generalized Equation ◽  
Nanowire Growth ◽  
Vapor Liquid Solid ◽  
Group V ◽  
Growth Environment ◽  
Group Iii ◽  
Deposition Surface ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Theoretical analysis is presented for vapor-liquid-solid growth of III-V nanowires in the presence of three competing processes of the group V deposition, surface diffusion of group III adatoms and nucleation of islands at the liquid-solid interface. A generalized equation for the nanowire growth rate is obtained which can be limited of one of the three processes depending on the growth environment. Different regimes of vapor-liquid-solid growth of III-V nanowires are analyzed depending on the group III and V influxes and nanowire radius.

scholarly journals Epitaxy-Enabled Vapor–Liquid–Solid Growth of Tin-Doped Indium Oxide Nanowires with Controlled Orientations

Nano Letters ◽  
2014 ◽  
Vol 14 (8) ◽  
pp. 4342-4351 ◽  
Author(s):  
Youde Shen ◽  
Stuart Turner ◽  
Ping Yang ◽  
Gustaaf Van Tendeloo ◽  
Oleg I. Lebedev ◽  
...  
Keyword(s):  
Indium Oxide ◽  
Vapor Liquid Solid ◽  
Oxide Nanowires ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Indium and tin oxide nanowires by vapor-liquid-solid growth technique

2006 ◽  
Vol 35 (2) ◽  
pp. 200-206 ◽  
Author(s):  
Pho Nguyen ◽  
Sreeram Vaddiraju ◽  
M. Meyyappan
Keyword(s):  
Tin Oxide ◽  
Vapor Liquid Solid ◽  
Growth Technique ◽  
Oxide Nanowires ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid
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