scholarly journals Metal-layer-assisted coalescence of Au nanoparticles and its effect on diameter control in vapor-liquid-solid growth of oxide nanowires

2011 ◽  
Vol 83 (4) ◽  
Author(s):  
Dong Lai Guo ◽  
Xiao Huang ◽  
Guo Zhong Xing ◽  
Zhou Zhang ◽  
Gong Ping Li ◽  
...  
CrystEngComm ◽  
2018 ◽  
Vol 20 (45) ◽  
pp. 7256-7265 ◽  
Author(s):  
Joseph J. Huson ◽  
Tao Sheng ◽  
Ezekiel Ogle ◽  
Haitao Zhang

Jellyfish-like SiOx nanowires were formed in a reaction intermediate-induced vapor–liquid–solid process, which provides a new method for nanowire growth.


Nano Letters ◽  
2015 ◽  
Vol 15 (10) ◽  
pp. 6406-6412 ◽  
Author(s):  
Annop Klamchuen ◽  
Masaru Suzuki ◽  
Kazuki Nagashima ◽  
Hideto Yoshida ◽  
Masaki Kanai ◽  
...  

2007 ◽  
Vol 1058 ◽  
Author(s):  
Mohanchand Paladugu ◽  
Jin Zou ◽  
Ya-Nan Guo ◽  
Graeme J. Auchterlonie ◽  
Hannah J. Joyce ◽  
...  

ABSTRACTTo observe the axial growth behavior of InAs on GaAs nanowires, InAs was grown for different growth durations on GaAs nanowires using Au nanoparticles. Through transmission electron microscopy, we have observed the following evolution steps for the InAs growth. (1) In the initial stages of the InAs growth, InAs cluster into a wedge shape preferentially at an edge of the Au/GaAs interface by minimizing Au/InAs interfacial area; (2) with further growth of InAs, the Au particles move sidewards and then downwards by preserving an interface with GaAs nanowire sidewalls. The lower interfacial energy of Au/GaAs than that of Au/InAs is attributed to be the reason for such Au movement. This downward movement of Au nanoparticle later terminates when the nanoparticle encounters InAs growing radially on the GaAs nanowire sidewalls, and with further supply of In and As vapor reactants, the Au nanoparticles assist the formation of InAs branches. These observations give some insights of vapor-liquid-solid growth and the kinks formation in nanowire heterostructures.


Nanoscale ◽  
2014 ◽  
Vol 6 (12) ◽  
pp. 7033 ◽  
Author(s):  
Gang Meng ◽  
Takeshi Yanagida ◽  
Hideto Yoshida ◽  
Kazuki Nagashima ◽  
Masaki Kanai ◽  
...  

Nano Letters ◽  
2014 ◽  
Vol 14 (8) ◽  
pp. 4342-4351 ◽  
Author(s):  
Youde Shen ◽  
Stuart Turner ◽  
Ping Yang ◽  
Gustaaf Van Tendeloo ◽  
Oleg I. Lebedev ◽  
...  

2006 ◽  
Vol 35 (2) ◽  
pp. 200-206 ◽  
Author(s):  
Pho Nguyen ◽  
Sreeram Vaddiraju ◽  
M. Meyyappan

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1681
Author(s):  
Hadi Hijazi ◽  
Vladimir G. Dubrovskii

The vapor–liquid–solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor–liquid–solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.


Sign in / Sign up

Export Citation Format

Share Document