Growth of high-quality GaN crystals on a BCN nanosheet-coated substrate by hydride vapor phase epitaxy

CrystEngComm ◽  
2019 ◽  
Vol 21 (8) ◽  
pp. 1302-1308 ◽  
Author(s):  
Baoguo Zhang ◽  
Yongzhong Wu ◽  
Lei Zhang ◽  
Qin Huo ◽  
Haixiao Hu ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Carbon Nitride ◽  
Vapor Phase Epitaxy ◽  
Coating Material ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Coated Substrate ◽  
Boron Carbon Nitride ◽  
Boron Carbon

In this study, boron carbon nitride (BCN) nanosheets were used as a substrate coating material to grow gallium nitride (GaN) crystals by hydride vapor phase epitaxy.

scholarly journals Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 141 ◽  
Author(s):  
Haixiao Hu ◽  
Baoguo Zhang ◽  
Lei Liu ◽  
Deqin Xu ◽  
Yongliang Shao ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Chemical Vapor ◽  
Growth Stress ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
High Quality ◽  
Continuous Growth

The progress of nitride technology is widely limited and hindered by the lack of high-quality gallium nitride (GaN) wafers. Therefore, a large number of GaN epitaxial devices are grown on heterogeneous substrates. Although various additional treatments of substrate have been used to promote crystal quality, there is still plenty of room for its improvement, in terms of direct and continuous growth based on the hydride vapor phase epitaxy (HVPE) technique. Here, we report a three-step process that can be used to enhance the quality of GaN crystal by tuning V/III rate during successive HVPE process. In the growth, a metal-organic chemical vapor deposition (MOCVD) grown GaN on sapphire (MOCVD-GaN/Al2O3) was employed as substrate, and a high-quality GaN polyporous interlayer, with successful acquisition, without any additional substrate treatment, caused the growth stress to decrease to 0.06 GPa. Meanwhile the quality of GaN improved, and the freestanding GaN was directly obtained during the growth process.

High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films

2014 ◽  
Vol 105 (19) ◽  
pp. 192104 ◽  
Author(s):  
J. C. Qian ◽  
S. K. Jha ◽  
B. Q. Wang ◽  
E. V. Jelenković ◽  
I. Bello ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Zno Nanorods ◽  
High Quality ◽  
Boron Carbon Nitride ◽  
Boron Carbon

Hydride vapor phase epitaxy for gallium nitride substrate

2019 ◽  
Vol 40 (10) ◽  
pp. 101801 ◽  
Author(s):  
Jun Hu ◽  
Hongyuan Wei ◽  
Shaoyan Yang ◽  
Chengming Li ◽  
Huijie Li ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Investigation of surface acoustic waves anisotropy on high-quality AlN/Sapphire grown by hydride vapor phase epitaxy

2019 ◽  
Vol 6 (9) ◽  
pp. 095903
Author(s):  
Wenxiu Dong ◽  
Xue Ji ◽  
Weifan Wang ◽  
Tengkun Li ◽  
Jun Huang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality

High-quality GaN crystals grown from double-polarity hydride vapor phase epitaxy and single-polarization regrowth

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1019
Author(s):  
Tatsuya Ezaki ◽  
Yusuke Shigefuji ◽  
Narihito Okada ◽  
Kazuyuki Tadatomo
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Single Polarization

High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

2006 ◽  
Vol 88 (24) ◽  
pp. 241914 ◽  
Author(s):  
D. Martin ◽  
J. Napierala ◽  
M. Ilegems ◽  
R. Butté ◽  
N. Grandjean
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Sapphire Substrates

A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 51 (1) ◽  
pp. 01AF05 ◽  
Author(s):  
Min Jeong Shin ◽  
Min Ji Kim ◽  
Hun Soo Jeon ◽  
Hyung Soo Ahn ◽  
Sam Nyung Yi ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

2010 ◽  
Vol 312 (24) ◽  
pp. 3569-3573 ◽  
Author(s):  
Yuichi Oshima ◽  
Takehiro Yoshida ◽  
Kazutoshi Watanabe ◽  
Tomoyoshi Mishima
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Bulk Gan

High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy

1998 ◽  
Vol 189-190 ◽  
pp. 61-66 ◽  
Author(s):  
C Sasaoka ◽  
H Sunakawa ◽  
A Kimura ◽  
M Nido ◽  
A Usui ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Low Dislocation Density

Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

2003 ◽  
Vol 83 (4) ◽  
pp. 644-646 ◽  
Author(s):  
B. A. Haskell ◽  
F. Wu ◽  
M. D. Craven ◽  
S. Matsuda ◽  
P. T. Fini ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Defect Reduction ◽  
Lateral Epitaxial Overgrowth
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