scholarly journals Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 141 ◽  
Author(s):  
Haixiao Hu ◽  
Baoguo Zhang ◽  
Lei Liu ◽  
Deqin Xu ◽  
Yongliang Shao ◽  
...  

The progress of nitride technology is widely limited and hindered by the lack of high-quality gallium nitride (GaN) wafers. Therefore, a large number of GaN epitaxial devices are grown on heterogeneous substrates. Although various additional treatments of substrate have been used to promote crystal quality, there is still plenty of room for its improvement, in terms of direct and continuous growth based on the hydride vapor phase epitaxy (HVPE) technique. Here, we report a three-step process that can be used to enhance the quality of GaN crystal by tuning V/III rate during successive HVPE process. In the growth, a metal-organic chemical vapor deposition (MOCVD) grown GaN on sapphire (MOCVD-GaN/Al2O3) was employed as substrate, and a high-quality GaN polyporous interlayer, with successful acquisition, without any additional substrate treatment, caused the growth stress to decrease to 0.06 GPa. Meanwhile the quality of GaN improved, and the freestanding GaN was directly obtained during the growth process.

CrystEngComm ◽  
2019 ◽  
Vol 21 (8) ◽  
pp. 1302-1308 ◽  
Author(s):  
Baoguo Zhang ◽  
Yongzhong Wu ◽  
Lei Zhang ◽  
Qin Huo ◽  
Haixiao Hu ◽  
...  

In this study, boron carbon nitride (BCN) nanosheets were used as a substrate coating material to grow gallium nitride (GaN) crystals by hydride vapor phase epitaxy.


MRS Bulletin ◽  
2009 ◽  
Vol 34 (5) ◽  
pp. 313-317 ◽  
Author(s):  
Kenji Fujito ◽  
Shuichi Kubo ◽  
Isao Fujimura

AbstractThe remarkable progress in nonpolar and semipolar devices based on gallium nitride (GaN) in recent years has been driven by not only advancements in the epitaxial growth technique but also improvements in the quality of bulk nonpolar and semipolar GaN substrates. At present, high-quality nonpolar/semipolar substrates are only made by slicing thick bulk GaN crystals grown by hydride vapor-phase epitaxy (HVPE). Although HVPE is currently the most successful method for obtaining high-quality bulk GaN crystals, it is still difficult to obtain uniform crystals with large diameters and thicknesses. The size of the nonpolar/semipolar substrates has been limited by the growth thickness along the c-axis of bulk GaN crystals. Here we review the growth of bulk GaN crystals by HVPE to achieve high-quality and large-sized nonpolar and semipolar substrates.


2019 ◽  
Vol 40 (10) ◽  
pp. 101801 ◽  
Author(s):  
Jun Hu ◽  
Hongyuan Wei ◽  
Shaoyan Yang ◽  
Chengming Li ◽  
Huijie Li ◽  
...  

2019 ◽  
Vol 6 (9) ◽  
pp. 095903
Author(s):  
Wenxiu Dong ◽  
Xue Ji ◽  
Weifan Wang ◽  
Tengkun Li ◽  
Jun Huang ◽  
...  

2006 ◽  
Vol 88 (24) ◽  
pp. 241914 ◽  
Author(s):  
D. Martin ◽  
J. Napierala ◽  
M. Ilegems ◽  
R. Butté ◽  
N. Grandjean

2012 ◽  
Vol 51 (1) ◽  
pp. 01AF05 ◽  
Author(s):  
Min Jeong Shin ◽  
Min Ji Kim ◽  
Hun Soo Jeon ◽  
Hyung Soo Ahn ◽  
Sam Nyung Yi ◽  
...  

2010 ◽  
Vol 312 (24) ◽  
pp. 3569-3573 ◽  
Author(s):  
Yuichi Oshima ◽  
Takehiro Yoshida ◽  
Kazutoshi Watanabe ◽  
Tomoyoshi Mishima

2003 ◽  
Vol 83 (4) ◽  
pp. 644-646 ◽  
Author(s):  
B. A. Haskell ◽  
F. Wu ◽  
M. D. Craven ◽  
S. Matsuda ◽  
P. T. Fini ◽  
...  

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