Electrooxidation of sulfate paired to electroreduction of copper for regeneration of persulfate/sulfuric acid etching solution

2018 ◽  
Vol 20 (20) ◽  
pp. 4710-4718 ◽  
Author(s):  
Mingming Zhou ◽  
Chaolin Li ◽  
Haijian Luo ◽  
Jingwen Wang ◽  
Xue Sun

A laboratory scale closed-loop cycle system for the complete regeneration of sodium persulfate/sulfuric acid etching solution (SPS) has been developed by anode oxidation of sulfate paired to cathode reduction of copper.

1980 ◽  
Vol 59 (3) ◽  
pp. 625-630 ◽  
Author(s):  
Yoshikazu Takahashi ◽  
Yukio Arakawa ◽  
Takashi Matsukubo ◽  
Mitsuharu Takeuchi

1978 ◽  
Vol 57 (4) ◽  
pp. 551-556 ◽  
Author(s):  
R.L. Bowen

Surface analysis by XPS (X-ray photoelectron spectroscopy), also called ESCA (electron spectroscopy for chemical analysis), indicates that only certain cations are appreciably sorbed by enamel from an acid etching solution containing phosphoric acid and equimolar concentrations of candidate mordant salts.


2018 ◽  
Vol 37 (3) ◽  
pp. 385-392 ◽  
Author(s):  
Pisaisit CHAIJAREENONT ◽  
Sasiprapha PRAKHAMSAI ◽  
Patcharawan SILTHAMPITAG ◽  
Hidekazu TAKAHASHI ◽  
Mansuang ARKSORNNUKIT

RSC Advances ◽  
2018 ◽  
Vol 8 (71) ◽  
pp. 41101-41108 ◽  
Author(s):  
Shuxian Wang ◽  
Chunlai Huang ◽  
Lei Wang ◽  
Wei Sun ◽  
Deren Yang

We added additives to the acid etching solution and prepared the silicon/carbon microtubes composites using a simple and fast method.


2013 ◽  
Vol 284-287 ◽  
pp. 334-341
Author(s):  
Chun Ming Chang ◽  
Ming Hua Shiao ◽  
Don Yau Chiang ◽  
Chin Tien Yang ◽  
Mao Jung Huang ◽  
...  

In this study, the combined technologies of dual-layer photoresist complimentary lithography (DPCL), inductively coupled plasma-reactive ion etching (ICP-RIE) and laser direct-write lithography (LDL) are applied to produce the submicron patterns on sapphire substrates. The inorganic photoresist has almost no resistance for chlorine containing plasma and aqueous acid etching solution. However, the organic photoresist has high resistance for chlorine containing plasma and aqueous acid etching solution. Moreover, the inorganic photoresist is less etched by oxygen plasma etching process. The organic and inorganic photoresists deposit sequentially into a composite photoresist on a substrate. The DPCL takes advantages of the complementary chemical properties of organic and inorganic photoresists. We fabricated two structures with platform and non-platform structure. The non-platform structure featured structural openings, the top and bottom diameters and the depth are approximately 780 nm, 500 nm and 233 nm, respectively. The platform structure featured structural openings, the top and bottom diameters and the depth are approximately 487 nm, 288 nm and 203 nm, respectively. The precision submicron or nanoscale patterns of large etched area and patterns with high aspect ratio can be quickly produced by this technique. This technology features a low cost but high yield production technology. It has the potential applications in fabrication of micro-/nanostructures and devices for the optoelectronic industry, semiconductor industry and energy industry.


2006 ◽  
Vol 309-311 ◽  
pp. 391-394
Author(s):  
A.W. Haryadi ◽  
Chang Kuk You ◽  
Shin Yoon Kim ◽  
Eui Kyun Park ◽  
Kyo Han Kim ◽  
...  

Grit blasting using bioactive HA and biodegradable CMP followed by acid etching has been done. HNO3 and H3PO4 were used for the etching solution by controlling the concentration and etching time to know the effect on the surface chemistry and morphology of the Ti implant. Characterization of samples was done by using SEM, EDX and surface profilometer. The contents of residues on Ti surface decreased with increasing acid concentration and etching time. It was observed that the acidic etching rate of HA grits on Ti surface was faster than that of CMP grits. And HNO3 etched more rapidly the HA and CMP grits on Ti surface, compared to H3PO4. Therefore, the surface roughness of dental implants can be controlled by having appropriate combination of acid concentration and etching time.


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