scholarly journals High-performance thin H:SiON OLED encapsulation layer deposited by PECVD at low temperature

RSC Advances ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 58-64 ◽  
Author(s):  
Kyoung Woo Park ◽  
Seunghee Lee ◽  
Hyunkoo Lee ◽  
Yong-Hwan Cho ◽  
Yong Cheon Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
High Performance ◽  
Single Layer ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Layer Thin Film

High-performance H:SiON single layer thin film encapsulation (TFE) was deposited by plasma enhanced chemical vapor deposition (PECVD) method. To control the characteristics of the SiON thin films, hydrogen gas was introduced during PECVD process.

scholarly journals Low temperature fabrication of thermochromic VO2 thin films by low-pressure chemical vapor deposition

RSC Advances ◽  
2017 ◽  
Vol 7 (18) ◽  
pp. 10798-10805 ◽  
Author(s):  
Beibei Guo ◽  
Lanli Chen ◽  
Siqi Shi ◽  
Ahmad Ishaq ◽  
Dongyun Wan ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
First Principles ◽  
High Performance ◽  
Chemical Vapor ◽  
First Principles Calculations ◽  
Pressure Chemical ◽  
Vo2 Thin Films

High-performance thermochromic VO2 films were fabricated by LPCVD, and the mechanism for their low transition temperatures was studied using first-principles calculations.

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

2007 ◽  
Vol 515 (5) ◽  
pp. 2921-2925 ◽  
Author(s):  
Chunyu Wang ◽  
Volker Cimalla ◽  
Genady Cherkashinin ◽  
Henry Romanus ◽  
Majdeddin Ali ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Indium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Growth of Antimony Thin Films Using Perbenzylated Organometallic Precursors

1998 ◽  
Vol 547 ◽  
Author(s):  
Michael P. Remington ◽  
Smuruthi Kamepalli ◽  
Philip Boudjouk ◽  
Bryan R. Jarabek ◽  
Dean G. Grier ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Carbon ◽  
Design Strategies ◽  
Glass Substrates ◽  
Pressure Chemical ◽  
Organometallic Precursors

AbstractThe low temperature (ca. 300°C) deposition of antimony films by low-pressure chemical vapor deposition (LPCVD) on glass substrates from tribenzylantimony, Bn3Sb, is described. The facile elimination of the benzyl ligands results in preferentially oriented antimony films with low carbon content. The pyrolysis, decomposition mechanism and precursor design strategies are discussed. In addition, the deposition of bismuth from tribenzylbismuth, Bn3Bi, is presented. The potential for alloy growth using these precursors is discussed. Resulting films were characterized by XRD, SEM, and AFM.

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