Novel two-dimensional semiconductor SnP3: high stability, tunable bandgaps and high carrier mobility explored using first-principles calculations

2018 ◽  
Vol 6 (25) ◽  
pp. 11890-11897 ◽  
Author(s):  
Songsong Sun ◽  
Fanchen Meng ◽  
Hongyan Wang ◽  
Hui Wang ◽  
Yuxiang Ni
Keyword(s):  
First Principles ◽  
Carrier Mobility ◽  
High Stability ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
2D Material ◽  
High Carrier Mobility ◽  
High Carrier

A novel semiconducting 2D material based on monolayer and bilayer SnP3 is proposed using first-principles calculations.

Penta-MX2 (M = Ni, Pd and Pt; X = P and As) monolayers: direct band-gap semiconductors with high carrier mobility

2019 ◽  
Vol 7 (12) ◽  
pp. 3569-3575 ◽  
Author(s):  
Shifeng Qian ◽  
Xiaowei Sheng ◽  
Xian Xu ◽  
Yuxiang Wu ◽  
Ning Lu ◽  
...  
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Ring Network ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier

Two-dimensional binary MX2 (M = Ni, Pd and Pt; X = P and As) exhibiting a beautiful pentagonal ring network is discussed through first principles calculations.

Prediction of high carrier mobility for a novel two-dimensional semiconductor of BC6N: first principles calculations

2020 ◽  
Vol 8 (17) ◽  
pp. 5882-5893 ◽  
Author(s):  
Li-Bin Shi ◽  
Mei Yang ◽  
Shuo Cao ◽  
Qi You ◽  
Ya-Jing Zhang ◽  
...  
Keyword(s):  
First Principles ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
High Carrier Mobility ◽  
High Carrier

First principles calculations are performed to predict phonon-limited carrier mobility for a novel graphene-like semiconductor with BC6N stoichiometry.

A novel two-dimensional δ-InP3 monolayer with high stability, tunable bandgap, high carrier mobility, and gas sensing of NO2

2019 ◽  
Vol 7 (24) ◽  
pp. 7352-7359 ◽  
Author(s):  
Wencai Yi ◽  
Xin Chen ◽  
Zhixiu Wang ◽  
Yingchun Ding ◽  
Bingchao Yang ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
High Stability ◽  
Gas Sensing ◽  
Two Dimensional ◽  
Tunable Bandgap ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Sensing Performance

δ-InP3 monolayer possesses high electronic mobility and worthwhile sensing performance toward N-based gases (particularly NO2).

Highly Tunable Electronic Structure and Linear Dichroism in 90° Twisted α-Phosphorus Carbide Bilayer: A First-Principles Calculation

2021 ◽  
Author(s):  
Weiwei Liu ◽  
Hongwei Bao ◽  
Yan Li ◽  
Fei Ma
Keyword(s):  
Electronic Structure ◽  
First Principles ◽  
Carrier Mobility ◽  
Electronic Devices ◽  
Linear Dichroism ◽  
First Principles Calculation ◽  
First Principles Calculations ◽  
Application Potential ◽  
High Carrier Mobility ◽  
High Carrier

α-phosphorus carbide (α-PC) shares similar puckered structure with black phosphorus and has a high carrier mobility, showing great application potential in the future nano-electronic devices. Based on first-principles calculations, we...

Recent advances in doping engineering of black phosphorus

2020 ◽  
Vol 8 (11) ◽  
pp. 5421-5441 ◽  
Author(s):  
Haiguo Hu ◽  
Zhe Shi ◽  
Karim Khan ◽  
Rui Cao ◽  
Weiyuan Liang ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Black Phosphorus ◽  
Two Dimensional ◽  
Anisotropic Structure ◽  
Direct Bandgap ◽  
2D Material ◽  
Recent Advances ◽  
In Doping ◽  
High Carrier Mobility ◽  
High Carrier

Black phosphorus (BP), as a typical layered two-dimensional (2D) material, has attracted tremendous attention due to its high carrier mobility, unique in-plane anisotropic structure and tunable direct bandgap.

A graphene-like Mg3N2monolayer: high stability, desirable direct band gap and promising carrier mobility

2016 ◽  
Vol 18 (44) ◽  
pp. 30379-30384 ◽  
Author(s):  
Peng-Fei Liu ◽  
Liujiang Zhou ◽  
Thomas Frauenheim ◽  
Li-Ming Wu
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
High Stability ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier

A novel two-dimensional material, g-Mg3N2, exhibits an intrinsic direct band gap of 1.86 eV, outstanding stability (2000 K) and a high carrier mobility of up to 103cm2V−1s−1which is larger than that of MoS2and close to that of few-layer phosphorene.

Auxetic, flexible, and strain-tunable two-dimensional th-AlN for photocatalytic visible light water splitting with anisotropic high carrier mobility

2021 ◽  
Vol 9 (14) ◽  
pp. 4971-4977
Author(s):  
Mehmet Emin Kilic ◽  
Kwang-Ryeol Lee
Keyword(s):  
Optical Properties ◽  
Visible Light ◽  
Water Splitting ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
Light Water ◽  
Photocatalytic Water Splitting ◽  
Electronic And Optical Properties ◽  
High Carrier Mobility ◽  
High Carrier

Tetrahexagonal AlN: a novel two-dimensional family for photocatalytic water splitting with exceptional mechanical, electronic, and optical properties.

Mechanical, electronic and optical properties of novel B2P6 monolayer: ultrahigh carrier mobility and strong optical absorption

2021 ◽  
Author(s):  
Kai Ren ◽  
Huabing Shu ◽  
Wenyi Huo ◽  
Zhen Cui ◽  
Jin Yu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Carrier Mobility ◽  
2D Materials ◽  
Two Dimensional ◽  
Electronic And Optical Properties ◽  
High Carrier Mobility ◽  
High Carrier

Two-dimensional (2D) materials with moderate bandgap and high carrier mobility are decent for the applications in the optoelectronics. In this work, we present a systematically investigation of the mechanical, electronic...

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