Highly Tunable Electronic Structure and Linear Dichroism in 90° Twisted α-Phosphorus Carbide Bilayer: A First-Principles Calculation

Author(s):  
Weiwei Liu ◽  
Hongwei Bao ◽  
Yan Li ◽  
Fei Ma

α-phosphorus carbide (α-PC) shares similar puckered structure with black phosphorus and has a high carrier mobility, showing great application potential in the future nano-electronic devices. Based on first-principles calculations, we...

2018 ◽  
Vol 6 (25) ◽  
pp. 11890-11897 ◽  
Author(s):  
Songsong Sun ◽  
Fanchen Meng ◽  
Hongyan Wang ◽  
Hui Wang ◽  
Yuxiang Ni

A novel semiconducting 2D material based on monolayer and bilayer SnP3 is proposed using first-principles calculations.


2019 ◽  
Vol 7 (12) ◽  
pp. 3569-3575 ◽  
Author(s):  
Shifeng Qian ◽  
Xiaowei Sheng ◽  
Xian Xu ◽  
Yuxiang Wu ◽  
Ning Lu ◽  
...  

Two-dimensional binary MX2 (M = Ni, Pd and Pt; X = P and As) exhibiting a beautiful pentagonal ring network is discussed through first principles calculations.


Author(s):  
Xiaoqin Shu ◽  
Jiahe Lin ◽  
Hong Zhang

Group IV and V monolayers are the promising state-of-the-art 2D materials owing to their high carrier mobility, tunable bandgaps, and optical linear dichroism along with outstanding electronic and thermoelectric properties....


2020 ◽  
Vol 8 (17) ◽  
pp. 5882-5893 ◽  
Author(s):  
Li-Bin Shi ◽  
Mei Yang ◽  
Shuo Cao ◽  
Qi You ◽  
Ya-Jing Zhang ◽  
...  

First principles calculations are performed to predict phonon-limited carrier mobility for a novel graphene-like semiconductor with BC6N stoichiometry.


2020 ◽  
Vol 22 (9) ◽  
pp. 5163-5169 ◽  
Author(s):  
Fu-Bao Zheng ◽  
Liang Zhang ◽  
Jin Zhang ◽  
Pei-ji Wang ◽  
Chang-Wen Zhang

Opening up a band gap without lowering high carrier mobility in germanene and finding suitable substrate materials to form van der Waals heterostructures have recently emerged as an intriguing way of designing a new type of electronic devices.


Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 411
Author(s):  
Jing Liu ◽  
Xiaorui Chen ◽  
Yuhong Huang ◽  
Hongkuan Yuan ◽  
Hong Chen

By employing the first-principles-based transport theory, we investigate the thermoelectric performance based on the structural and electronic properties of NiCl 3 monolayer. The NiCl 3 monolayer is confirmed to be a stable Dirac spin gapless semiconductor with the linear energy dispersion having almost massless carrier, high carrier mobility and fully spin-polarization. Further, NiCl 3 monolayer processes the optimum power factor of 4.97 mWm − 1 K − 2 , the lattice thermal conductivity of 1.89 Wm − 1 K − 1 , and the dimensionless figure of merit of 0.44 at room temperature under reasonable carrier concentration, indicating that NiCl 3 monolayer may be a potential matrix for promising thermoelectrics.


2017 ◽  
Vol 19 (31) ◽  
pp. 20677-20683 ◽  
Author(s):  
Aamir Shafique ◽  
Abdus Samad ◽  
Young-Han Shin

Using density functional theory, we systematically investigate the lattice thermal conductivity and carrier mobility of monolayer SnX2(X = S, Se).


2018 ◽  
Vol 13 (1) ◽  
Author(s):  
Shouyan Bai ◽  
Chun-Yao Niu ◽  
Weiyang Yu ◽  
Zhili Zhu ◽  
Xiaolin Cai ◽  
...  

2017 ◽  
Vol 5 (3) ◽  
pp. 627-633 ◽  
Author(s):  
N. Gao ◽  
G. Y. Lu ◽  
Z. Wen ◽  
Q. Jiang

The band gap in silicene is opened by the TTF adsorption and silicane substrate pairing, and the high carrier mobility is retained.


2014 ◽  
Vol 2014 ◽  
pp. 1-7
Author(s):  
Huey-Jiuan Lin ◽  
Hsuan-Chung Wu

First principles calculations were used to evaluate the electronic structure and optical properties of N/Si-monodoped and N/Si-codoped TiO2to further understand their photocatalytic mechanisms. In accordance with the atomic distance between N and Si dopants, this study considered three N/Si codoping configurations, in which the N dopant had a tendency to bond with the Si dopant. The calculations showed that the bandgaps of the N/Si codoping models were narrow, in the range 3.01–3.05 eV, redshifting the intrinsic absorption edge. The Si 3porbital of N/Si-codoped TiO2plays a key role in widening the valence band (VB), thereby increasing carrier mobility. In addition, the N-induced impurity energy level in the forbidden band appears in all three N/Si codoping models, strengthening absorption in the visible region. The bandgap narrowing, VB widening, and impurity energy levels in the forbidden band are beneficial for improving the photocatalytic activity of N/Si-codoped TiO2.


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