Fast grown self-assembled polythiophene/graphene oxide nanocomposite thin films at air–liquid interface with high mobility used in polymer thin film transistors

2018 ◽  
Vol 6 (37) ◽  
pp. 9981-9989 ◽  
Author(s):  
Nikhil Nikhil ◽  
Rajiv K. Pandey ◽  
Praveen Kumar Sahu ◽  
Manish Kumar Singh ◽  
Rajiv Prakash

Successful practical application of a polymer or its nanocomposite depends on the ability to produce a high performance electronic device at a significantly lesser cost and time than those needed to manufacture conventional devices.

Author(s):  
Wengao Pan ◽  
Xiaoliang Zhou ◽  
Qingping Lin ◽  
Jie Chen ◽  
Lei Lu ◽  
...  

Thin film transistors (TFT) with low cost, high mobility and low processing temperature are key enablers for practical application, which are always contradictory. In this work, we achieved high performance...


2018 ◽  
Vol 10 (25) ◽  
pp. 21492-21498 ◽  
Author(s):  
Satyaprasad P. Senanayak ◽  
Vinod K. Sangwan ◽  
Julian J. McMorrow ◽  
Ken Everaerts ◽  
Zhihua Chen ◽  
...  

2016 ◽  
Vol 4 (20) ◽  
pp. 4478-4484 ◽  
Author(s):  
Ao Liu ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Byoungchul Shin ◽  
Elvira Fortunato ◽  
...  

Eco-friendly IWO thin films are fabricated via a low-cost solution process and employed as channel layers in thin-film transistors.


2016 ◽  
Vol 4 (10) ◽  
pp. 2072-2078 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  

Facile patterning of chloride-based precursor films for low-temperature, high performance indium oxide thin-film transistors.


2004 ◽  
Vol 85 (15) ◽  
pp. 3283-3285 ◽  
Author(s):  
Joonhyung Park ◽  
S. Young Park ◽  
Sang-Oak Shim ◽  
Hyewon Kang ◽  
Hong H. Lee

1994 ◽  
Vol 336 ◽  
Author(s):  
Y. Chida ◽  
M. Kondo ◽  
G. Ganguly ◽  
A. Matsuda

ABSTRACTHigh electron Mobility (over 3 cm2/Vs) thin film transistors (TFTs) have been fabricated using a-Si:H on thermally oxidized crystalline Si substrate. The procedures for fabricating the high performance TFTs are presented and the possible reasons for the high mobility are discussed.


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