High performance single-crystalline organic field-effect transistors based on molecular-modified dibenzo[a,e]pentalenes derivatives

2020 ◽  
Vol 44 (40) ◽  
pp. 17552-17557
Author(s):  
Fan Yin ◽  
Long Wang ◽  
Xiankai Yang ◽  
Meihui Liu ◽  
Hua Geng ◽  
...  
Keyword(s):  
Molecular Structure ◽  
Charge Transport ◽  
Transport Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Single Crystalline

Modulating the charge transport properties realized by a controllable molecular structure resulted in different packing arrangements.

Solution-grown unidirectionally oriented crystalline thin films of a U-shaped thienoacene-based semiconductor for high-performance organic field-effect transistors

2017 ◽  
Vol 5 (24) ◽  
pp. 5872-5876 ◽  
Author(s):  
Tatsuya Mori ◽  
Tatsuya Oyama ◽  
Hideaki Komiyama ◽  
Takuma Yasuda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Charge Transport ◽  
Transport Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Transistors ◽  
Organic Field Effect Transistors ◽  
Lamellar Structures

Strategically dialkylated bis(benzo[4,5]thieno)[2,3-b:3′,2′-d]thiophene molecules having an overall U-shaped configuration can self-organize into bilayer lamellar structures, demonstrating high charge-transport properties in thin-film organic transistors.

Influence of Phenyl Perfluorination on Charge Transport Properties of Distyryl-Oligothiophenes in Organic Field-Effect Transistors

2008 ◽  
Vol 113 (4) ◽  
pp. 1567-1574 ◽  
Author(s):  
Christine Videlot-Ackermann ◽  
Hugues Brisset ◽  
Jian Zhang ◽  
Jorg Ackermann ◽  
Sébastien Nénon ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

Anisotropic Strain Effect on Electron Transport in C60 Organic Field Effect transistors

2013 ◽  
Vol 1501 ◽  
Author(s):  
Akash Nigam ◽  
Günther Schwabegger ◽  
Mujeeb Ullah ◽  
Rizwan Ahmed ◽  
Ivan I. Fishchuk ◽  
...  
Keyword(s):  
Electron Transport ◽  
Charge Transport ◽  
Field Effect ◽  
High Performance ◽  
Tensile Strain ◽  
Field Effect Transistors ◽  
Compressive Strain ◽  
Strain Effect ◽  
Wearable Electronics ◽  
Organic Field Effect Transistors

ABSTRACTMechanical flexibility is one of the key advantages of organic semiconducting films in applications such as wearable-electronics or flexible displays. The present study is aimed at gaining deeper insight into the effect of strain on charge transport properties of the organic semiconductor films. We have fabricated high performance C60 top gate organic field effect transistors (OFET) on flexible substrates and characterized the devices by curling the substrates in concave and convex manner, to apply varying values of compressive and tensile strain, respectively. Electron mobility is found to increase with compressive strain and decrease with tensile strain. The observed strain effect is found to be strongly anisotropic with respect to the direction of flow of current. This observation on mobility is quantified using an Extended Gaussian Disorder Model (EGDM) for the hopping charge transport. We suggest that the observed strain dependence of the electron transport is dominated by a change in the effective charge hopping distance over the grain boundaries in polycrystalline C60 films.

Fabrication of flexible high-performance organic field-effect transistors using phenacene molecules and their application toward flexible CMOS inverters

2019 ◽  
Vol 7 (20) ◽  
pp. 6022-6033 ◽  
Author(s):  
Emanuela Pompei ◽  
Claudio Turchetti ◽  
Shino Hamao ◽  
Akari Miura ◽  
Hidenori Goto ◽  
...  
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Plastic Substrates

The transport properties of 3,10-ditetradecylpicene ((C14H29)2-picene) and [6]phenacene thin-film field-effect transistors (FETs) on Si and plastic substrates are reported, in which SiO2 and parylene are used as gate dielectrics, respectively.

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