Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates

We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO2 film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters.

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Low temperature cross-linked, high performance polymer gate dielectrics for solution-processed organic field-effect transistors

Polymer Chemistry ◽

10.1039/c5py00757g ◽

2015 ◽

Vol 6 (32) ◽

pp. 5884-5890 ◽

Cited By ~ 18

Author(s):

Shengxia Li ◽

Linrun Feng ◽

Jiaqing Zhao ◽

Xiaojun Guo ◽

Qing Zhang

Keyword(s):

Low Temperature ◽

Field Effect ◽

High Performance ◽

Gate Dielectric ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Cross Linking ◽

Organic Field Effect Transistors ◽

Solution Processed ◽

High Performance Polymer

Thermal cross-linking the bi-functional polymer thin-films at low temperature for gate dielectric application in solution processed organic field-effect transistors.

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High Performance Flexible Organic Field-Effect Transistors with Barium Strontium Titanate Gate Dielectric Deposited at Room Temperature

ACS Applied Electronic Materials ◽

10.1021/acsaelm.9b00779 ◽

2020 ◽

Vol 2 (2) ◽

pp. 529-536

Author(s):

Vivek Raghuwanshi ◽

Deepak Bharti ◽

Ajay Kumar Mahato ◽

Amit Kumar Shringi ◽

Ishan Varun ◽

...

Keyword(s):

Strontium Titanate ◽

Barium Strontium Titanate ◽

Field Effect ◽

High Performance ◽

Room Temperature ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Barium Strontium

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Direct Patterning of Self-Assembled Monolayers by Stamp Printing Method and Applications in High Performance Organic Field-Effect Transistors and Complementary Inverters

Advanced Functional Materials ◽

10.1002/adfm.201503245 ◽

2015 ◽

Vol 25 (38) ◽

pp. 6112-6121 ◽

Cited By ~ 28

Author(s):

Zhichao Zhang ◽

Xiaochen Ren ◽

Boyu Peng ◽

Zongrong Wang ◽

Xinyu Wang ◽

...

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Self Assembled Monolayers ◽

Organic Field Effect Transistors ◽

Direct Patterning ◽

Assembled Monolayers ◽

Complementary Inverters ◽

Self Assembled ◽

Printing Method

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Stable complementary inverters with organic field-effect transistors on Cytop fluoropolymer gate dielectric

Applied Physics Letters ◽

10.1063/1.3077192 ◽

2009 ◽

Vol 94 (5) ◽

pp. 053303 ◽

Cited By ~ 65

Author(s):

M. P. Walser ◽

W. L. Kalb ◽

T. Mathis ◽

T. J. Brenner ◽

B. Batlogg

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Complementary Inverters

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Fabrication and Characterization of Directly-Assembled ZnO Nanowire Field Effect Transistors with Polymer Gate Dielectrics

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2007.18085 ◽

2007 ◽

Vol 7 (11) ◽

pp. 4101-4105

Author(s):

Ahnsook Yoon ◽

Woong-Ki Hong ◽

Takhee Lee

Keyword(s):

Dielectric Layer ◽

Field Effect ◽

Gate Dielectric ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Electrical Characterization ◽

Electrical Characteristics ◽

Zno Nanowire ◽

Device Structure

We report the fabrication and electrical characterization of ZnO nanowire field effect transistors (FETs). Dielectrophoresis technique was used to directly align ZnO nanowires between lithographically prepatterned source and drain electrodes, and spin-coated polyvinylphenol (PVP) polymer thin layer was used as a gate dielectric layer in "top-gate" FET device configuration. The electrical characteristics of the top-gate ZnO nanowire FETs were found to be comparable to the conventional "bottom-gate" nanowire FETs with a SiO2 gate dielectric layer, suggesting the directly-assembled nanowire FET with a polymer gate dielectric layer is a useful device structure of nanowire FETs.

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Parylene based bilayer flexible gate dielectric layer for top-gated organic field-effect transistors

Organic Electronics ◽

10.1016/j.orgel.2017.04.005 ◽

2017 ◽

Vol 46 ◽

pp. 14-21 ◽

Cited By ~ 15

Author(s):

Eul-Yong Shin ◽

Eun-Young Choi ◽

Yong-Young Noh

Keyword(s):

Dielectric Layer ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Organic Field Effect Transistors

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Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors

Applied Sciences ◽

10.3390/app9010002 ◽

2018 ◽

Vol 9 (1) ◽

pp. 2 ◽

Cited By ~ 2

Author(s):

Sooji Nam ◽

Yong Jeong ◽

Joo Kim ◽

Hansol Yang ◽

Jaeyoung Jang

Keyword(s):

Graphene Oxide ◽

Field Effect ◽

High Performance ◽

Gate Dielectric ◽

Low Voltage ◽

Field Effect Transistors ◽

High Mobility ◽

Operating Voltage ◽

Organic Field Effect Transistors ◽

Gate Leakage

Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm−2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V−1 s−1 within a low operating voltage of −5 V.

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