Tunable electronic and optical properties of the WS2/IGZO heterostructure via an external electric field and strain: a theoretical study

2019 ◽  
Vol 21 (27) ◽  
pp. 14713-14721 ◽  
Author(s):  
Hongyu Tang ◽  
Chunjian Tan ◽  
Huiru Yang ◽  
Kai Zheng ◽  
Yutao Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
Visible Light ◽  
External Electric Field ◽  
Theoretical Study ◽  
Uv Light ◽  
Mechanical Strain ◽  
Electronic And Optical Properties

The external mechanical strain can efficiently modulate the photoresponse of the WS2/IGZO heterostructure to the UV light and the visible light.

scholarly journals Tunable electronic and optical properties of a BAs/As heterostructure by vertical strain and external electric field

RSC Advances ◽  
2021 ◽  
Vol 11 (35) ◽  
pp. 21824-21831
Author(s):  
X. Q. Deng ◽  
R. Q. Sheng ◽  
Q. Jing
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
External Electric Field ◽  
Photogenerated Electron ◽  
Electron Hole ◽  
Electronic And Optical Properties ◽  
Vertical Strain

The CBM (VBM) of the heterostructure is mainly contributed by the BAs (arsenene), which will favor the separation of photogenerated electron–hole pairs.

scholarly journals Study on Electronic and Optical Properties of Graphene Oxide Under an External Electric Field From First-principles

2021 ◽  
Author(s):  
Abdehafid Najim ◽  
Omar BAJJOU ◽  
Mustapha BOULGHALLAT ◽  
Mohammed Khenfouch ◽  
Khalid Rahmani
Keyword(s):  
Optical Properties ◽  
Graphene Oxide ◽  
Electric Field ◽  
Band Gap ◽  
External Electric Field ◽  
Density Of States ◽  
Density Functional ◽  
Partial Density ◽  
Total Density ◽  
Electronic And Optical Properties

Abstract Electronic and optical properties of graphene oxide (GO), under an external electric field (Eext) applied in three directions of space (x, y, z), are investigated using the density functional theory (DFT). The application of the Eext, causes a significant modifications to the electronic and optical properties of GO material. It has change the band gap, total density of states (TDOS), partial density of states (PDOS), absorption coefficient (α), dielectric function, optical conductivity, refractive index and loss function. The band gap of GO layer increases under the effects of the Eext, applied in x and y directions. On the other hand, for z direction, the band gap decreases by the effects of the Eext. The peaks of the TDOS around the Fermi level, change by the Eext applied in (x, y, z) directions. The α peaks of the GO sheet, decreases by the Eext applied in x direction, and increases if Eext applied in y and z directions. It is found that, the electronic and optical properties of GO layer, could be affected by the effects of the Eext and by its direction of application.

Electronic and optical properties tuned by strain and external electric field of g-ZnO/2H-TiS2 van der Waals heterostructures

Vacuum ◽  
2020 ◽  
Vol 174 ◽  
pp. 109232 ◽  
Author(s):  
Xinfeng Chen ◽  
Haohao Sheng ◽  
Jianli Wang ◽  
Gang Tang ◽  
Junting Zhang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
External Electric Field ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Electronic And Optical Properties

An AlAs/germanene heterostructure with tunable electronic and optical properties via external electric field and strain

2016 ◽  
Vol 4 (35) ◽  
pp. 8171-8178 ◽  
Author(s):  
Chunjian Tan ◽  
Qun Yang ◽  
Ruishen Meng ◽  
Qiuhua Liang ◽  
Junke Jiang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
External Electric Field ◽  
First Principles ◽  
First Principles Calculations ◽  
Electronic And Optical Properties ◽  
The Stability

By means of comprehensive first-principles calculations, we investigate the stability, electronic and optical properties of an AlAs/germanene heterostructure.

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