Significant reduction in the optical band-gap and defect assisted magnetic response in Fe-doped anatase TiO2 nanocrystals as dilute magnetic semiconductors

2019 ◽  
Vol 43 (15) ◽  
pp. 6048-6062 ◽  
Author(s):  
V. R. Akshay ◽  
B. Arun ◽  
Guruprasad Mandal ◽  
Anupama Chanda ◽  
M. Vasundhara
Keyword(s):  
Band Gap ◽  
Optical Band Gap ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Magnetic Behavior ◽  
Anatase Tio2 ◽  
Magnetic Response ◽  
Tio2 Nanocrystals

The nature of BMPs, whether overlapped or isolated, determines the magnetic behavior of Fe-doped TiO2.

Observation of Optical Band-Gap Narrowing and Enhanced Magnetic Moment in Co-Doped Sol–Gel-Derived Anatase TiO2 Nanocrystals

2018 ◽  
Vol 122 (46) ◽  
pp. 26592-26604 ◽  
Author(s):  
V. R. Akshay ◽  
B. Arun ◽  
Guruprasad Mandal ◽  
Geeta R. Mutta ◽  
Anupama Chanda ◽  
...  
Keyword(s):  
Band Gap ◽  
Magnetic Moment ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Anatase Tio2 ◽  
Tio2 Nanocrystals ◽  
Band Gap Narrowing ◽  
Co Doped

Impact of Mn-dopant concentration in observing narrowing of band-gap, urbach tail and paramagnetism in anatase TiO2 nanocrystals

2019 ◽  
Vol 43 (37) ◽  
pp. 14786-14799 ◽  
Author(s):  
V. R. Akshay ◽  
B. Arun ◽  
Guruprasad Mandal ◽  
M. Vasundhara
Keyword(s):  
Band Gap ◽  
Dilute Magnetic Semiconductor ◽  
Dopant Concentration ◽  
Magnetic Semiconductor ◽  
Anatase Tio2 ◽  
Potential Candidate ◽  
Tio2 Nanocrystals ◽  
Urbach Tail ◽  
Mn Doped ◽  
Mn Dopant

In addition to the numerous applications of Mn-doped TiO2, it could be a potential candidate as a dilute magnetic semiconductor.

scholarly journals Defect mediated mechanism in undoped, Cu and Zn-doped TiO2 nanocrystals for tailoring the band gap and magnetic properties

RSC Advances ◽  
2018 ◽  
Vol 8 (73) ◽  
pp. 41994-42008 ◽  
Author(s):  
V. R. Akshay ◽  
B. Arun ◽  
Shubhra Dash ◽  
Ajit K. Patra ◽  
Guruprasad Mandal ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Band Gap ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Magnetic Behavior ◽  
Semiconductor Materials ◽  
Magnetic Element ◽  
Tio2 Nanocrystals ◽  
Doped Tio2 ◽  
Cu And Zn

Oxide based dilute magnetic semiconductor materials are of great interest and this study focusses on the optical and magnetic behavior of non-magnetic element doped TiO2 nanocrystals which provides a significant reduction in bandgap with enhanced magnetization.

Anomalous optical and magnetic behavior of multi-phase Mn doped Zn2SiO4 nanowires: a new class of dilute magnetic semiconductors

Nanoscale ◽  
2014 ◽  
Vol 6 (24) ◽  
pp. 14845-14855 ◽  
Author(s):  
Muhammad Hafeez ◽  
Awais Ali ◽  
Sadia Manzoor ◽  
Arshad S. Bhatti
Keyword(s):  
Magnetic Properties ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Magnetic Behavior ◽  
New Class ◽  
Optical And Magnetic Properties ◽  
Multi Phase ◽  
Mn Doped

We present the synthesis of Mn doped Zn2SiO4 dense nanowire bundles using the VLS mode of growth with unusual optical and magnetic properties.

Epitaxial Growth of Dilute Magnetic Semiconductors: GaMnN and GaMnP

2001 ◽  
Vol 674 ◽  
Author(s):  
Mark E. Overberg ◽  
Cammy R. Abernathy ◽  
Stephen J. Pearton ◽  
Fred Sharifi ◽  
Arthur F. Hebard ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Elevated Temperatures ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Chemical Vapor ◽  
Magnetic Behavior ◽  
Organic Chemical ◽  
Preferential Formation ◽  
Metal Organic ◽  
Second Phases

ABSTRACTEpitaxial growth of the dilute magnetic semiconductors GaMnP and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP films grown with < 4.5% Mn show the preferential formation of the second phases MnP and Mn5.64P3, resulting in only a slight deviation from purely diamagnetic behavior. GaMnN films grown on both Al2O3 and Metal-Organic Chemical Vapor Deposition (MOCVD) derived GaN surfaces show strong ferromagnetism when grown with either C codoping or at elevated temperatures to raise the concentration of n-type carriers. Comparable GaMnN films grown under conditions which produce highly resistive material show only paramagnetism, indicating the importance of carrier concentration on the resulting magnetic behavior. The formation of second phases was not observed in the GaMnN material for Mn concentrations less than 9%.

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

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