Green engineering of optical band gap in plasmonic silver quantum dots using allium cepa extract

2021 ◽  
Author(s):  
S. Sankar ◽  
S. Navaneeth ◽  
Nibu George Abtaham
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Allium Cepa ◽  
Optical Band Gap ◽  
Green Engineering

Quantum dots in photocatalytic applications: efficiently enhancing visible light photocatalytic activity by integrating CdO quantum dots as sensitizers

2017 ◽  
Vol 19 (36) ◽  
pp. 24915-24927 ◽  
Author(s):  
A. H. Reshak
Keyword(s):  
Quantum Dots ◽  
Photocatalytic Activity ◽  
Visible Light ◽  
Band Gap ◽  
Visible Light Irradiation ◽  
Photocatalytic Performance ◽  
Optical Band Gap ◽  
Visible Light Active ◽  
Photocatalytic Applications ◽  
Visible Light Photocatalytic

The amalgamation of a wide optical band gap photocatalyst with visible-light-active CdO quantum dots (QDs) as sensitizers is one of the most efficient ways to improve photocatalytic performance under visible light irradiation.

The Role of Reduced Graphene Oxide Concentration as Ablated Material on Optical Properties of Graphene Quantum Dots

2019 ◽  
Vol 948 ◽  
pp. 267-273 ◽  
Author(s):  
Fiqhri Heda Murdaka ◽  
Ahmad Kusumaatmaja ◽  
Isnaeni ◽  
Iman Santoso
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Graphene Oxide ◽  
Band Gap ◽  
Reduced Graphene Oxide ◽  
Optical Band Gap ◽  
Graphene Quantum Dots ◽  
Absorption Peak ◽  
Oxygen Defect ◽  
Reduced Graphene

We report the synthesize of Graphene Quantum Dots (GQDs) using ablation method with reduced Graphene Oxide (rGO) solution as a starting material. We have varied the concentration of rGO as following: 0.5, 2, 5 mg/ml and then have ablated them using 800 nm Ti-Sapphire femtosecond laser to obtain GQDs. From the UV-Vis data, we observed that the more concentration of rGO is being ablated, the more secondary absorption peak at 255.1 nm appeared. This secondary absorption peak is a characteristic of n-π* bonding due to the presence of oxygen defect which occurs as a result of the interaction between the laser and the water in rGO solution. We conclude that the population of oxigen defect in GQDs is increasing, following the increase of rGO concentration and could alter the optical properties of GQD. On the other hand, using Tauc’s plot, we confirm that the increase of rGO concentration as the ablated material does not alter GQDs optical band gap. However, it will slightly reduce both, direct and indirect Oxygen defect related optical band gap.

Band Gap Modulation of Lead Sulfide QDs

NANO ◽  
2018 ◽  
Vol 13 (06) ◽  
pp. 1850060 ◽  
Author(s):  
Pengyu Zeng ◽  
Wei Li ◽  
Yun Zhao ◽  
Mengting Liu
Keyword(s):  
Quantum Dots ◽  
Particle Size ◽  
Optical Properties ◽  
Band Gap ◽  
Lead Sulfide ◽  
Optical Band Gap ◽  
Phase Method ◽  
Liquid Phase Method ◽  
Lead Sulfide Quantum Dots ◽  
Band Gap Modulation

Lead sulfide quantum dots (QDs) were prepared by liquid phase method. The particle size can be controlled by changing the concentration of reactants and surfactant and the size of the QDs varies from 7[Formula: see text]nm to 20[Formula: see text]nm, which results in the change of the optical properties and the band gap of the particles. The optical band gap of lead sulfide QDs increased drastically with the decrease of the diameter of the sample QDs.

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

scholarly journals Polymer Thermal Treatment Production of Cerium Doped Willemite Nanoparticles: An Analysis of Structure, Energy Band Gap and Luminescence Properties

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1118
Author(s):  
Ibrahim Mustapha Alibe ◽  
Khamirul Amin Matori ◽  
Mohd Hafiz Mohd Zaid ◽  
Salisu Nasir ◽  
Ali Mustapha Alibe ◽  
...  
Keyword(s):  
Solid State ◽  
Thermal Treatment ◽  
Band Gap ◽  
Optical Band Gap ◽  
Dopant Concentration ◽  
Blue Emission ◽  
Green Emission ◽  
Band Gap Energy ◽  
Solid State Lighting ◽  
Gap Energy

The contemporary market needs for enhanced solid–state lighting devices has led to an increased demand for the production of willemite based phosphors using low-cost techniques. In this study, Ce3+ doped willemite nanoparticles were fabricated using polymer thermal treatment method. The special effects of the calcination temperatures and the dopant concentration on the structural and optical properties of the material were thoroughly studied. The XRD analysis of the samples treated at 900 °C revealed the development and or materialization of the willemite phase. The increase in the dopant concentration causes an expansion of the lattice owing to the replacement of larger Ce3+ ions for smaller Zn2+ ions. Based on the FESEM and TEM micrographs, the nanoparticles size increases with the increase in the cerium ions. The mean particles sizes were estimated to be 23.61 nm at 1 mol% to 34.02 nm at 5 mol% of the cerium dopant. The optical band gap energy of the doped samples formed at 900 °C decreased precisely by 0.21 eV (i.e., 5.21 to 5.00 eV). The PL analysis of the doped samples exhibits a strong emission at 400 nm which is ascribed to the transition of an electron from localized Ce2f state to the valence band of O2p. The energy level of the Ce3+ ions affects the willemite crystal lattice, thus causing a decrease in the intensity of the green emission at 530 nm and the blue emission at 485 nm. The wide optical band gap energy of the willemite produced is expected to pave the way for exciting innovations in solid–state lighting applications.

scholarly journals Resonance and antiresonance in Raman scattering in GaSe and InSe crystals

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Osiekowicz ◽  
D. Staszczuk ◽  
K. Olkowska-Pucko ◽  
Ł. Kipczak ◽  
M. Grzeszczyk ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Temperature Effect ◽  
Band Gap ◽  
Raman Spectra ◽  
Quantum Interference ◽  
Optical Band Gap ◽  
Phonon Coupling ◽  
Phonon Modes ◽  
Electron Phonon Coupling ◽  
Resonant Raman

AbstractThe temperature effect on the Raman scattering efficiency is investigated in $$\varepsilon$$ ε -GaSe and $$\gamma$$ γ -InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the so-called B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone.

scholarly journals Encapsulated Passivation of Perovskite Quantum Dot (CsPbBr3) Using a Hot-Melt Adhesive (EVA-TPR) for Enhanced Optical Stability and Efficiency

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 419
Author(s):  
Saradh Prasad ◽  
Mamduh J. Aljaafreh ◽  
Mohamad S. AlSalhi ◽  
Abeer Alshammari
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Surface Defects ◽  
Optoelectronic Devices ◽  
Ethylene Vinyl Acetate ◽  
Light Emitting ◽  
Optical Stability ◽  
Perovskite Quantum Dots ◽  
Polymer Light Emitting Diodes ◽  
Hot Melt

The notable photophysical characteristics of perovskite quantum dots (PQDs) (CsPbBr3) are suitable for optoelectronic devices. However, the performance of PQDs is unstable because of their surface defects. One way to address the instability is to passivate PQDs using different organic (polymers, oligomers, and dendrimers) or inorganic (ZnS, PbS) materials. In this study, we performed steady-state spectroscopic investigations to measure the photoluminescence (PL), absorption (A), transmission (T), and reflectance (R) of perovskite quantum dots (CsPbBr3) and ethylene vinyl acetate/terpene phenol (1%) (EVA-TPR (1%), or EVA) copolymer/perovskite composites in thin films with a thickness of 352 ± 5 nm. EVA is highly transparent because of its large band gap; furthermore, it is inexpensive and easy to process. However, the compatibility between PQDs and EVA should be established; therefore, a series of analyses was performed to compute parameters, such as the band gap, the coefficients of absorbance and extinction, the index of refractivity, and the dielectric constant (real and imaginary parts), from the data obtained from the above investigation. Finally, the optical conductivities of the films were studied. All these analyses showed that the EVA/PQDs were more efficient and stable both physically and optically. Hence, EVA/PQDs could become copolymer/perovskite active materials suitable for optoelectronic devices, such as solar cells and perovskite/polymer light-emitting diodes (PPLEDs).

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