Enhanced thermoelectric properties of SnSe thin films grown by single-target magnetron sputtering

2019 ◽  
Vol 7 (30) ◽  
pp. 17981-17986 ◽  
Author(s):  
Lirong Song ◽  
Jiawei Zhang ◽  
Bo Brummerstedt Iversen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties ◽  
Bulk Material ◽  
Thermoelectric Performance ◽  
Single Target ◽  
Snse Thin Film

SnSe thin films were successfully grown using single-target magnetron sputtering. The SnSe thin film annealed at 700 K exhibits superior thermoelectric performance compared with previously reported SnSe films and polycrystalline SnSe bulk material.

scholarly journals Thermoelectric Properties of Cu2Se Nano-Thin Film by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 2075
Author(s):  
Liangliang Yang ◽  
Jiangtao Wei ◽  
Yuanhao Qin ◽  
Lei Wei ◽  
Peishuai Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Large Scale ◽  
Absolute Temperature ◽  
Thermoelectric Performance ◽  
Tem Analysis ◽  
Performance Factor

Thermoelectric technology can achieve mutual conversion between thermoelectricity and has the unique advantages of quiet operation, zero emissions and long life, all of which can help overcome the energy crisis. However, the large-scale application of thermoelectric technology is limited by its lower thermoelectric performance factor (ZT). The thermoelectric performance factor is a function of the Seebeck coefficient, electrical conductivity, thermal conductivity and absolute temperature. Since these parameters are interdependent, increasing the ZT value has always been a challenge. Here, we report the growth of Cu2Se thin films with a thickness of around 100 nm by magnetron sputtering. XRD and TEM analysis shows that the film is low-temperature α-Cu2Se, XPS analysis shows that about 10% of the film’s surface is oxidized, and the ratio of copper to selenium is 2.26:1. In the range of 300–400 K, the maximum conductivity of the film is 4.55 × 105 S m−1, which is the maximum value reached by the current Cu2Se film. The corresponding Seebeck coefficient is between 15 and 30 µV K−1, and the maximum ZT value is 0.073. This work systematically studies the characterization of thin films and the measurement of thermoelectric properties and lays the foundation for further research on nano-thin-film thermoelectrics.

Evolution of nanostructured single-phase CoSb3 thin films by low-energy ion beam induced mixing and their thermoelectric performance

2017 ◽  
Vol 19 (36) ◽  
pp. 24886-24895 ◽  
Author(s):  
Manju Bala ◽  
Srashti Gupta ◽  
Sanjeev K. Srivastava ◽  
Sankarakumar Amrithapandian ◽  
Tripurari S. Tripathi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermoelectric Properties ◽  
Single Phase ◽  
Ion Beam ◽  
Low Energy ◽  
Thermoelectric Performance

We report that a nanostructured CoSb3 thin film in a single phase can be synthesized by ion beam processing of Co/Sb bilayer thin films with better thermoelectric properties.

Synthesis of Nanocomposite thin film Ti/Al Multilayers and Ti-Aluminides

1996 ◽  
Vol 457 ◽  
Author(s):  
R. Banerjee ◽  
X. D. Zhang ◽  
S. A. Dregia ◽  
H. L. Fraser
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Thermodynamic Model ◽  
Interfacial Reactions ◽  
Experimental Results ◽  
Structural Transitions ◽  
Nanocomposite Thin Film ◽  
Multilayered Thin Films

ABSTRACTNanocomposite Ti/Al multilayered thin films have been deposited by magnetron sputtering. These multilayers exhibit interesting structural transitions on reducing the layer thickness of both Ti and Al. Ti transforms from its bulk stable hep structure to fee and Al transforms from fee to hep. The effect of ratio of Ti layer thickness to Al layer thickness on the structural transitions has been investigated for a constant bilayer periodicity of 10 nm by considering three different multilayers: 7.5 nm Ti / 2.5 nm Al, 5 nm Ti / 5 nm Al and 2.5 nm Ti / 7.5 nm Al. The experimental results have been qualitatively explained on the basis of a thermodynamic model. Preliminary experimental results of interfacial reactions in Ti/Al bilayers resulting in the formation of Ti-aluminides are also presented in the paper.

High Performance Metal Surface Coating Using Ta2O5 Thin Film Prepared by D.C. Magnetron Sputtering

2014 ◽  
Vol 979 ◽  
pp. 240-243
Author(s):  
Narathon Khemasiri ◽  
Chanunthorn Chananonnawathorn ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Pongpan Chindaudom ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Metal Surface ◽  
High Performance ◽  
Grazing Incidence ◽  
Surface Finishing ◽  
Afm Micrographs ◽  
Protective Performance

Tantalum oxide (Ta2O5) thin films were deposited as the protective layers for the metal surface finishing by the DC reactive magnetron sputtering system. The effect of the Ta2O5 film thickness, ranging from 25 nm to 200 nm, on the physical properties and the anti-corrosive performance were investigated. The grazing-incidence X-ray diffraction (GIXRD) and the atomic force microscopy (AFM) were used to examine the crystal structures and the surface topologies of the prepared films, respectively. The XRD results showed that the Ta2O5 thin films were all amorphous. The AFM micrographs demonstrated the film morphology with quite smooth surface features. The surface roughness tended to be rough when the film thickness was increased. To examine the protective performance of the films, the poteniostat and galvanometer was utilized to examine the electrochemical activities with the 1M NaCl as the corrosive electrolyte. The results from the I-V polarization curves (Tafel slope) indicated that, with the Ta2O5 thin film, the current density was significantly reduced by 3 orders of magnitude when compared with the blank sample. Such results were observed because of fully encapsulated surface of the samples were covered with the sputtered Ta2O5 thin films. The study also showed that the Ta2O5 thin film deposited at 50 nm yielded the most extreme protective performance. The Ta2O5 thin films therefore could be optimized for the smallest film thickness for highly potential role in the protective performance of the metal surface finishing products.

Study on preparing PLT(28) thin film and its electro-optic effect

1998 ◽  
Vol 13 (5) ◽  
pp. 1266-1270 ◽  
Author(s):  
Ai-Li Ding ◽  
Wei-Gen Luo ◽  
P. S. Qiu ◽  
J. W. Feng ◽  
R. T. Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Faraday Effect ◽  
The Other ◽  
Ceramic Powders ◽  
Glass Substrates ◽  
Annealing Conditions ◽  
Electro Optic

PLT(28) thin films deposited on glass substrates were studied by two sputtering processes. One is an in situ magnetron sputtering and the other is a low-temperature magnetron sputtering. The sintered PLT ceramic powders are used as a sputtering target for both processes. The influences of sputtering and annealing conditions on structure and crystallinity of the films were investigated. The electro-optic (E-O) properties of PLT(28) thin films prepared by the two processes were determined by a technique according to Faraday effect. The researches showed the E-O properties were strongly affected by the sputtering process. The film with larger grains exhibits stronger E-O effect. The quadratic E-O coefficient of PLT(28) thin film varies in the range of 0.1 × 10−16 to 1.0 × 10−16 (m/v)2.

PROPERTIES OF ALL-SOLID-STATE LITHIUM-ION RECHARGEABLE BATTERIES DEPOSITED BY RF MAGNETRON SPUTTERING

2013 ◽  
Vol 27 (22) ◽  
pp. 1350156 ◽  
Author(s):  
R. J. ZHU ◽  
Y. REN ◽  
L. Q. GENG ◽  
T. CHEN ◽  
L. X. LI ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Magnetron Sputtering ◽  
Coulombic Efficiency ◽  
Electronic Conductivity ◽  
Lithium Ion ◽  
Rf Magnetron Sputtering ◽  
Rechargeable Batteries ◽  
Voltage Range

Amorphous V 2 O 5, LiPON and Li 2 Mn 2 O 4 thin films were fabricated by RF magnetron sputtering methods and the morphology of thin films were characterized by scanning electron microscopy. Then with these three materials deposited as the anode, solid electrolyte, cathode, and vanadium as current collector, a rocking-chair type of all-solid-state thin-film-type Lithium-ion rechargeable battery was prepared by using the same sputtering parameters on stainless steel substrates. Electrochemical studies show that the thin film battery has a good charge–discharge characteristic in the voltage range of 0.3–3.5 V, and after 30 cycles the cell performance turned to become stabilized with the charge capacity of 9 μAh/cm2, and capacity loss of single-cycle of about 0.2%. At the same time, due to electronic conductivity of the electrolyte film, self-discharge may exist, resulting in approximately 96.6% Coulombic efficiency.

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