Incorporation of two electron acceptors to improve the electron mobility and stability of perovskite solar cells

2019 ◽  
Vol 7 (27) ◽  
pp. 8344-8349 ◽  
Author(s):  
Xianglan Tang ◽  
Shuqin Xiao ◽  
Qingxia Fu ◽  
Yiwang Chen ◽  
Ting Hu

A PCBM:ITIC mixture interlayer was formed on perovskite to improve charge mobility and device stability.

2018 ◽  
Vol 6 (18) ◽  
pp. 4912-4918 ◽  
Author(s):  
Chuang Yao ◽  
Cheng Peng ◽  
Yezi Yang ◽  
Lei Li ◽  
Maolin Bo ◽  
...  

F–π interactions play a key role in improving the electron mobility of fluorinated electron acceptors for non-fullerene OSCs.


Nanomaterials ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 720 ◽  
Author(s):  
Hang Dong ◽  
Shangzheng Pang ◽  
Yi Zhang ◽  
Dazheng Chen ◽  
Weidong Zhu ◽  
...  

Due to the low temperature fabrication process and reduced hysteresis effect, inverted p-i-n structured perovskite solar cells (PSCs) with the PEDOT:PSS as the hole transporting layer and PCBM as the electron transporting layer have attracted considerable attention. However, the energy barrier at the interface between the PCBM layer and the metal electrode, which is due to an energy level mismatch, limits the electron extraction ability. In this work, an inorganic aluminum-doped zinc oxide (AZO) interlayer is inserted between the PCBM layer and the metal electrode so that electrons can be collected efficiently by the electrode. It is shown that with the help of the PCBM/AZO bilayer, the power conversion efficiency of PSCs is significantly improved, with negligible hysteresis and improved device stability. The UPS measurement shows that the AZO interlayer can effectively decrease the energy offset between PCBM and the metal electrode. The steady state photoluminescence, time-resolved photoluminescence, transient photocurrent, and transient photovoltage measurements show that the PSCs with the AZO interlayer have a longer radiative carrier recombination lifetime and more efficient charge extraction efficiency. Moreover, the introduction of the AZO interlayer could protect the underlying perovskite, and thus, greatly improve device stability.


Author(s):  
Sai Ma ◽  
Gui-Zhou Yuan ◽  
Ying Zhang ◽  
Ning Yang ◽  
Yujing Li ◽  
...  

After a decade of research and development on the perovskite solar cells (PSCs), the achievements targeting the device stability have fallen far behind the progress made in the photoelectric conversion...


2019 ◽  
Vol 32 (4) ◽  
pp. 1906374 ◽  
Author(s):  
Wei Hui ◽  
Yingguo Yang ◽  
Quan Xu ◽  
Hao Gu ◽  
Shanglei Feng ◽  
...  

2017 ◽  
Vol 5 (23) ◽  
pp. 11462-11482 ◽  
Author(s):  
Shida Yang ◽  
Weifei Fu ◽  
Zhongqiang Zhang ◽  
Hongzheng Chen ◽  
Chang-Zhi Li

In this review, we first highlighted recent progress in high-performance perovskite solar cells (PVSCs) with a discussion of the fabrication methods and PVSCs-based tandem solar cells. Furthermore, the stability issue of PVSCs and strategies to improve material and device stability have been discussed, and finally, a summary of the recent progress in lead-free perovskites has been presented.


2019 ◽  
Vol 6 (1) ◽  
pp. 1970004
Author(s):  
Chuanjiang Qin ◽  
Toshinori Matsushima ◽  
Dino Klotz ◽  
Takashi Fujihara ◽  
Chihaya Adachi

2017 ◽  
Vol 26 (1) ◽  
pp. 018401 ◽  
Author(s):  
Chao Xia ◽  
Wei-Dong Song ◽  
Chong-Zhen Zhang ◽  
Song-Yang Yuan ◽  
Wen-Xiao Hu ◽  
...  

2021 ◽  
Vol 2145 (1) ◽  
pp. 012027
Author(s):  
R Thanimkan ◽  
B Namnuan ◽  
S Chatraphorn

Abstract The requirements of electron transport layer (ETL) for high efficiency Perovskite solar cells (PSCs) are, for example, appropriate band energy alignment, high electron mobility, high optical transmittance, high stability, and easy processing. SnO2 has attracted more attention as ETL for PSCs because it has diverse advantages, e.g., wide bandgap energy, excellent optical and chemical stability, high transparency, high electron mobility, and easy preparation. The SnO2 ETL was fabricated by RF magnetron sputtering technique to ensure the chemical composition and uniform layer thickness when compared to the use of chemical solution via spin-coating method. The RF power was varied from 60 - 150 W. The Ar sputtering gas pressure was varied from 1 × 10−3 - 6 × 10−3 mbar while keeping O2 partial pressure at 1 × 10−4 mbar. The thickness of SnO2 layer decreases as the Ar gas pressure increases resulting in the increase of sheet resistance. The surface morphology and optical transmission of the SnO2 ETL were investigated. It was found that the optimum thickness of SnO2 layer was approximately 35 - 40 nm. The best device shows Jsc = 27.4 mA/cm2, Voc = 1.03 V, fill factor = 0.63, and efficiency = 17.7%.


Sign in / Sign up

Export Citation Format

Share Document