Tuning valley polarization in two-dimensional ferromagnetic heterostructures

2019 ◽  
Vol 7 (47) ◽  
pp. 14932-14937
Author(s):  
Yu-Yun Sun ◽  
Liyan Shang ◽  
Weiwei Ju ◽  
Yi-Peng An ◽  
Shi-Jing Gong ◽  
...  

Large and tunable valley polarization induced by magnetic proximity effect in MX2/Cr2Ge2Te6 (M = Mo, W; X = Se, Te) heterostructures.

2021 ◽  
Vol 32 (22) ◽  
pp. 225201
Author(s):  
Changcheng Zhang ◽  
Shuo Zhang ◽  
Yifeng Lin ◽  
Junguang Tao ◽  
Lixiu Guan

2019 ◽  
Vol 21 (13) ◽  
pp. 6984-6990 ◽  
Author(s):  
Kai Nie ◽  
Xiaocha Wang ◽  
Wenbo Mi

The electronic structure and magnetic anisotropy of a 2D SnO/CrN heterostructure can be tailored by strains and interlayer distances.


2019 ◽  
Vol 21 (46) ◽  
pp. 25788-25796 ◽  
Author(s):  
Sushant Kumar Behera ◽  
Mayuri Bora ◽  
Sapta Sindhu Paul Chowdhury ◽  
Pritam Deb

Schematic of the magnetic proximity effect in a van der Waals heterostructure formed by a graphene monolayer, induced by its interaction with a two-dimensional ferromagnet (CrBr3) for designing a single-gate field effect transistor.


2021 ◽  
pp. 2150390
Author(s):  
Yu Sun ◽  
Zi-Lin Yuan ◽  
Qian-Ze Li ◽  
Cai-Xin Zhang ◽  
Ke-Qiu Chen ◽  
...  

Generating and manipulating valley polarization in a controlled method is significant. The inherently broken centrosymmetry of the buckled honeycomb structures gives it both ferroelectricity and valley degree of freedom, which provides an opportunity to realize electrically controlled valley polarization. In the first step, we explored the origin of buckling. The hexagonal structure is polar due to buckling of the surface, but the degree of buckling and the energy barrier to switching electric polarization are determined not solely by the chemical composition. We combined the electronegativity difference, bond length and the distribution of charge density to describe quantificationally the polarity of chemical bonds. It shows the characteristics of relatively long bond-length but relatively small electronegativity-difference. For exploring the ferroelectricity of buckling structures and the behavior of ferroelectric (FE) control of the valley degree of freedom, the [Formula: see text]-GaP is used as a model system to elucidate the strain effect on FE behavior and the magnetic proximity effect on the polarization and switching of valley. We found that the spontaneous polarization is positively correlated with the electronegativity difference within a certain range, and the compression strain can effectively manipulate spontaneous polarization and switch barrier. A combination of the magnetic proximity effect and the inversion of electric polarization can generate and switch valley polarization effectively.


2021 ◽  
Vol 103 (12) ◽  
Author(s):  
Hai-Xia Cheng ◽  
Jun Zhou ◽  
Wei Ji ◽  
Yan-Ning Zhang ◽  
Yuan-Ping Feng

Author(s):  
Walid Amamou ◽  
Igor V. Pinchuk ◽  
Amanda H. Trout ◽  
Robert E. A. Williams ◽  
Nikolas Antolin ◽  
...  

2018 ◽  
Vol 10 (2) ◽  
Author(s):  
Xiao Liang ◽  
Guoyi Shi ◽  
Longjiang Deng ◽  
Fei Huang ◽  
Jun Qin ◽  
...  

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