Rationally designed piezoelectric charge polarity at interfaces for largely improving photodiode performance by piezo-phototronic effects

2020 ◽  
Vol 8 (45) ◽  
pp. 16057-16066
Author(s):  
Fangpei Li ◽  
Wenbo Peng ◽  
Zijian Pan ◽  
Yongning He
Keyword(s):  
Coupling Effect ◽  
Semiconductor Interface ◽  
Piezoelectric Semiconductor ◽  
Improve Device ◽  
Piezoelectric Charge

The coupling effect at the two piezoelectric semiconductor interface can be designed to largely improve device photoresponse performances.

Tribo-thermoelectric and tribovoltaic coupling effect at metal-semiconductor interface

2021 ◽  
Vol 16 ◽  
pp. 100295
Author(s):  
Z. Zhang ◽  
T. He ◽  
J. Zhao ◽  
G. Liu ◽  
Z.L. Wang ◽  
...  
Keyword(s):  
Coupling Effect ◽  
Semiconductor Interface

scholarly journals Typical transient effects in a piezoelectric semiconductor nanofiber under a suddenly applied axial time-dependent force

2021 ◽  
Author(s):  
Wanli Yang ◽  
Yuxing Liang
Keyword(s):  
Doping Concentration ◽  
Electromechanical Coupling ◽  
Coupling Effect ◽  
Continuity Condition ◽  
Charge Carriers ◽  
Time Dependent ◽  
Transient Effects ◽  
Simplified Models ◽  
Piezoelectric Semiconductor ◽  
Electronic Performance

AbstractBased on the mechanical motion equation, Gauss’s law, and the current continuity condition, we study a few typical transient effects in a piezoelectric semiconductor (PS) fiber to realize the startup and turning-off functions of common piezotronic devices. In this study, the transient extensional vibration induced by a suddenly applied axial time-dependent force is examined in a cantilevered n-type ZnO nanofiber. Neither the magnitude of the loadings nor the doping concentration significantly affects the propagation caused by disturbance of the axial displacement. However, both of the factors play an important role in the propagation caused by disturbance of the electron concentrations. This indicates that the electromechanical coupling effect can be expected to directly determine the electronic performance of the devices. In addition, the assumption of previous simplified models which neglect the charge carriers in Gauss’s law is discussed, showing that this assumption has a little influence on the startup state when the doping concentration is smaller than 1021 m−3. This suggests that the screening effect of the carriers on the polarized electric field is much reduced in this situation, and that the state is gradually transforming into a pure piezoelectric state. Nevertheless, the carriers can provide a damping effect, which means that the previous simplified models do not sufficiently describe the turning-off state. The numerical results show that the present study has referential value with respect to the design of newly multifunctional PS devices.

SURFACE MODES AT A FERRITE-SEMICONDUCTOR INTERFACE

1984 ◽  
Vol 45 (C5) ◽  
pp. C5-275-C5-284
Author(s):  
A. D. Boardman ◽  
A. K. Irving
Keyword(s):  
Semiconductor Interface ◽  
Surface Modes

An hourglass-type electromagnetic isolator with negative resistance electromagnetic shunt circuit

2020 ◽  
Vol 64 (1-4) ◽  
pp. 549-556
Author(s):  
Yajun Luo ◽  
Linwei Ji ◽  
Yahong Zhang ◽  
Minglong Xu ◽  
Xinong Zhang
Keyword(s):  
Vibration Isolation ◽  
Electromechanical Coupling ◽  
Coupling Effect ◽  
Negative Resistance ◽  
Isolation System ◽  
Amplitude Vibration ◽  
Vibration Responses ◽  
The Stability ◽  
Isolation Performance ◽  
Shunt Circuit

The present work proposed an hourglass-type electromagnetic isolator with negative resistance (NR) shunt circuit to achieve the effective suppression of the micro-amplitude vibration response in various advanced instruments and equipment. By innovatively design of combining the displacement amplifier and the NR electromagnetic shunt circuit, the current new type of vibration isolator not only can effectively solve the problem of micro-amplitude vibration control, but also has significant electromechanical coupling effect, to obtain excellent vibration isolation performance. The design of the isolator and motion relationship is presented firstly. The electromechanical coupling dynamic model of the isolator is also given. Moreover, the optimal design of the NR electromagnetic shunt circuit and the stability analysis of the vibration isolation system are carried out. Finally, the simulation results about the transfer function and vibration responses demonstrated that the isolator has a significant isolation performance.

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