Kyropoulos Growth and Characterization of Monoclinic α-Bi2B8O15 Single Crystal with Noncentrosymmetric Structure

CrystEngComm ◽  
2021 ◽  
Author(s):  
Mengdi Fan ◽  
guangda wu ◽  
Xinle Wang ◽  
Fapeng Yu ◽  
Chun Wang ◽  
...  
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Diffraction Analysis ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Borate Crystal ◽  
Kyropoulos Method

Monoclinic bismuth-based borate crystal α-Bi2B8O15 was grown by the Kyropoulos method. High resolution X-ray diffraction analysis showed that the full width at half-maximum of the Y plate was about 0.04°...

Synthesis and characterization of the pentazolate anion cyclo-N5ˉ in (N5)6(H3O)3(NH4)4Cl

Science ◽  
2017 ◽  
Vol 355 (6323) ◽  
pp. 374-376 ◽  
Author(s):  
Chong Zhang ◽  
Chengguo Sun ◽  
Bingcheng Hu ◽  
Chuanming Yu ◽  
Ming Lu
Keyword(s):  
Thermal Analysis ◽  
Single Crystal ◽  
Diffraction Analysis ◽  
Decomposition Temperature ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Onset Decomposition Temperature ◽  
The Stability

Pentazole (HN5), an unstable molecular ring comprising five nitrogen atoms, has been of great interest to researchers for the better part of a century. We report the synthesis and characterization of the pentazolate anion stabilized in a (N5)6(H3O)3(NH4)4Cl salt. The anion was generated by direct cleavage of the C–N bond in a multisubstituted arylpentazole using m-chloroperbenzoic acid and ferrous bisglycinate. The structure was confirmed by single-crystal x-ray diffraction analysis, which highlighted stabilization of the cyclo-N5ˉ ring by chloride, ammonium, and hydronium. Thermal analysis indicated the stability of the salt below 117°C on the basis of thermogravimetry-measured onset decomposition temperature.

High Resolution X-Ray Diffraction Analysis of Piezoelectric LiNbO3 Films.

1995 ◽  
Vol 401 ◽  
Author(s):  
Yoshihiko Shibata ◽  
Naohiro Kuze ◽  
Masahiro Matsui ◽  
Masaki Kanal ◽  
Tomoji Kawai
Keyword(s):  
Laser Ablation ◽  
High Resolution ◽  
The Other ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates

AbstractThin LINbO3 films are deposited on (001) sapphire and (001) LiTaO3 substrates by using pulsed excimer-laser ablation. These films are evaluated by high-resolution X-ray diffraction (HRXRD) analysis. Strained LiNbO3 films in which the a-axis is longer and the c-axis is shorter than those of LiNbO3 single crystals are deposited on the sapphire substrates. On the other hand, extremely high-quality LiNbO3 films in which the a-axis of the films is the same as that of substrates are grown on the LiTaO substrates. X-ray rocking curves for the (006) reflection showed very narrow full width at half maximum (FWHM) of 208 arcsec for the films on the sapphire substrates, and 9 arcsec for the films on LiTaO3 substrates.

Characterization of an Yb:LuVO4 single crystal using X-ray topography, high-resolution X-ray diffraction, and X-ray photoelectron spectroscopy

2011 ◽  
Vol 80 (10) ◽  
pp. 1001-1007 ◽  
Author(s):  
W. Paszkowicz ◽  
P. Romanowski ◽  
J. Bąk-Misiuk ◽  
W. Wierzchowski ◽  
K. Wieteska ◽  
...  
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray

Domain structure of epitaxial PbTiO3 films grown on vicinal (001) SrTiO3

1997 ◽  
Vol 12 (5) ◽  
pp. 1297-1305 ◽  
Author(s):  
C. D. Theis ◽  
D. G. Schlom
Keyword(s):  
Diffraction Analysis ◽  
Pulsed Laser Deposition ◽  
Domain Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray

Epitaxial PbTiO3 films have been grown on vicinal (001) SrTiO3 substrates by pulsed laser deposition. Vicinal SrTiO3 substrates with misorientations up to 9° from (001) were used, and the influence of the direction of misorientation on the resulting domain structure was studied. 4-circle x-ray diffraction analysis indicates that thin (40 nm) PbTiO3 films are completely c-axis oriented [rocking curve full-width-at-half-maximum (FWHM) of 0.25° for the 002 reflection] and that thicker films (∼ 200 nm) contain mixed a-axis and c-axis PbTiO3 domains due to twinning along {011} planes. The [100] axis of the a-axis domains is misoriented by 2.1° to 3.3° toward 〈100〉 substrate directions with respect to the substrate normal. In contrast to growth on well-oriented (001) SrTiO3 surfaces where the four equivalent tilts of the [100] axis of the a-axis domains are equally likely, on vicinal SrTiO3 the a-axis domains are preferentially oriented in an uphill direction with respect to the crystallographic miscut.

Heteroepitaxial Growth of In203 on Ysz (100) Single Crystal Surface

1999 ◽  
Vol 558 ◽  
Author(s):  
M. Orita ◽  
H. Ohta ◽  
H. Tanji ◽  
H. Hosono ◽  
H. Kawazoe
Keyword(s):  
Single Crystal ◽  
Crystal Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Full Width ◽  
Half Maximum ◽  
Single Crystal Surface ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTIn203 films were deposited on YSZ (001) single crystal surface at 800°C at an oxygen pressure of 14 Pa by pulsed laser deposition (PLD) method. A heteroepitaxial relationship between the film and the substrate was seen in TEM photographs and X-ray diffraction measurements. The w locking curve full width of half maximum (FWHM) of the In203 (004) x-ray diffraction was 0.06°. Film conductivities were ∼10 S/cm or less, while carriers on the order of lO18/cm3 were generated.

Synthesis and characterization of ITr-protected group 11 metal trimethylsilylchalcogenolates

2020 ◽  
pp. 1-9
Author(s):  
Dickron R. Nahhas ◽  
John F. Corrigan
Keyword(s):  
Single Crystal ◽  
Diffraction Analysis ◽  
Coordination Compounds ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Protected Group ◽  
Copper Coordination

This work describes the synthesis of group 11 metal trimethylsilylchalcogenolate complexes [(ITr)M-ESiMe3] stabilized by the large NHC ligand bis-1,3-tritylimidazole-2-ylidene (ITr). The thiolates and selenolates of Cu, Ag, and Au are accessed from either [(ITr)MOAc] (M = Cu, Ag) and E(SiMe3)2 or [(ITr)AuCl] and Li[ESiMe3] (E = S, Se). All complexes were characterized spectroscopically and, for the copper coordination compounds, via single crystal X-ray diffraction analysis.

Comparative Study of 3C-GaN Grown on Semi-Insulating 3C-SiC/Si(100) Substrates

2009 ◽  
Vol 615-617 ◽  
pp. 943-946 ◽  
Author(s):  
Elena Tschumak ◽  
Katja Tonisch ◽  
Jörg Pezoldt ◽  
Donat J. As
Keyword(s):  
Residual Stress ◽  
Gallium Nitride ◽  
High Resolution ◽  
Silicon Substrates ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Grown Layer ◽  
X Ray ◽  
Cubic Gan

Cubic gallium nitride epitaxial layers grown on differently carbonized silicon substrates were studied by high resolution X-ray diffraction. In the case of cubic GaN layers with equal layer thickness an improvement of the layer quality in terms of full width of the half maximum can be achieved by using higher carbonization temperatures. The higher crystalline quality led to an in¬crease of the residual stress in the grown layer. An increase in the thickness of the cubic Gallium Nitride allows to improve the crystallinity and to reduce the residual stress.

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