High Resolution X-Ray Diffraction Analysis of Piezoelectric LiNbO3 Films.

1995 ◽  
Vol 401 ◽  
Author(s):  
Yoshihiko Shibata ◽  
Naohiro Kuze ◽  
Masahiro Matsui ◽  
Masaki Kanal ◽  
Tomoji Kawai
Keyword(s):  
Laser Ablation ◽  
High Resolution ◽  
The Other ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates

AbstractThin LINbO3 films are deposited on (001) sapphire and (001) LiTaO3 substrates by using pulsed excimer-laser ablation. These films are evaluated by high-resolution X-ray diffraction (HRXRD) analysis. Strained LiNbO3 films in which the a-axis is longer and the c-axis is shorter than those of LiNbO3 single crystals are deposited on the sapphire substrates. On the other hand, extremely high-quality LiNbO3 films in which the a-axis of the films is the same as that of substrates are grown on the LiTaO substrates. X-ray rocking curves for the (006) reflection showed very narrow full width at half maximum (FWHM) of 208 arcsec for the films on the sapphire substrates, and 9 arcsec for the films on LiTaO3 substrates.

Kyropoulos Growth and Characterization of Monoclinic α-Bi2B8O15 Single Crystal with Noncentrosymmetric Structure

CrystEngComm ◽  
2021 ◽  
Author(s):  
Mengdi Fan ◽  
guangda wu ◽  
Xinle Wang ◽  
Fapeng Yu ◽  
Chun Wang ◽  
...  
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Diffraction Analysis ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Borate Crystal ◽  
Kyropoulos Method

Monoclinic bismuth-based borate crystal α-Bi2B8O15 was grown by the Kyropoulos method. High resolution X-ray diffraction analysis showed that the full width at half-maximum of the Y plate was about 0.04°...

InN Nano Rods and Epitaxial Layers Grown by HVPE on Sapphire Substrates and GaN, AlGaN, AlN Templates

2005 ◽  
Vol 892 ◽  
Author(s):  
Alexander Syrkin ◽  
Alexander Usikov ◽  
Vitali Soukhoveev ◽  
Oleg Kovalenkov ◽  
Vladimir Ivantsov ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Hydride Vapor Phase Epitaxy ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Nano Crystalline ◽  
Nano Rods

AbstractThis paper contains results on InN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire, GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes were carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 650°C. Arrays of nano-crystalline InN rods with various shapes were grown directly on sapphire substrates. Continuous InN layers were grown on GaN/sapphire, AlN/sapphire and AlGaN/sapphire template substrates. X-ray diffraction rocking curves for the (00.2) InN reflection exhibit the full width at half maximum (FWHM) as narrow as 0.075 deg. for the nano-rods and 0.128 deg. for the continuous layers grown on GaN/sapphire templates.

Comparative Study of 3C-GaN Grown on Semi-Insulating 3C-SiC/Si(100) Substrates

2009 ◽  
Vol 615-617 ◽  
pp. 943-946 ◽  
Author(s):  
Elena Tschumak ◽  
Katja Tonisch ◽  
Jörg Pezoldt ◽  
Donat J. As
Keyword(s):  
Residual Stress ◽  
Gallium Nitride ◽  
High Resolution ◽  
Silicon Substrates ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Grown Layer ◽  
X Ray ◽  
Cubic Gan

Cubic gallium nitride epitaxial layers grown on differently carbonized silicon substrates were studied by high resolution X-ray diffraction. In the case of cubic GaN layers with equal layer thickness an improvement of the layer quality in terms of full width of the half maximum can be achieved by using higher carbonization temperatures. The higher crystalline quality led to an in¬crease of the residual stress in the grown layer. An increase in the thickness of the cubic Gallium Nitride allows to improve the crystallinity and to reduce the residual stress.

Effects of Sputtering Pressure on (ZnO)x(InN)1-x Crystal Film Growth at 450°C

2018 ◽  
Vol 941 ◽  
pp. 2093-2098
Author(s):  
Naho Itagaki ◽  
Kazuto Takeuchi ◽  
Nanoka Miyahara ◽  
Kouki Imoto ◽  
Hyun Woong Seo ◽  
...  
Keyword(s):  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal Film ◽  
Crystal Films ◽  
Sputtering Pressure

We studied effects of sputtering pressure on growth of (ZnO)x(InN)1-xcrystal films deposited at 450°C by rf magnetron sputtering. Epitaxial growth of (ZnO)x(InN)1-xfilms was realized on single-crystalline ZnO template. X-ray diffraction measurements show that full width at half maximum of the rocking curves from the (101) plane of the films reaches minimum value of 0.11º at 0.5 Pa. The sputtering gas pressure is a key tuning knob for controlling the crystal quality of ZION films.

On the problem of overlapping ω scans measured on thin films deposited on monocrystal substrates

1999 ◽  
Vol 32 (4) ◽  
pp. 736-743 ◽  
Author(s):  
D. Machajdík ◽  
A. Pevala ◽  
A. Rosová ◽  
K. Fröhlich ◽  
J. Šouc ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spectral Characteristics ◽  
Full Width ◽  
X Ray Diffraction ◽  
Resolution Function ◽  
High Quality ◽  
Experimental Procedure ◽  
X Ray ◽  
Crystallographic Planes

CeO2thin films deposited on sapphire monocrystal substrates were used for an experimental study of the nature of extremely narrow overlapped maxima on X-ray diffraction ω scans. Full width at half-maximum (FWHM) values of such maxima typically reached the resolution function of the diffractometer. A comparative study of the influence of various diffractometer set-ups on the spectral characteristics of the X-ray beam in relation to the above-mentioned phenomenon was carried out. A surrounding (λmin− λmax) or (2θmin− 2θmax) of the strong substrate reflection was obtained, where a substrate contribution to an ω scan measured on thin-film reflection can be expected. Two possible origins of the narrow maxima are discussed: (a) a contribution of a part of the X-ray beam having λ ≠ λKαthat diffracts on a set of substrate crystallographic planes parallel to the thin-film crystallographic planes used for the ω-scan measurement; and (b) the presence in part of the thin film of a perfect monocrystal-like quality with practically no mosaicity. The principles of this approach and experimental procedure are reported, and on this basis it is possible to distinguish between the two possible origins of the narrow overlapped maxima. It is shown that under appropriate conditions, an extremely high quality CeO2thin film can be grown. The FWHM value of its ω scan can reach the value of diffractometer instrumental broadening obtained for a perfect monocrystal.

La cristallinité de l'illite revisitée: un bilan des connaissances acquises ces trente dernières années

Clay Minerals ◽  
2001 ◽  
Vol 36 (2) ◽  
pp. 143-157 ◽  
Author(s):  
B. Kübler ◽  
D. Goy-Eggenberger
Keyword(s):  
Clay Minerals ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Illite Crystallinity ◽  
X Ray ◽  
Diffraction Patterns ◽  
Gaseous Hydrocarbons ◽  
Definition Of ◽  
Technological Improvements

AbstractThe main reason for the initial determinations of illite crystallinity (IC) was to support the exploration for liquid and gaseous hydrocarbons. The application in 1960 of the Weaver Sharpness Ratio to core materials of a borehole from eastern France indicated that it was not a reliable tool for identifying well-crystallized illite. This ratio was later replaced by the Full Width at Half-Maximum (FWHM), the value of which decreases regularly and consistently towards greenschist facies. The use of FWHM allowed a precise definition of the anchimetamorphic zone between the upper diagenesis and the epimetamorphism. Afterwards, analysis of weak-tointermediate diagenetic sequences showed that illite crystallinity decreases together with the amount of swelling interlayers in mixed-layer clay minerals. Technological improvements, such as computing and modelling of X-ray diffraction patterns, increased the analytical precision relative to measurements of the plain FWHM. Consequently, illite crystallinity went back to its initial use, namely detection of the transitions between diagenesis, anchi- and epi-metamorphism in smectitefree lithologies, where it can be used as a stratigraphic and mineralogic marker of alteration stages.

Effect of Annealing on Electrical Degradation Characteristics of ZnO Varistors

2008 ◽  
Vol 388 ◽  
pp. 7-10 ◽  
Author(s):  
Masayuki Takada ◽  
Shinzo Yoshikado
Keyword(s):  
Grain Boundaries ◽  
Diffraction Peak ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Conditions ◽  
Electrical Degradation ◽  
Zno Varistors ◽  
Triple Points

The effects of the thermally annealing of Bi-Mn-Co-Sb2O3-added ZnO varistors on their electrical degradation were investigated. For the samples with 0.01mol% Sb2O3added and without Sb2O3, no marked difference in the non linearity index of the voltage-current (V-I) characteristics was observed upon electrical degradation for the annealed and nonannealed samples. Upon increasing the amount of Sb2O3 added, the values of  increased after electrical degradation for the annealed samples. Moreover, the value of  after electrical degradation was proportional to the full width at half maximum (FWHM) of the X-ray diffraction peak for Zn2.33Sb0.67O4-type spinel particles under various annealing conditions. The added Sb2O3 did not dissolve in the ZnO grains but became segregated at grain boundaries. Therefore, it is speculated that the increase in the FWHM for the spinel particles is due to the increase in the numbers of fine spinel particles at grain boundaries and triple points.

OS1205 Relationship between Full Width at Half Maximum of White X-ray Diffraction Profile and Plastic Strain

2009 ◽  
Vol 2009 (0) ◽  
pp. 654-655
Author(s):  
Takayoshi SUZUKI ◽  
Jun-ichi SHIBANO ◽  
Koji KIRIYAMA ◽  
Takayuki ARAI ◽  
Setsuo MIURA ◽  
...  
Keyword(s):  
Plastic Strain ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Diffraction Profile ◽  
X Ray

TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE

1999 ◽  
Vol 595 ◽  
Author(s):  
W.L. Sarney ◽  
L. Salamanca-Riba ◽  
V. Ramachandran ◽  
R.M Feenstra ◽  
D.W. Greve
Keyword(s):  
Low Temperatures ◽  
Stacking Faults ◽  
Full Width ◽  
X Ray Diffraction ◽  
High Quality ◽  
Double Crystal ◽  
Tem Analysis ◽  
Rocking Curve ◽  
X Ray ◽  
Substrate Temperatures

AbstractGaN films grown on SiC (0001) by MBE at various substrate temperatures (600° - 750° C) were characterized by RHEED, STM, x-ray diffraction, AFM and TEM. This work focuses on the TEM analysis of the films' features, such as stacking faults and dislocations, which are related to the substrate temperature. There are several basal plane stacking faults in the form of cubic inclusions for samples grown at low temperatures compared to those grown at high temperatures. The dislocation density is greatest for the film grown at 600°C, and it steadily decreases with increasing growth temperatures. Despite the presence of various defects, x-ray analysis shows that the GaN films are of high quality. The double crystal rocking curve full width at half maximum (FWHM) for the GaN (0002) peak is less than 2 arc-minutes for all of the films we measured and it decreases with increasing growth temperature.

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