scholarly journals Designing new ferromagnetic double perovskites: the coexistence of polar distortion and half-metallicity

2021 ◽  
Author(s):  
Neda Rahmani ◽  
Mohammad Ebrahim Ghazi ◽  
Morteza Izadifard ◽  
Alireza Shabani ◽  
Jost Adam
Keyword(s):  
Double Perovskites ◽  
Half Metallicity ◽  
Spintronic Device ◽  
Device Applications

The concurrence of half-metallicity and polar nature in Ca2MnVO6 and Ba2MnVO6 double perovskites making them suitable candidates for spintronic device applications.

scholarly journals Prediction of room-temperature half-metallicity in layered halide double perovskites

2019 ◽  
Vol 5 (1) ◽  
Author(s):  
Jian Xu ◽  
Changsong Xu ◽  
Jian-Bo Liu ◽  
Laurent Bellaiche ◽  
Hongjun Xiang ◽  
...  
Keyword(s):  
Room Temperature ◽  
High Efficiency ◽  
Double Perovskites ◽  
Nanoscale Device ◽  
Half Metallicity ◽  
Thermal Stabilities ◽  
Half Metallic ◽  
Large Bulk ◽  
Device Applications ◽  
Ferromagnetic Ordering

AbstractHalf-metallic ferromagnets (HMFs) that possess intriguing physical properties with completely spin-polarized current are key candidates for high-efficiency spintronic devices. However, HMFs that could simultaneously have high Curie temperature (Tc), wide half-metallic gap (ΔHM), and large bulk magnetocrystalline anisotropy energy (MAE) are very rare, which significantly restrict their room-temperature (RT) applications. In this article, through materials screening in layered halide double perovskites (LHDPs), we have theoretically identified that Cs4FePb2Cl12, which has good crystallographic, dynamic and thermal stabilities, possesses an intrinsic half-metallic ground-state with a high Tc ~ 450 K. Interestingly, the long-range ferromagnetic ordering in bulk Cs4FePb2Cl12 is contributed by the strong super-superexchange interactions between the neighboring Fe d orbitals mediated by different anionic Cl p orbitals. The high Tc of layered Cs4FePb2Cl12 can be well maintained even in the monolayer limitation, i.e., Tc ~ 370 K for Cs4FePb2Cl12 monolayer, which is critical for nanoscale device applications. Moreover, both bulk and monolayer Cs4FePb2Cl12 can exhibit wide ΔHM ~ 0.55 eV and large MAE >320 μeV/Fe, comparable to that of the best HMFs reported in the literature. Our findings can significantly extend the potentials of LHDPs for high-temperature spintronic applications.

Transition-Metal-Atom-Embedded Graphane and Its Spintronic Device Applications

2011 ◽  
Vol 115 (46) ◽  
pp. 22701-22706 ◽  
Author(s):  
Haixia Da ◽  
Yuan Ping Feng ◽  
Gengchaiu Liang
Keyword(s):  
Transition Metal ◽  
Metal Atom ◽  
Transition Metal Atom ◽  
Spintronic Device ◽  
Device Applications

Thermal annealing and magnetic anisotropy of NiFe thin films on n+-Si for spintronic device applications

2015 ◽  
Vol 394 ◽  
pp. 253-259 ◽  
Author(s):  
Q.H. Lu ◽  
R. Huang ◽  
L.S. Wang ◽  
Z.G. Wu ◽  
C. Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Thermal Annealing ◽  
Spintronic Device ◽  
Device Applications

Fabrication of vertically aligned carbon nanotubes for spintronic device applications

2009 ◽  
Vol 19 (39) ◽  
pp. 7216 ◽  
Author(s):  
Elby Titus ◽  
Manoj K. Singh ◽  
Gil Cabral ◽  
Vladimir Paserin ◽  
P. Ramesh Babu ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Vertically Aligned Carbon Nanotubes ◽  
Spintronic Device ◽  
Aligned Carbon Nanotubes ◽  
Device Applications ◽  
Vertically Aligned

Study of nanosized copper-doped ZnO dilute magnetic semiconductor thick films for spintronic device applications

2017 ◽  
Vol 124 (1) ◽  
Author(s):  
Rayees Ahmad Zargar ◽  
Manju Arora ◽  
Riyaz Ahmed Bhat
Keyword(s):  
Dilute Magnetic Semiconductor ◽  
Thick Films ◽  
Magnetic Semiconductor ◽  
Spintronic Device ◽  
Device Applications ◽  
Doped Zno

scholarly journals Structural, magneto-electronic and thermophysical properties of the new d0 quaternary heusler compounds KSrCZ (Z =P, As, Sb)

2020 ◽  
Vol 66 (3 May-Jun) ◽  
pp. 265
Author(s):  
A. Taleb ◽  
A. Chahed ◽  
M. Boukli ◽  
H. Rozale ◽  
B. Amrani ◽  
...  
Keyword(s):  
Density Functional ◽  
Full Potential ◽  
Heusler Compounds ◽  
Half Metallicity ◽  
Half Metallic ◽  
Plane Wave Method ◽  
Physical Response ◽  
Device Applications ◽  
Frame Work ◽  
Linearized Augmented Plane Wave

Investigation of band structure and thermo-physical response of the d0 new quaternary Heusler compounds KSrCZ (Z = P, As, Sb) within the frame work of density functional theory with full potential linearized augmented plane wave method has been analyzed. Results showed that type-Y3 is the most favorable atomic arrangement. All the compounds are found to be half-metallic ferromagnetic materials with an integer magnetic moment of 2.00 μB and a half-metallic gap EHM of 0.292, 0.234, and 0.351 eV, respectively. The half-metallicity of KSrCZ (Z = P, As, Sb) compounds can be kept in a quite large hydrostatic strain. Thermoelectric properties of the KSrCZ (Z = P, As, Sb) materials are additionally computed over an extensive variety of temperature and it is discovered that all compounds demonstrates higher figure of merit. The properties of half-metallicity and higher Seebeck coefficient makes these materials a promising candidates for thermoelectric and spintronic device applications. 

Co/Ni multilayers with perpendicular anisotropy for spintronic device applications

2012 ◽  
Vol 100 (17) ◽  
pp. 172411 ◽  
Author(s):  
L. You ◽  
R. C. Sousa ◽  
S. Bandiera ◽  
B. Rodmacq ◽  
B. Dieny
Keyword(s):  
Perpendicular Anisotropy ◽  
Spintronic Device ◽  
Device Applications

Tailoring TMR Ratios by Ultrathin Magnetic Interlayers: A First-principles Investigation of Fe/MgO/Fe

2009 ◽  
Vol 1183 ◽  
Author(s):  
Peter Bose ◽  
Peter Zahn ◽  
Juergen Henk ◽  
Ingrid Mertig
Keyword(s):  
First Principles ◽  
Lattice Mismatch ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Buffer Layers ◽  
Spintronic Device ◽  
Single Interface ◽  
Small Lattice ◽  
Device Applications ◽  
Experimental Findings

AbstractFor spintronic device applications, large and in particular tunable tunnel magnetoresistance (TMR) ratios are inevitable. Fully crystalline and epitaxially grown Fe/MgO/Fe magnetic tunnel junctions (MTJs) are well suited for this purpose and, thus, are being intensively studied [1]. However, due to imperfect interfaces it is difficult to obtain sufficiently large TMR ratios that fulfill industrial demands (e.g. [2]).A new means to increase TMR ratios is the insertion of ultra-thin metallic buffer layers at one or at both of the Fe/MgO interfaces. With regard to their magnetic and electronic properties as well as their small lattice mismatch to Fe(001), Co and Cr spacer are being preferably investigated.We report on a systematic first-principles study of the effect of Co and Cr buffers (with thicknesses up to 6 ML) in Fe/MgO/Fe magnetic tunnel junctions (MTJs) on the spin-dependent conductance. The results of the transport calculations reveal options to specifically tune the TMR ratio. Symmetric junctions, i.e. with Co buffers at both interfaces, exhibit for some thicknesses much larger TMR ratios in comparison to those obtained for Fe-only electrodes. Further, antiferromagnetic Cr films at a single interface introduce TMR oscillations with a period of 2 ML, a feature which provides another degree of freedom in device applications. The comparison of our results with experimental findings shows agreement and highlights the importance of interfaces for the TMR effect.

scholarly journals Systematic investigation of the magneto-electronic structure and optical properties of new halide double perovskites Cs2NaMCl6 (M = Mn, Co and Ni) by spin polarized calculations

RSC Advances ◽  
2020 ◽  
Vol 10 (44) ◽  
pp. 26277-26287 ◽  
Author(s):  
Shabir Ahmad Mir ◽  
Dinesh C. Gupta
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Crystal Field ◽  
Systematic Investigation ◽  
Double Perovskites ◽  
Half Metallicity ◽  
Spin Polarized ◽  
Unpaired Electrons ◽  
D Orbitals

The unpaired electrons in the crystal field splitted d-orbitals of the M-site constituents are responsible for the half metallicity and magnetic character of the halide double perovskites.

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