scholarly journals Correction: MOF-derived PtCo/Co3O4 nanocomposites in carbonaceous matrices as high-performance ORR electrocatalysts synthesized via laser ablation techniques

Author(s):  
Erick L. Ribeiro ◽  
Elijah M. Davis ◽  
Mahshid Mokhtarnejad ◽  
Sheng Hu ◽  
Dibyendu Mukherjee ◽  
...  

Correction for ‘MOF-derived PtCo/Co3O4 nanocomposites in carbonaceous matrices as high-performance ORR electrocatalysts synthesized via laser ablation techniques’ by Erick L. Ribeiro et al., Catal. Sci. Technol., 2021, DOI: 10.1039/d0cy02099k.

Author(s):  
Erick Leonar Ribeiro ◽  
Elijah M Davis ◽  
Mahshid Mokhtarnejad ◽  
Sheng Hu ◽  
Dibyendu Mukherjee ◽  
...  

Rapidly expanding global energy demands due to fast-paced human-technology interfaces have propelled fuel cell technology as a sustainable energy-conversion alternative. Nonetheless, the rational development of such technology demands the engineering...


Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3244
Author(s):  
Jiuzhou Zhao ◽  
Zhenjun Li ◽  
Matthew Thomas Cole ◽  
Aiwei Wang ◽  
Xiangdong Guo ◽  
...  

The nanocone-shaped carbon nanotubes field-emitter array (NCNA) is a near-ideal field-emitter array that combines the advantages of geometry and material. In contrast to previous methods of field-emitter array, laser ablation is a low-cost and clean method that does not require any photolithography or wet chemistry. However, nanocone shapes are hard to achieve through laser ablation due to the micrometer-scale focusing spot. Here, we develop an ultraviolet (UV) laser beam patterning technique that is capable of reliably realizing NCNA with a cone-tip radius of ≈300 nm, utilizing optimized beam focusing and unique carbon nanotube–light interaction properties. The patterned array provided smaller turn-on fields (reduced from 2.6 to 1.6 V/μm) in emitters and supported a higher (increased from 10 to 140 mA/cm2) and more stable emission than their unpatterned counterparts. The present technique may be widely applied in the fabrication of high-performance CNTs field-emitter arrays.


2020 ◽  
Vol T171 ◽  
pp. 014029
Author(s):  
Guin Shaw ◽  
Wendy Garcia ◽  
Xunxiang Hu ◽  
Brian D Wirth

2001 ◽  
Vol 7 (S2) ◽  
pp. 1220-1221
Author(s):  
J. E. Dominguez ◽  
L. Fu ◽  
X. Q. Pan

Tin dioxide (SnO2) has been extensively studied and used as gas sensors to detect toxic gases such as CO, NOxand flammable gases like H2.[l] Recently, considerable researches have focused on thin film sensors due to their high performance as well as their integration compatibility with semiconductor technology for making microsensors and sensor arrays. [2] The performance of thin film sensors is remarkably influenced by the way they were fabricated.[3] Among various deposition techniques, pulsed laser deposition (PLD) has shown great prominence in the deposition of a wide variety of oxide thin film materials such as high Tc superconductors, semiconductors and dielectrics. in this work we present our experimental results on tin dioxide films deposited using pulsed laser ablation on sapphire (α -Al2O3) substrates with different surface orientations.Tin oxide films with a thickness of 100 nm were deposited on the (1012) and (0001) sapphire by pulsed laser ablation of ceramic SnO2 targets.


2015 ◽  
Vol 22 (04) ◽  
pp. 1550055 ◽  
Author(s):  
KHAWLA S. KHASHAN ◽  
MAYYADAH H. MOHSIN

In this work, carbon nitride ( C 3 N 4) nanoparticles (NPs) were synthesized by pulse laser ablation of graphite in ammonium solution, and deposited on silicon substrates by spray. Fourier transform infrared spectroscopy (FTIR), UV-visible spectrophotometer and transmission electron microscopy (TEM) were used to study bonding, absorption, size and morphology of the produce NPs. The FTIR absorption peaks at 2121.6, 1631.7 and 1384 cm-1 stretching vibration bond, it is inferred for the C ≡ N , C = N and C – N , respectively. Bonds suggests the formation, C 3 N 4 NPs. UV absorption peaks coincide with the electronic transitions corresponding to the formation, C 3 N 4 NPs with 3.98 eV optical bandgap. The TEM show the aggregation of the C 3 N 4 NPs with size ranges from 4 to 83 nm, and also the leaf-like structure are shown in the structure of C 3 N 4 suspension. High performance rectifying C 3 N 4/ Si heterojunction with a rectifying ratio exceeding 345 at V = 5 V was obtained, with high photoresponsivity of 2.33 A/W at 600 nm.The results show that C 3 N 4 NPs on silicon substrates will act as very good candidates for making high efficiency photodiodes.


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