Fabrication of amorphous metal oxide/p-BiVO4 photocathode: understanding the role of entropy for reducing nitrate to ammonia

2022 ◽  
Author(s):  
Fengfeng Wang ◽  
Qijia Ding ◽  
Yajie Bai ◽  
Hongye Bai ◽  
Song Wang ◽  
...  
Keyword(s):  
Catalytic Activity ◽  
Metal Oxide ◽  
Amorphous Metal ◽  
Thermodynamics And Kinetics ◽  
Chemical Microenvironment ◽  
Amorphous Metal Oxide

The controllable design of chemical microenvironment with the expected thermodynamics and kinetics for boosting catalytic activity and selectivity is still challenging. Herein, an amorphous metal oxide (A-MxOy) was employed to...

scholarly journals Amorphous Metal Oxide Bilayers to Avoid Sneak‐Path Currents for High‐Density Resistive Memory Arrays

2021 ◽  
pp. 2000222
Author(s):  
Shruti Nirantar ◽  
Md Ataur Rahman ◽  
Edwin Mayes ◽  
Madhu Bhaskaran ◽  
Sumeet Walia ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Amorphous Metal ◽  
High Density ◽  
Resistive Memory ◽  
Memory Arrays ◽  
Amorphous Metal Oxide

Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

2018 ◽  
Vol 10 (31) ◽  
pp. 25866-25870 ◽  
Author(s):  
Hong-Chih Chen ◽  
Ting-Chang Chang ◽  
Wei-Chih Lai ◽  
Guan-Fu Chen ◽  
Bo-Wei Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Amorphous Metal ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film ◽  
Amorphous Metal Oxide

scholarly journals Electronic structure and transport in amorphous metal oxide and amorphous metal oxynitride semiconductors

2019 ◽  
Vol 126 (12) ◽  
pp. 125702 ◽  
Author(s):  
Juhi Srivastava ◽  
Suhas Nahas ◽  
Somnath Bhowmick ◽  
Anshu Gaur
Keyword(s):  
Electronic Structure ◽  
Metal Oxide ◽  
Amorphous Metal ◽  
Amorphous Metal Oxide

scholarly journals Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

2016 ◽  
Vol 26 (17) ◽  
pp. 2820-2825 ◽  
Author(s):  
Pushpa Raj Pudasaini ◽  
Joo Hyon Noh ◽  
Anthony T. Wong ◽  
Olga S. Ovchinnikova ◽  
Amanda V. Haglund ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Metal Oxide ◽  
Electronic Devices ◽  
Amorphous Metal ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Amorphous Metal Oxide

scholarly journals Neuromorphic Chip Integrated with an LSI and Amorphous-metal-oxide Semiconductor Thin-film Synapse Devices

2022 ◽  
Author(s):  
Mutsumi Kimura ◽  
Yuki Shibayama ◽  
Yasuhiko Nakashima
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Digital Circuit ◽  
Amorphous Metal ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Compact Size ◽  
Neuromorphic Systems ◽  
Amorphous Metal Oxide ◽  
Self Learning

Abstract Artificial intelligences are promising in future societies, and neural networks are typical technologies with the advantages such as self-organization, self-learning, parallel distributed computing, and fault tolerance, but their size and power consumption are large. Neuromorphic systems are biomimetic systems from the hardware level, with the same advantages as living brains, especially compact size, low power, and robust operation, but some well-known ones are non-optimized systems, so the above benefits are only partially gained, for example, machine learning is processed elsewhere to download fixed parameters. To solve these problems, we are researching neuromorphic systems from various viewpoints. In this study, a neuromorphic chip integrated with an LSI and amorphous-metal-oxide semiconductor (AOS) thin-film synapse devices has been developed. The neuron elements are digital circuit, which are made in an LSI, and the synapse devices are analog devices, which are made of the AOS thin film and directly integrated on the LSI. This is the world's first hybrid chip where neuron elements and synapse devices of different functional semiconductors are integrated, and local autonomous learning is utilized, which becomes possible because the AOS thin film can be deposited without heat treatment and there is no damage to the underneath layer, and has all advantages of neuromorphic systems.

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