scholarly journals Enhanced dielectric properties with a significantly reduced loss tangent in (Mg2+, Al3+) co-doped CaCu3Ti4O12 ceramics: DFT and experimental investigations

RSC Advances ◽  
2021 ◽  
Vol 11 (40) ◽  
pp. 25038-25046
Author(s):  
Jakkree Boonlakhorn ◽  
Jedsada Manyam ◽  
Sriprajak Krongsuk ◽  
Prasit Thongbai ◽  
Pornjuk Srepusharawoot

Mg and Al atoms preferentially occupy Cu sites, creating liquid-phase sintering decomposition at grain boundary layers. This results in very high dielectric permittivity and a low loss tangent of the CaCu2.95Mg0.05Ti3.95Al0.05O12 ceramic.

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3230
Author(s):  
Theeranuch Nachaithong ◽  
Narong Chanlek ◽  
Pairot Moontragoon ◽  
Prasit Thongbai

(Co, Nb) co-doped rutile TiO2 (CoNTO) nanoparticles with low dopant concentrations were prepared using a wet chemistry method. A pure rutile TiO2 phase with a dense microstructure and homogeneous dispersion of the dopants was obtained. By co-doping rutile TiO2 with 0.5 at.% (Co, Nb), a very high dielectric permittivity of ε′ » 36,105 and a low loss tangent of tanδ » 0.04 were achieved. The sample–electrode contact and resistive outer-surface layer (surface barrier layer capacitor) have a significant impact on the dielectric response in the CoNTO ceramics. The density functional theory calculation shows that the 2Co atoms are located near the oxygen vacancy, creating a triangle-shaped 2CoVoTi complex defect. On the other hand, the substitution of TiO2 with Nb atoms can form a diamond-shaped 2Nb2Ti complex defect. These two types of complex defects are far away from each other. Therefore, the electron-pinned defect dipoles cannot be considered the primary origins of the dielectric response in the CoNTO ceramics. Impedance spectroscopy shows that the CoNTO ceramics are electrically heterogeneous, comprised of insulating and semiconducting regions. Thus, the dielectric properties of the CoNTO ceramics are attributed to the interfacial polarization at the internal insulating layers with very high resistivity, giving rise to a low loss tangent.


2012 ◽  
Vol 95 (5) ◽  
pp. 1497-1500 ◽  
Author(s):  
Somsack Vangchangyia ◽  
Ekaphan Swatsitang ◽  
Prasit Thongbai ◽  
Supree Pinitsoontorn ◽  
Teerapon Yamwong ◽  
...  

Author(s):  
Jakkree Boonlakhorn ◽  
Jirata Prachamon ◽  
Jedsada Manyam ◽  
Prasit Thongbai ◽  
Pornjuk Srepusharawoot

2002 ◽  
Vol 720 ◽  
Author(s):  
Satreerat Kampangkeaw ◽  
Charles T. Rogers

AbstractWe have measured the nonlinear dielectric properties of strontium titanate (STO) thin films grown on neodymium gallate (NGO) and lanthanum aluminate (LAO) substrates. The films prepared by off-axis pulsed laser deposition were characterized by their dielectric constant and loss tangent at 1 MHz and 2 GHz, and from room temperature down to 4 K. The resulting films show significant variations of dielectric properties with position of the substrates with respect to the plume axis. STO films on LAO substrates show low loss and high dielectric constant in regions near the plume axis. On the other hand, STO on NGO shows this effect only on the films grown far from the plume axis. We also obtained a figure of merit from the relative variation of the dielectric constant divided by the loss tangent in the presence of a DC electric field up to +/- 4 V/μm. Careful mapping of the plume crossection allowed us to improve the quality and reproducibility of the dielectric films, obtaining a best figure of merit at 2 GHz and 4 K close to 100 for NGO substrate but only well off axis.


RSC Advances ◽  
2015 ◽  
Vol 5 (48) ◽  
pp. 38452-38459 ◽  
Author(s):  
Linxiang He ◽  
Sie Chin Tjong

Core–shell copper nanowires for improving the dielectric performance of polystyrene.


2020 ◽  
Author(s):  
Jiangtao Fan ◽  
TianTian Yang ◽  
Zhenzhu Cao

Abstract The search for giant dielectric constant materials is imperative because of their potential for important applications for the areas of device miniaturization and energy storage. In this work, we report a (Zn + Ta) co-doped TiO2 (ZTTO) ceramics that manifests high dielectric permittivity (>104) and low dielectric loss. This dielectric property shows a high stability in wide temperature range (25-200℃) and frequency range(20-106Hz). The crystalline structure, microstructure and dielectric properties of ZTTO ceramics were systematically investigated. XPS, Impedance spectroscopy and frequency dependent dielectric constant under DC bias results reveal that the colossal dielectric properties of (Zn2+1/3Ta5+2/3)xTi1-xO2 ceramics were mainly caused by electron-pinned defect-dipoles (EPDD) model, internal barrier layer capacitance (IBLC) effect and electrode effect. This work would provide a guidance to further researching the colossal permittivity CP materials.


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