Origin of Enhanced Efficiency and Stability in Diblock Copolymer-Grafted Cd-Free Quantum Dot-Based Light-Emitting Diodes

Author(s):  
Yeseul Park ◽  
Benjamin Klöckner ◽  
Donghyo Hahm ◽  
Jaehoon Kim ◽  
Taesoo Lee ◽  
...  

The efficiency and operational lifetime of quantum dot (QD) based light-emitting diodes (QLEDs) are essentially affected by the electron–hole charge balance. Although various methods have been reported to improve the...

2019 ◽  
Vol 7 (32) ◽  
pp. 10082-10091 ◽  
Author(s):  
Yujin Lee ◽  
Hyo-Min Kim ◽  
Jeonggi Kim ◽  
Jin Jang

We demonstrated the remarkable improvement of efficiency roll-off and operational lifetime in red quantum dot light emitting diodes (R-QLEDs) by incorporating rubidium carbonate (Rb2CO3) in Mg doped ZnO (MZO) electron transporting layer (ETL).


2017 ◽  
Vol 50 ◽  
pp. 82-86 ◽  
Author(s):  
Jinyoung Yun ◽  
Jaeyun Kim ◽  
Ho-Kyun Jang ◽  
Kook Jin Lee ◽  
Jung Hwa Seo ◽  
...  

RSC Advances ◽  
2020 ◽  
Vol 10 (39) ◽  
pp. 23121-23127 ◽  
Author(s):  
Jun-hao Sun ◽  
Jia-hui Huang ◽  
Xu-yan Lan ◽  
Feng-chun Zhang ◽  
Ling-zhi Zhao ◽  
...  

Highly efficient blue quantum-dot light-emitting diodes have been realized by blending PEG into ZnO nanoparticles as an electron transport layer due to regulating charge balance and passivating the surface defect states of ZnO nanoparticles.


2019 ◽  
Vol 27 (16) ◽  
pp. A1287 ◽  
Author(s):  
Hyejin Kim ◽  
Woosuk Lee ◽  
Hyungsuk Moon ◽  
Sun Jung Kim ◽  
Ho Kyoon Chung ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1606
Author(s):  
Yu Luo ◽  
Junjie Wang ◽  
Pu Wang ◽  
Chaohuang Mai ◽  
Jian Wang ◽  
...  

We report the effects of ultraviolet (UV) irradiation and storage on the performance of ZnO-based inverted quantum-dot light-emitting diodes (QLEDs). The effects of UV irradiation on the electrical properties of ZnO nanoparticles (NPs) were investigated. We demonstrate that the charge balance was enhanced by improving the electron injection. The maximum external quantum efficiency (EQE) and power efficiency (PE) of QLEDs were increased by 26% and 143% after UV irradiation for 15 min. In addition, we investigated the storage stabilities of the inverted QLEDs. During the storage period, the electron current from ZnO gradually decreased, causing a reduction in the device current. However, the QLEDs demonstrated improvements in maximum EQE by 20.7% after two days of storage. Our analysis indicates that the suppression of exciton quenching at the interface of ZnO and quantum dots (QDs) during the storage period could result in the enhancement of EQE. This study provides a comprehension of the generally neglected factors, which could be conducive to the realization of high-efficiency and highly storage-stable practical applications.


2019 ◽  
Vol 39 (5) ◽  
pp. 0523003
Author(s):  
张文静 Zhang Wenjing ◽  
张芹 Zhang Qin ◽  
杨亮 Yang Liang ◽  
江莹 Jiang Ying ◽  
常春 Chang Chun ◽  
...  

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