Ytterbium complex with 2-(tosylamino)-benzylidene-N-(2-halobenzoyl)-hydrazones for solution-processable NIR OLEDs

2021 ◽  
Author(s):  
Liubov Olegovna Tcelykh ◽  
Andrey Aleksandrovich Vashchenko ◽  
Alexey Medved'ko ◽  
L. Marciniak ◽  
Alexey E. Aleksandrov ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Ytterbium Complexes ◽  
Solution Processable

A series of ytterbium complexes with halogenated 2-(tosylamino)-benzylidene-N-(2-benzoyl)-hydrazones was obtained for NIR OLED applications. Halogenation resulted in a significant solubility increase, while photophysical and electronic properties of the obtained complexes...

scholarly journals Hole-transporting side-chain polystyrenes based on TCTA with tuned glass transition and optimized electronic properties

RSC Advances ◽  
2015 ◽  
Vol 5 (101) ◽  
pp. 83122-83128 ◽  
Author(s):  
Felix R. P. Limberg ◽  
Arunas Miasojedovas ◽  
Patrick Pingel ◽  
Felix Reisbeck ◽  
Silvia Janietz ◽  
...  
Keyword(s):  
Glass Transition ◽  
Electronic Properties ◽  
Significant Influence ◽  
Life Time ◽  
Side Chain ◽  
Hole Transporting ◽  
Solution Processable

The development of crosslinkable materials for solution processable OLEDs presents challenges, especially regarding the adjustment of the glass transition, which has a significant influence on crosslinking kinetics and device life-time.

Arylene bisimides with triarylamine N-substituents as new solution processable organic semiconductors: Synthesis, spectroscopic, electrochemical and electronic properties

2011 ◽  
Vol 161 (15-16) ◽  
pp. 1600-1610 ◽  
Author(s):  
Renata Rybakiewicz ◽  
David Djurado ◽  
Hubert Cybulski ◽  
Ewelina Dobrzynska ◽  
Irena Kulszewicz-Bajer ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Organic Semiconductors ◽  
Solution Processable

Electronic properties of tin iodide hybrid perovskites: effect of indium doping

2018 ◽  
Vol 2 (7) ◽  
pp. 1291-1295 ◽  
Author(s):  
Keisuke Kobayashi ◽  
Hiroyuki Hasegawa ◽  
Yukihiro Takahashi ◽  
Jun Harada ◽  
Tamotsu Inabe
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Carrier Concentration ◽  
Electronic Devices ◽  
Design Strategy ◽  
Metal Doping ◽  
Indium Doping ◽  
Tin Iodide ◽  
Solution Processable

For solution-processable tin iodide cubic perovskites, a small amount of indium doping reduced the conductivity without changing the band gap or the carrier concentration. We demonstrated another possibility of foreign metal doping in tin iodide cubic perovskites and displayed a design strategy for electronic devices using hybrid perovskites.

Solution-Processable Donor-Acceptor Polymers with Modular Electronic Properties and Very Narrow Bandgaps

2014 ◽  
Vol 35 (17) ◽  
pp. 1516-1521 ◽  
Author(s):  
Michael E. Foster ◽  
Benjamin A. Zhang ◽  
Dustin Murtagh ◽  
Yi Liu ◽  
Matthew Y. Sfeir ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Donor Acceptor ◽  
Solution Processable

Solution Processable in-situ Passivated Silicon Nanowires

Nanoscale ◽  
2021 ◽  
Author(s):  
Jun Yan ◽  
Kunpeng Ge ◽  
Han Li ◽  
Xueliang Yang ◽  
Jingwei Chen ◽  
...  
Keyword(s):  
Production Process ◽  
Electronic Properties ◽  
Silicon Nanowires ◽  
Optical And Electronic Properties ◽  
Solution Processable ◽  
Passivated Silicon

The 1D confinement of silicon in the form of a nanowire revives its newness with the emergence of new optical and electronic properties. However, the development of a production process...

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Structure, dynamics and electronic properties of liquid and glassy GeSe2

1997 ◽  
Vol 222 (1-2) ◽  
pp. 348-353
Author(s):  
R Cappelletti
Keyword(s):  
Electronic Properties ◽  
Structure Dynamics

Electronic properties of two coupled Siδ-doped GaAs structures

2002 ◽  
Vol 21 (2) ◽  
pp. 91-95 ◽  
Author(s):  
E. Ozturk ◽  
H. Sari ◽  
Y. Ergun ◽  
I. Sokmen
Keyword(s):  
Electronic Properties
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