Kinetics of gas phase ion–ion recombination in NO++X–→ NO+X for X being chlorine, bromine and iodine

1978 ◽  
Vol 74 (0) ◽  
pp. 63 ◽  
Author(s):  
Nigel A. Burdett ◽  
Allan N. Hayhurst
Keyword(s):  
Gas Phase ◽  
Ion Recombination ◽  
Gas Phase Ion ◽  
Kinetics Of

Kinetics of Gas-phase Ion–Molecule Exchange Reactions

1982 ◽  
Vol 51 (11) ◽  
pp. 1060-1074 ◽  
Author(s):  
Gennadii V Karachevtsev ◽  
A Z Marutkin ◽  
V V Savkin
Keyword(s):  
Gas Phase ◽  
Exchange Reactions ◽  
Gas Phase Ion ◽  
Kinetics Of

Reactivity Trends in the Gas Phase Addition of Acetylene to N-protonated Aryl Radical Cations

2020 ◽  
Author(s):  
Oisin Shiels ◽  
P. D. Kelly ◽  
Cameron C. Bright ◽  
Berwyck L. J. Poad ◽  
Stephen Blanksby ◽  
...  
Keyword(s):  
Gas Phase ◽  
Ion Trap ◽  
Radical Cations ◽  
Rate Coefficients ◽  
Similar Process ◽  
Ion Molecule Reactions ◽  
Aromatic Radicals ◽  
Polycyclic Aromatic ◽  
Gas Phase Ion ◽  
Type Radical

<div> <div> <div> <p>A key step in gas-phase polycyclic aromatic hydrocarbon (PAH) formation involves the addition of acetylene (or other alkyne) to σ-type aromatic radicals, with successive additions yielding more complex PAHs. A similar process can happen for N- containing aromatics. In cold diffuse environments, such as the interstellar medium, rates of radical addition may be enhanced when the σ-type radical is charged. This paper investigates the gas-phase ion-molecule reactions of acetylene with nine aromatic distonic σ-type radical cations derived from pyridinium (Pyr), anilinium (Anl) and benzonitrilium (Bzn) ions. Three isomers are studied in each case (radical sites at the ortho, meta and para positions). Using a room temperature ion trap, second-order rate coefficients, product branching ratios and reaction efficiencies are reported. </p> </div> </div> </div>

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

scholarly journals Triangular Rhodamine Triads and Their Intrinsic Photophysics Revealed from Gas‐Phase Ion Fluorescence Experiments

2021 ◽  
Author(s):  
Ying Zhao ◽  
Emma Rostal Sørensen ◽  
Thomas Toft Lindkvist ◽  
Christina Kjær ◽  
Mogens Brøndsted Nielsen ◽  
...  
Keyword(s):  
Gas Phase ◽  
Gas Phase Ion
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