scholarly journals Low-local-oscillator-power sub-harmonic mixing in 300-GHz band by Fermi-level managed barrier diode

2020 ◽  
Vol 56 (24) ◽  
pp. 1326-1328
Author(s):  
H. Ito ◽  
T. Ishibashi
Author(s):  
Hiroshi Ito ◽  
Norihiko Shibata ◽  
Tadao Nagatsuma ◽  
Tadao Ishibashi

Abstract We developed a novel terahertz-wave detector fabricated on a SiC platform implementing an InP/InGaAs Fermi-level managed barrier (FMB) diode. The FMB diode epi-layers were transferred on a SiC substrate, and a waveguide coupler and filters were monolithically integrated with an FMB diode. Then, fabricated detector chip was assembled in a fundamental mixer module with a WR-3 rectangular-waveguide input port. It exhibited a minimum noise equivalent power as low as 3e-19 W/Hz at around 300 GHz for a local oscillator power of only 30 microwatts.


2002 ◽  
Vol 75 (4-5) ◽  
pp. 359-371
Author(s):  
M. Hidaka ◽  
N. Tokiwa ◽  
M. Yoshimura ◽  
H. Fujii ◽  
Jae-Young Choi ◽  
...  

1987 ◽  
Vol 48 (C7) ◽  
pp. C7-569-C7-571
Author(s):  
A. DELAHAIGUE ◽  
D. COURTOIS ◽  
C. THIEBEAUX ◽  
H. LE CORRE

1988 ◽  
Vol 154 (3) ◽  
pp. 525 ◽  
Author(s):  
V.P. Antropov ◽  
Valentin G. Vaks ◽  
M.I. Katsnel'son ◽  
V.G. Koreshkov ◽  
A.I. Likhtenshtein ◽  
...  

1990 ◽  
Vol 26 (14) ◽  
pp. 1013
Author(s):  
M.-S. Kao ◽  
J. Wu

2019 ◽  
Vol 7 (21) ◽  
pp. 6241-6245 ◽  
Author(s):  
Wei-Wei Yan ◽  
Xiao-Fei Li ◽  
Xiang-Hua Zhang ◽  
Xinrui Cao ◽  
Mingsen Deng

Boron adsorption induces a heavily localized state right at the Fermi level only in the family of W = 3p + 1 and thus spin-splitting occurs spontaneously.


Sign in / Sign up

Export Citation Format

Share Document