Room-temperature continuous-wave operation of a 640 nm AlGaInP visible-light semiconductor laser

1987 ◽  
Vol 23 (24) ◽  
pp. 1327 ◽  
Author(s):  
S. Kawata
2021 ◽  
Vol 42 (11) ◽  
pp. 112801
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang ◽  
...  

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.


2012 ◽  
Vol 101 (24) ◽  
pp. 241110 ◽  
Author(s):  
N. Bandyopadhyay ◽  
Y. Bai ◽  
S. Tsao ◽  
S. Nida ◽  
S. Slivken ◽  
...  

2009 ◽  
Vol 6 (12) ◽  
pp. 847-849 ◽  
Author(s):  
X.M. Duan ◽  
B.Q. Yao ◽  
Y.L. Ju ◽  
Y.Z. Wang ◽  
G.J. Zhao

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