Low threshold InGaAs strained quantum well laser with lateral npn current blocking structure grown by molecular beam epitaxy

1992 ◽  
Vol 28 (15) ◽  
pp. 1419 ◽  
Author(s):  
T. Takamori ◽  
K. Watanabe ◽  
T. Kamijoh
1995 ◽  
Vol 38 (5) ◽  
pp. 1105-1106 ◽  
Author(s):  
J.-I Chyi ◽  
J.-H Gau ◽  
J.-L Shieh ◽  
J.-W Pan ◽  
Y.-J Chan ◽  
...  

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