Low voltage, room temperature, ridge waveguide green-blue diode laser

1993 ◽  
Vol 29 (23) ◽  
pp. 2041 ◽  
Author(s):  
A Salokatve ◽  
H. Jeon ◽  
M. Hovinen ◽  
P. Kelkar ◽  
A.V. Nurmikko ◽  
...  
1993 ◽  
Vol 29 (25) ◽  
pp. 2192 ◽  
Author(s):  
A. Salokatve ◽  
H. Jeon ◽  
J. Ding ◽  
M. Hovinen ◽  
A.V. Nurmikko ◽  
...  

2008 ◽  
Vol 16 (1) ◽  
Author(s):  
P. Karbownik ◽  
R. Sarzała

AbstractRoom-temperature (RT) continuous-wave (CW) operation of the 405-nm ridge-waveguide (RW) InGaN/GaN quantum-well diode lasers equipped with the n-type GaN substrate and two contacts on both sides of the structure has been investigated with the aid of the comprehensive self-consistent simulation model. As expected, the mounting configuration (p-side up or down) has been found to have a crucial impact on the diode laser performance. For the RT CW threshold operation of the otherwise identical diode laser, the p-side up RW laser exhibits as high as nearly 68°C maximal active-region temperature increase whereas an analogous increase for the p-side down laser was equal to only 24°C. Our simulation reveals that the lowest room-temperature lasing threshold may be expected for relatively narrow and deep ridges. For the structure under consideration, the lowest threshold current density of 5.75 kA/cm2 has been determined for the 2.2-μm ridge width and the 400-nm etching depth. Then, the active-region temperature increase was as low as only 24 K over RT. For wider 5-μm ridge, this increase is twice higher. An impact of etching depth is more essential for narrower ridges. Quite high values (between 120 and 140 K) of the characteristic parameter T0 convince very good thermal properties of the above laser.


2021 ◽  
Vol 33 (3) ◽  
pp. 032018
Author(s):  
Hang Yang ◽  
Xiahui Tang ◽  
Chong Hu ◽  
Songjia Liu ◽  
Yuanchao Fan ◽  
...  

2007 ◽  
Author(s):  
Paul Crump ◽  
Steve Patterson ◽  
Weimin Dong ◽  
Mike Grimshaw ◽  
Jun Wang ◽  
...  

Author(s):  
J. L. Costa-Krämer ◽  
N. Garcia ◽  
M. Jonson ◽  
I. V. Krive ◽  
H. Olin ◽  
...  

2020 ◽  
Vol 128 (6) ◽  
pp. 535-541
Author(s):  
Pantelis Kouros ◽  
Dimitrios Dionysopoulos ◽  
Areti Deligianni ◽  
Dimitris Strakas ◽  
Thrasyvoulos Sfeikos ◽  
...  

Author(s):  
Kento Morimoto ◽  
Masahiro Tsukamoto ◽  
Yuji Sato ◽  
Shin-Ichiro Masuno ◽  
Susumu Kato ◽  
...  

2019 ◽  
Vol 1154 ◽  
pp. 91-101
Author(s):  
Eko Pujiyulianto ◽  
Suyitno

Electropolishing is an attractive method for surface smoothing of cardiovascular stent. This study investigated the effect of times of electropolishing on the surface characteristics both are upper surface and surface of the strut of cardiovascular stent after the by die sinking electrical discharge machining (EDM). The observed surface characteristics of the strut were recast layer, surface roughness and brightness. The weight analysis, and the reduction of the width strut were conducted. The recast layer was analyzed by optical microscope qualitatively, the surface roughness was measured by surface texture measuring instrument, the weight analysis and the reduction of width strut were calculated. The stent was made from steel AISI 316 L. The times which were used in the electropolishing were 3 minutes, 7 minutes, and 11 minutes. The experimental results show that the time for smoothing and brightening of stent at room temperature and low voltage 5 V is 7 minutes. The times affect the upper and EDM surface roughness, the weight of stent and the width of strut. The results show that increasing of times, than the value of surface roughness, the weight of stent and the width of strut will decrease, and vice versa. The average surface roughness of EDM surface after electropolishing is in the range of 3.49 – 1.62 µm. The average surface roughness of upper surface after electropolishing is in the range of 0.55-0.22 µm. The weight analysis show that the loss of weight is in the range of 0.12-1.12 %, and the reduction of width strut is in the range of 11.02 – 69.3 %.


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