High transconductance AlGaN/GaN optoelectronic heterostructure field effect transistor

1995 ◽  
Vol 31 (24) ◽  
pp. 2130-2131 ◽  
Author(s):  
M. Asif Khan ◽  
Q. Chen ◽  
M.S. Shur
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
High Transconductance

High-transconductance p-type SiGe modulation-doped field-effect transistor

1995 ◽  
Vol 31 (8) ◽  
pp. 680 ◽  
Author(s):  
M. Arafa ◽  
K. Ismail ◽  
P. Fay ◽  
J.O. Chu ◽  
B.S. Meyerson ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
High Transconductance ◽  
P Type

Very high transconductance InGaAs/InP junction field‐effect transistor with submicrometer gate

1987 ◽  
Vol 50 (9) ◽  
pp. 535-536 ◽  
Author(s):  
J. Y. Raulin ◽  
E. Thorngren ◽  
M. A. di Forte‐Poisson ◽  
M. Razeghi ◽  
G. Colomer
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
High Transconductance ◽  
Very High

scholarly journals Characterization of high-transconductance long-channel hydrogen-terminated polycrystal diamond field effect transistor

2018 ◽  
Vol 67 (6) ◽  
pp. 068101
Author(s):  
Zhang Jin-Feng ◽  
Yang Peng-Zhi ◽  
Ren Ze-Yang ◽  
Zhang Jin-Cheng ◽  
Xu Sheng-Rui ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
High Transconductance ◽  
Long Channel

Very high-transconductance heterojunction field-effect transistor (HFET)

1987 ◽  
Vol 23 (2) ◽  
pp. 77 ◽  
Author(s):  
G.W. Taylor ◽  
M.S. Lebby ◽  
T.Y. Chang ◽  
R.N. Gnall ◽  
N. Sauer ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
High Transconductance ◽  
Very High

FIELD EFFECT NANOTRANSISTOR ON ULTRATHIN SILICON-ON-INSULATOR

2004 ◽  
Vol 03 (01n02) ◽  
pp. 155-160
Author(s):  
Yu. V. NASTAUSHEV ◽  
T. A. GAVRILOVA ◽  
M. M. KACHANOVA ◽  
O. V. NAUMOVA ◽  
I. V. ANTONOVA ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Deep Submicron ◽  
Silicon On Insulator ◽  
Conductive Channel ◽  
Low Threshold ◽  
Effect Transistor ◽  
Ultrathin Soi ◽  
High Transconductance ◽  
Bottom Gate

Peculiarities of the fabrication of field effect transistor (FET) at nanoscaled size on ultrathin silicon-on-insulator (SOI) was studied in details. Two types of FET transistor were successfully realized: in-plane-gate FET (IPGFET) with 40 nm minimum channel size and multichannel top-gate MOSFET on silicon-on-insulator. The deep submicron top-gate of Ti/Au embraces each of the conductive oxidized silicon wires placed with 400 nm pitch. The type and concentration of carries in a conductive channel of the ultrathin SOI was controlled by a bottom gate. The fabricated transistors demonstrated high transconductance and low threshold voltage. Some results of electron properties of the nano-FET transistors are presented.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor
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