Both unipolar and injection SiC devices can be used for high voltage switching
applications; it is not determined, however, for which applications one approach is preferred over
the other. In this paper, simulation studies are used to compare the suitability of unipolar devices, in
this case a JFET (Junction Field Effect Transistor) against an equivalent FCD (Field Controlled
Diode) configuration up to very high voltages. The calculations are performed in a finite element
approach, with commercial drift-diffusion software. Numerous drift layers have been simulated in a
Monte-Carlo approach to ensure that the optimal design of the drift layers for different breakdown is
used. In a static case, purely conductive losses in the drift layer in both unipolar and injection
configuration are compared. Additionally the total losses are studied and compared in switched
applications for different switching frequencies and current levels.
Characterization of high-transconductance long-channel hydrogen-terminated polycrystal diamond field effect transistor