A nonplanar 64-pixel, 2-phase GaAs cermet-gate charge-coupled device (CMCCD) and a planar 128-pixel, 2-phase GaAs CMCCD are described. The former device employs a castellation to provide the "built-in" electric field for controlling the flow of signal charge within the channel, whereas, the latter device uses externally applied electric fields to achieve this control. Both devices have been operated at 46 MHz, demonstrating charge transfer efficiencies of 0.996 and in excess of 0.999, respectively. The application of the planar 2-phase GaAs CMCCD in a 500 or 7.81 MHz transient digitizer module for acquisition and transfer of dc to 250 MHz band-limited signals will also be presented.