Computer technique for solving schottky barrier from dark forward current-voltage characteristics

1980 ◽  
Vol 127 (5) ◽  
pp. 250
Author(s):  
C. Boutrit ◽  
J.C. Georges ◽  
S. Ravelet
Keyword(s):  
Schottky Barrier ◽  
Computer Technique ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

2009 ◽  
Vol 615-617 ◽  
pp. 963-966 ◽  
Author(s):  
Taku Horii ◽  
Tomihito Miyazaki ◽  
Yu Saito ◽  
Shin Hashimoto ◽  
Tatsuya Tanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Schottky Barrier Diodes ◽  
Field Plate ◽  
Forward Current ◽  
Low Dislocation Density ◽  
Current Voltage ◽  
Dislocation Densities ◽  
Current Voltage Characteristics

Gallium nitride (GaN) vertical Schottky barrier diodes (SBDs) with a SiNx field plate (FP) structure on low-dislocation-density GaN substrates have been designed and fabricated. We have successfully achieved the SBD breakdown voltage (Vb) of 680V with the FP structure, in contrast to that of 400V without the FP structure. There was no difference in the forward current-voltage characteristics with a specific on-resistance (Ron) of 1.1mcm2. The figure of merit V2b/Ron of the SBD with the FP structure was 420MWcm-2. The FP structure and the high quality drift layers grown on the GaN substrates with low dislocation densities have greatly contributed to the obtained results.

Fabrication of a 1.7-kV Schottky barrier diode with improved forward current-voltage characteristics

2016 ◽  
Vol 68 (6) ◽  
pp. 810-814
Author(s):  
In Ho Kang ◽  
Moon Kyong Na ◽  
Ogyun Seok ◽  
Jeong Hyun Moon ◽  
Wook Bahng ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics
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