Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics

2011 ◽  
Vol 99 (12) ◽  
pp. 123504 ◽  
Author(s):  
Yuanjie Lv ◽  
Zhaojun Lin ◽  
Lingguo Meng ◽  
Yingxia Yu ◽  
Chongbiao Luan ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Barrier Heights ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Gan Heterostructure

Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

2011 ◽  
Vol 109 (7) ◽  
pp. 074512 ◽  
Author(s):  
Yuanjie Lv ◽  
Zhaojun Lin ◽  
Timothy D. Corrigan ◽  
Jianzhi Zhao ◽  
Zhifang Cao ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Barrier Heights ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Gan Heterostructure

High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

2009 ◽  
Vol 615-617 ◽  
pp. 963-966 ◽  
Author(s):  
Taku Horii ◽  
Tomihito Miyazaki ◽  
Yu Saito ◽  
Shin Hashimoto ◽  
Tatsuya Tanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Schottky Barrier Diodes ◽  
Field Plate ◽  
Forward Current ◽  
Low Dislocation Density ◽  
Current Voltage ◽  
Dislocation Densities ◽  
Current Voltage Characteristics

Gallium nitride (GaN) vertical Schottky barrier diodes (SBDs) with a SiNx field plate (FP) structure on low-dislocation-density GaN substrates have been designed and fabricated. We have successfully achieved the SBD breakdown voltage (Vb) of 680V with the FP structure, in contrast to that of 400V without the FP structure. There was no difference in the forward current-voltage characteristics with a specific on-resistance (Ron) of 1.1mcm2. The figure of merit V2b/Ron of the SBD with the FP structure was 420MWcm-2. The FP structure and the high quality drift layers grown on the GaN substrates with low dislocation densities have greatly contributed to the obtained results.

Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes

2014 ◽  
Vol 778-780 ◽  
pp. 710-713 ◽  
Author(s):  
Hamid Amini Moghadam ◽  
Sima Dimitrijev ◽  
Ji Sheng Han
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Interface Traps ◽  
Barrier Heights ◽  
Current Voltage ◽  
Donor Type ◽  
Current Voltage Characteristics ◽  
Expected Values

This paper presents a physical model based on interface traps to explain both the larger barrier heights of practical Schottky diodes in comparison to the theoretically expected values and the appearance of a knee in the log I–V characteristics. According to this model, acceptor-type interface traps near the valance band increase the Schottky barrier height, which shifts the log I–V characteristic to higher forward-bias voltages. In addition to the acceptor traps, donor-type interface traps can appear near the conduction band, and when they do, they cause the knee in the log I–V characteristics as their energy level falls below the Fermi level and the charge associated with these traps changes from positive to neutral.

Fabrication of a 1.7-kV Schottky barrier diode with improved forward current-voltage characteristics

2016 ◽  
Vol 68 (6) ◽  
pp. 810-814
Author(s):  
In Ho Kang ◽  
Moon Kyong Na ◽  
Ogyun Seok ◽  
Jeong Hyun Moon ◽  
Wook Bahng ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics
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