scholarly journals Study on the gas sensitivity of vanadium-doped molybdenum disulfide to mustard gas

2020 ◽  
Vol 204 ◽  
pp. 01003
Author(s):  
Huaizhang Wang ◽  
Yangyang Wang ◽  
Pengbo Chi ◽  
Huaning Jiang ◽  
Jingfei Chen ◽  
...  
Keyword(s):  
Carbon Monoxide ◽  
Chemical Vapor Deposition ◽  
Nitrogen Dioxide ◽  
Band Gap ◽  
Molybdenum Disulfide ◽  
Gas Sensors ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mustard Gas ◽  
Gas Sensitivity

As a graphene-like material, molybdenum disulfide has similar properties to graphene, but due to its excellent properties such as adjustable band gap, molybdenum disulfide has a broader application in many aspects (such as gas sensors). With the deepening of research, molybdenum disulfide cannot fully meet the needs of researchers due to defects and other reasons. Therefore, researches on doping and compounding of molybdenum disulfide have gradually attracted attention. At present, most of the research on gas sensitivity has focused on harmful gases (such as nitrogen dioxide, ammonia and carbon monoxide, etc.). There are few studies on the erosive chemical toxic mustard gas. In this paper, vanadium-doped molybdenum disulfide were prepared based on chemical vapor deposition, and the gas-sensitive response of vanadium-doped molybdenum disulfide to mustard gas was studied.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

Composition Analysis of Ge Graded Si1-xGex Alloy Films by Capacitance-Voltage Method

2011 ◽  
Vol 383-390 ◽  
pp. 7613-7618
Author(s):  
Y. Yang ◽  
F. Yu ◽  
Ping Han ◽  
R.P. Ge ◽  
L. Yu
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Composition Analysis ◽  
Alloy Films ◽  
Capacitance Voltage ◽  
Capacitance Characteristics ◽  
Contact Barrier

Capacitance-voltage method was used to analyze composition of the Si1-xGex alloy films with a stochiometry gradient of Ge, which were epitaxially grown on Si (100) substrate by chemical vapor deposition. Using the capacitance characteristics of Si1-xGex/Si obtained by applying a reserve bias to the Hg electrode probe, the contact barrier height for Hg/Si1-xGexjunction and Si1-xGex/Si junction, and band gap of SSi1-xGex were estimated respectively. With the band gap of Si1-xGex, composition of Si1-xGex in Hg/Si1-xGex junction and Si1-xGex/Si junction were further obtained. Because analyzed Si1-xGex was formed through bilateral inter-diffusion of Si into the epilayer and Ge into the substrate during the deposition, Ge distribution from surface to substrate in Si1-xGex alloy films can be figured out by fitting to diffusion exponential function. The Ge distribution acquired this way was in accordance with the depth profile by auger electron spectrum.

scholarly journals Morphological Evolution of Vertically Standing Molybdenum Disulfide Nanosheets by Chemical Vapor Deposition

Materials ◽  
2018 ◽  
Vol 11 (4) ◽  
pp. 631 ◽  
Author(s):  
Song Zhang ◽  
Jiajia Liu ◽  
Karla Ruiz ◽  
Rong Tu ◽  
Meijun Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Molybdenum Disulfide ◽  
Vapor Deposition ◽  
Morphological Evolution ◽  
Chemical Vapor ◽  
Molybdenum Disulfide Nanosheets

Spray Chemical Vapor Deposition of CuInS2 Thin Films for Application in Solar Cell Devices

1997 ◽  
Vol 495 ◽  
Author(s):  
Jennifer A. Hollingsworth ◽  
William E. Buhro ◽  
Aloysius F. Hepp ◽  
Philip P. Jenkins ◽  
Mark A. Stan
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fused Silica ◽  
Direct Band Gap ◽  
Cuins2 Thin Films ◽  
Potential Applications ◽  
Direct Band

ABSTRACTChalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300–400 °C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 °C. At even higher temperatures (500 °C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

scholarly journals Molybdenum Disulfide Nanoflakes Grown by Chemical Vapor Deposition on Graphite: Nucleation, Orientation, and Charge Transfer

2020 ◽  
Vol 124 (4) ◽  
pp. 2689-2697 ◽  
Author(s):  
Erik Pollmann ◽  
Juliana M. Morbec ◽  
Lukas Madauß ◽  
Lara Bröckers ◽  
Peter Kratzer ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Charge Transfer ◽  
Molybdenum Disulfide ◽  
Vapor Deposition ◽  
Chemical Vapor

Chemical Vapor Deposition of Cu2O and CuO nanosystems for innovative gas sensors

2009 ◽  
Author(s):  
Elisabetta Comini ◽  
Giorgio Sberveglieri ◽  
Davide Barreca ◽  
Cinzia Sada ◽  
Alberto Gasparotto ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Sensors ◽  
Vapor Deposition ◽  
Chemical Vapor

H2S Gas Sensor Based on WO3 Nanostructures Synthesized via Aerosol Assisted Chemical Vapor Deposition Technique

2019 ◽  
Vol 11 (9) ◽  
pp. 1247-1256 ◽  
Author(s):  
T. Shujah ◽  
M. Ikram ◽  
A. R. Butt ◽  
M. K. Shahzad ◽  
K. Rashid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Sensors ◽  
Vapor Deposition ◽  
Gas Sensing ◽  
Chemical Vapor ◽  
Desorption Kinetics ◽  
Nanostructured Surfaces ◽  
Vapor Deposition Technique ◽  
H2s Gas Sensor ◽  
Adsorption Desorption

Herein we demonstrate tungsten oxide (WO3 nanostructures based resistive type sensors for hydrogen sulfide (H2S) gas sensing utility. The WO3 dynamic layers have been deposited upon alumina substrates pre-patterned with gold (Au) interdigitated electrodes. For comparative study, two distinct WO3 nanostructures (S-425 and S-450) have been synthesized using Aerosol Assisted Chemical Vapor Deposition (AACVD) technique at varied deposition temperatures i.e., 425 and 450 °C, respectively. The gas detecting properties of both sensors were investigated against varied concentration (0-60 ppm) of H2S gas levels. The electrical resistance of fabricated gas detectors has been observed at DC bias of 5 V and low operating temperature 250 °C. Specifically, when concentration of H2S gas increases from 0-10 ppm, average resistance of the S-425 and S-450 gas sensors was observed to decrease by 96.5% and 97.6%, respectively. In general, the sensing mechanism of gas sensors proposed in this work can be associated with ionosorption of oxygen species over WO3 nanostructured surfaces. However, the significantly enhanced sensing performance of S-450 sensor may be attributed to improved crystallinity in its structure and improved ions adsorption/desorption kinetics at nanorods surface morphology.

Sign in / Sign up

Export Citation Format

Share Document