scholarly journals Long wavelength Infrared Detection, Bands Structure and effective mass in InAs/GaSb Nanostructure Superlattice

2021 ◽  
Vol 229 ◽  
pp. 01036
Author(s):  
Merieme Benaadad ◽  
Abdelhakim Nafidi ◽  
Samir Melkoud ◽  
Abderrazak Boutramine ◽  
Ali khalal
Keyword(s):  
Effective Mass ◽  
Infrared Detector ◽  
Infrared Detection ◽  
Dimensional System ◽  
Cutoff Wavelength ◽  
Density Of State ◽  
Valence Band Offset ◽  
Long Wavelength ◽  
Scattering Time ◽  
Long Wavelength Infrared

We have investigated in the bands structure and the effective mass, respectively, along the growth axis and in the plane of InAs (d1=48.5Å)/GaSb(d2=21.5Å) type II superlattice (SL), performed in the envelop function formalism. We studied the semiconductor to semimetal transition and the evolutions of the optical band gap, Eg(Γ), as a function of d1, the valence band offset Λ and the temperature. In the range of 4.2–300 K, the corresponding cutoff wavelength ranging from 7.9 to 12.6 µm, which demonstrates that this sample can be used as a long wavelength infrared detector. The position of the Fermi level, EF = 512 meV, and the computed density of state indicates that this sample is a quasi-two-dimensional system and exhibits n type conductivity. Further, we calculated the transport scattering time and the velocity of electrons on the Fermi surface. These results were compared and discussed with the available data in the literature.

scholarly journals High-Performance Anodic Vulcanization-Pretreated Gated P+–π–M–N+ InAs/GaSb Superlattice Long-Wavelength Infrared Detector

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Ju Sun ◽  
Nong Li ◽  
Qing-Xuan Jia ◽  
Xuan Zhang ◽  
Dong-Wei Jiang ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Bias Voltage ◽  
Infrared Detectors ◽  
Infrared Detector ◽  
Electrical Performance ◽  
Cutoff Wavelength ◽  
Gate Electrode ◽  
Long Wavelength ◽  
Specific Detectivity ◽  
Long Wavelength Infrared

AbstractThe InAs/GaSb superlattice infrared detector has been developed with tremendous effort. However, the performance of it, especially long-wavelength infrared detectors (LWIR), is still limited by the electrical performance and optical quantum efficiency (QE). Forcing the active region to be p-type through proper doping can highly improve QE, and the gating technique can be employed to greatly enhance electrical performance. However, the saturation bias voltage is too high. Reducing the saturation bias voltage has broad prospects for the future application of gate voltage control devices. In this paper, we report that the gated P+–π–M–N+ InAs/GaSb superlattice long-wavelength infrared detectors exhibit different π region doping levels that have a reduced minimum saturation bias at − 10 V with a 200-nm SiO2 layer after a simple and effective anodic vulcanization pretreatment. The saturation gate bias voltage is much lower than − 40 V that reported with the same thickness of a 200-nm SiO2 passivation layer and similar structure. The optical and electrical characterization indicates that the electrical and optical performance of the device would be weakened by excessive doping concentration. At 77 K, the 50% cutoff wavelength of the device is about 8 µm, the 100% cutoff wavelength is 10 µm, the maximum quantum efficiency is 62.4%, the maximum of responsivity is 2.26 A/W at 5 µm, and the maximum RA of the device is 1259.4 Ω cm2. Besides, the specific detectivity of Be 780 °C-doped detector without gate electrode exhibits a peak of 5.6 × 1010 cm Hz1/2/W at 5 µm with a 70-mv reverse bias voltage, which is more than three times that of Be 820 °C-doped detector. Moreover, the peak specific detectivity could be further increased to 1.3 × 1011 cm Hz1/2/W at 5 µm with a 10-mv reserve bias voltage that has the bias of − 10 V at the gate electrode.

Optimization of absorption in InAs/InxGa1-xSb superlattices for long-wavelength infrared detection

1995 ◽  
Vol 17 (4) ◽  
pp. 373 ◽  
Author(s):  
Frank Szmulowicz ◽  
Eric R. Heller ◽  
Kent Fisher ◽  
Frank L. Madarasz
Keyword(s):  
Infrared Detection ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Cut-off wavelength manipulation of pixel-level plasmonic microcavity for long wavelength infrared detection

2019 ◽  
Vol 114 (6) ◽  
pp. 061104 ◽  
Author(s):  
Yuwei Zhou ◽  
Zhifeng Li ◽  
Xiaohao Zhou ◽  
Jing Zhou ◽  
Yuanliao Zheng ◽  
...  
Keyword(s):  
Infrared Detection ◽  
Long Wavelength ◽  
Long Wavelength Infrared

A Long-Wavelength Infrared Photoluminescence Spectrometer for the Characterization of Semiconductor Materials

1994 ◽  
Vol 299 ◽  
Author(s):  
R. P. Wright ◽  
S. E. Kohn ◽  
N. M. Haegel
Keyword(s):  
Infrared Detector ◽  
Optical Emission ◽  
High Sensitivity ◽  
Radiation Emission ◽  
Long Wavelength ◽  
Ion Laser ◽  
Detector Materials ◽  
Long Wavelength Infrared ◽  
Argon Ion

AbstractA new photoluminescence spectrometer has been developed for the characterization of optical emission in the 2.5 to 14.1 micron wavelength range. This instrument provides high sensitivity for the detection of interband and defect luminescence in a variety of infrared detector materials. The spectrometer utilizes a solid state photomultiplier detector and a circular variable filter, which serves as the resolving element. The entire spectrometer is cooled to 5K in order to decrease thermal radiation emission. Band-edge luminescence at 10.1 microns from HgCdTe samples has been readily detected with argon-ion laser excitation powers less than 70 mW/cm2. Representative spectra from HgCdTe and other infrared detector materials are presented.

Development of long-wavelength infrared detector and its space-based application requirements

2019 ◽  
Vol 28 (2) ◽  
pp. 028504 ◽  
Author(s):  
Junku Liu ◽  
Lin Xiao ◽  
Yang Liu ◽  
Longfei Cao ◽  
Zhengkun Shen
Keyword(s):  
Infrared Detector ◽  
Long Wavelength ◽  
Application Requirements ◽  
Long Wavelength Infrared

Germanium Far Infrared Blocked Impurity Band Detectors

1997 ◽  
Vol 484 ◽  
Author(s):  
C. S. Olsen ◽  
J. W. Beeman ◽  
W. L. Hansen ◽  
E. E. Hallerab
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Impurity Band ◽  
Infrared Detection ◽  
Long Wavelength ◽  
Current Voltage ◽  
Heavily Doped ◽  
Absorbing Layer ◽  
Blocked Impurity Band Detectors ◽  
Long Wavelength Infrared

AbstractWe report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.

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