Nickel and gold identification in p-type silicon through TDLS: a modeling study

In Silicon, impurities introduce recombination centers and degrade the minority carrier lifetime. It is therefore important to identify the nature of these impurities through their characteristics: the capture cross section σ and the defect level Et. For this purpose, a study of the bulk lifetime of minority carriers can be carried out. The temperature dependence of the lifetime based on the Shockley-Read-Hall (SRH) statistic and related to recombination through defects is studied. Nickel and gold in p-type Si have been selected for the SRH lifetime modeling. The objective of the analysis is to carry out a study to evaluate gold and nickel identification prior to temperature-dependent lifetime measurements using the microwave phase-shift (μW-PS) technique. The μW-PS is derived from the PCD technique and is sensitive to lower impurity concentrations. It has been shown that both gold and nickel can be unambiguously identified from the calculated TDLS curves.

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Surface Passivation of Silicon Wafers by Iodine-Ethanol (I-E) for Minority Carrier Lifetime Measurements

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.652-654.901 ◽

2013 ◽

Vol 652-654 ◽

pp. 901-905 ◽

Cited By ~ 2

Author(s):

Jing Wei Chen ◽

Lei Zhao ◽

Hong Wei Diao ◽

Bao Jun Yan ◽

Su Zhou ◽

...

Keyword(s):

Silicon Surface ◽

Carrier Lifetime ◽

Surface Passivation ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Lifetime Measurements ◽

P Type ◽

Different Thickness ◽

Minority Carriers

The effective minority carrier lifetime (τeff) depends upon the quality of surface passivation, which by means of the microwave photoconductance decays (μPCD) method. The effective minority carrier lifetime (τeff) cannot reveal the real bulk lifetime of minority carriers (τb) . We have applied iodine-ethanol (I-E) treatment to silicon surface at different molar concentrations and shown that the effective concentrations ranges was 0.08mol/L~0.16 mol/L, the maximum The effective minority carrier lifetime (τeff) of n-type monocrystalline and p-type monocrystalline was 973.71μs and 362.6μs, respectively. We also accurately evaluate the bulk lifetime of minority carriers by measured with different thickness of silicon substrate.

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Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.295 ◽

2009 ◽

Vol 615-617 ◽

pp. 295-298 ◽

Cited By ~ 2

Author(s):

Laurent Ottaviani ◽

Olivier Palais ◽

Damien Barakel ◽

Marcel Pasquinelli

Keyword(s):

Absorption Spectra ◽

Carrier Lifetime ◽

Minority Carrier ◽

Optical Excitation ◽

Minority Carrier Lifetime ◽

Lifetime Measurements ◽

Recombination Processes ◽

Photoconductivity Decay ◽

P Type ◽

Non Destructive

We report on measurements of the minority carrier lifetime for different epitaxial 4H-SiC layers by using the microwave photoconductivity decay (µ-PCD) method. This is a non-contacting, non-destructive method very useful for the monitoring of recombination processes in semiconductor material. Distinct samples have been analyzed, giving different lifetime values. Transmittance and absorption spectra have also been carried out. The n-type layers, giving rise to a specific absorption peak near 470 nm, are not sensitive to optical excitation for the used wavelengths, as opposite to p-type layers whose lifetime values depend on thickness and doping.

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Temperature-dependent minority-carrier lifetime measurements of red AlGaAs light emitting diodes

Journal of Electronic Materials ◽

10.1007/bf02655456 ◽

1995 ◽

Vol 24 (10) ◽

pp. 1407-1412 ◽

Cited By ~ 4

Author(s):

F. M. Steranka ◽

D. C. Defevere ◽

Camras ◽

S. L. Rudaz ◽

D. K. Mc Elfresh ◽

...

Keyword(s):

Light Emitting Diodes ◽

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Temperature Dependent ◽

Lifetime Measurements ◽

Light Emitting

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Characterization of Ga Co-Doping mc-Si Ingot Made of Solar-Grade Silicon Purified by Metallurgical Route

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.703.58 ◽

2013 ◽

Vol 703 ◽

pp. 58-62 ◽

Cited By ~ 1

Author(s):

Xian Pei Ren ◽

Peng Wu ◽

Shuai Li ◽

Hao Ran Cheng ◽

Wen Xiu Gao ◽

...

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Solar Grade Silicon ◽

Lifetime Measurements ◽

Standard Material ◽

Co Doping ◽

Grade Silicon ◽

P Type

In this paper, we investigated the characterization of a gallium co-doping multicrystalline silicon ingot made of solar-grade silicon purified by metallurgical route. It is shown that the addition of gallium yields a fully p-type ingot and resistivity distribution in the range from 1.2 Ω.cm to1.7 Ω.cm along the full ingot height. Minority carrier lifetime measurements indicate that this material is suitable for the production of solar cells with comparable efficiencies to standard material. In addition, gallium addition in compensated silicon during ingot casting is proved to be very prospective for controlling the resistivity and increasing material yield of ingot.

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Minority Carrier Lifetime Measurements on 4H-SiC Epiwafers by Time-Resolved Photoluminescence and Microwave Detected Photoconductivity

Materials Science Forum ◽

10.4028/www.scientific.net/msf.963.313 ◽

2019 ◽

Vol 963 ◽

pp. 313-317

Author(s):

Jan Beyer ◽

Nadine Schüler ◽

Jürgen Erlekampf ◽

Birgit Kallinger ◽

Patrick Berwian ◽

...

Keyword(s):

Room Temperature ◽

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Temperature Dependent ◽

Lifetime Measurements ◽

Time Resolved ◽

Excess Carrier ◽

Time Resolved Photoluminescence ◽

Different Thickness

Temperature dependent microwave detected photoconductivity MDP and time-resolved photoluminescence TRPL were employed to investigate the carrier lifetime in CVD grown 4H-SiC epilayers of different thickness. The minority carrier lifetime may be found from both theMDP and defect PL decay at room temperature for all epilayers, whereas the near bandedge emission (NBE) decay is much faster for thin epilayers (<17 μm) due to the substrate proximity and only follows the minority carrier lifetime for thicker samples at lower excess carrier concentrations.

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On the Auger Recombination Process in P-Type Lpe HgCdTe

MRS Proceedings ◽

10.1557/proc-90-287 ◽

1986 ◽

Vol 90 ◽

Cited By ~ 7

Author(s):

J. S. Chen ◽

J. Bajaj ◽

W. E. Tennant ◽

D. S. Lo ◽

M. Brown ◽

...

Keyword(s):

Liquid Phase ◽

Auger Recombination ◽

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Recombination Process ◽

Layer Model ◽

Lifetime Measurements ◽

Double Layer Model ◽

P Type

ABSTRACTMinority carrier lifetime measurements at 77K were carried out in ptype liquid phase epitaxial (LPE) Hg 1-xCdx Te/CdTe (x = 0.22) using the photoconductive decay technique. Lifetimes of 20 to 7000 ns were obtained in samples with hole concentrations, p, in the range 1014 to 1016 cm-3. The hole concentrations were determineg by analyzing the Hall data using a double-layer model. It was found that the minority carrier lifetime is inversely proportional to p01.86. This result demonstrates that the Auger mechanism may be the dominant recombination process in p-type LPE Hg0.78 Cd0.22Te/CdTe. The temperature dependence of minority carrier lifetime was also measured between 10 and 200K for several samples.

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Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.440.82 ◽

2013 ◽

Vol 440 ◽

pp. 82-87 ◽

Cited By ~ 2

Author(s):

Mohammad Jahangir Alam ◽

Mohammad Ziaur Rahman

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Multicrystalline Silicon ◽

Recombination Lifetime ◽

Spatially Resolved ◽

Carrier Recombination ◽

Negative Role ◽

P Type ◽

The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

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Resistivity dependence of minority carrier lifetime and cell performance in p-type dendritic web silicon ribbon

Solid-State Electronics ◽

10.1016/s0038-1101(01)00253-2 ◽

2001 ◽

Vol 45 (12) ◽

pp. 1973-1978 ◽

Cited By ~ 3

Author(s):

Mohamed Hilali ◽

Abasifreke Ebong ◽

Ajeet Rohatgi ◽

Daniel L Meier

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Cell Performance ◽

Silicon Ribbon ◽

P Type

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Two Carrier Sensitization as a Spectroscopic Tool for a-Si:H

MRS Proceedings ◽

10.1557/proc-557-439 ◽

1999 ◽

Vol 557 ◽

Cited By ~ 4

Author(s):

L.F. Fonseca ◽

S.Z. Weisz ◽

R. Rapaport ◽

I. Balberg

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Thermal Quenching ◽

Minority Carrier Lifetime ◽

Dangling Bond ◽

Recent Letter ◽

Recombination Centers ◽

Spectroscopic Tool ◽

Hydrogenated Amorphous ◽

Effect Of Light

AbstractIn a recent letter we have reported the first observation of the phenomenon of minority carrier-lifetime sensitization in hydrogenated amorphous silicon (a-Si:H). We find now that combining the study of this phenomenon with the study of the well-known phenomenon of majority carrier lifetime sensitization, in this material, can provide direct information on its density of states (DOS) distribution. This finding is important in view of the limitations associated with other methods designed for the same purpose. We have carried out then an experimental study of the effect of light soaking on the phototransport in a-Si:H. We found that the increase of the dangling bond concentration with light soaking affects the sensitization and thermal quenching of the majority carriers lifetime. Using computer simulations, we further show that the details of the observations associated with the sensitization effect yield semiquantitative information on the concentration and character of the recombination centers in a-Si:H.

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