Schottky diodes as a possible supplementary method for ionic transport investigations in semiconducting ionic solids — application to n-CdF2

1983 ◽  
Vol 44 (4) ◽  
pp. 553-558
Author(s):  
R.J. Iwanowski ◽  
A. Lemańska-Bajorek ◽  
J.M. Langer
Author(s):  
Minu Mathew ◽  
Chandra Sekhar Rout

This review details the fundamentals, working principles and recent developments of Schottky junctions based on 2D materials to emphasize their improved gas sensing properties including low working temperature, high sensitivity, and selectivity.


2020 ◽  
Author(s):  
Marvin Kraft ◽  
Lara Gronych ◽  
Theodosios Famprikis ◽  
Saneyuki Ohno ◽  
Wolfgang Zeier

<p>Sulfidic sodium ion conductors are currently investigated for the possible use in all-solid-state sodium ion batteries. The design of high performing electrolytes in terms of temperature-dependent ionic transport is based upon the fundamental understanding of structure – transport relationships within the given structural phase boundaries inherent to the investigated materials class. In this work, the Na<sup>+</sup> superionic structural family of Na<sub>11</sub>Sn<sub>2</sub>PS<sub>12</sub> is explored by using the systematic antimony substitution with phosphorous in Na<sub>11+<i>x</i></sub>Sn<sub>2+<i>x</i></sub>(Sb<sub>1-<i>y</i></sub>P<i><sub>y</sub></i>)<sub>1-<i>x</i></sub>S<sub>12</sub>. A combination of Rietveld refinements against X-ray synchrotron diffraction data with electrochemical impedance spectroscopy is used to monitor the changes in the anionic framework, the Na<sup>+</sup> substructure and the ionic transport. A new simplified descriptor for the average Na<sup>+</sup> diffusion pathways, the average Na<sup>+</sup> polyhedral volume is introduced, which is used to correlate the contraction of the overall lattice and the found activation barriers in the system. This study exemplifies how substitution affects diffusion pathways in ionic conductors and widens the knowledge about the related structural motifs and their influence on the ionic transport in this novel class of ionic conductors.</p>


2019 ◽  
Author(s):  
Roman Schlem ◽  
Michael Ghidiu ◽  
Sean Culver ◽  
Anna-Lena Hansen ◽  
Wolfgang Zeier

<p>The lithium argyrodites Li<sub>6</sub>PS<sub>5</sub>X (X = Cl, Br, I) have been gaining momentum as candidates for electrolytes in all-solid-state batteries. While these materials have been well-characterized structurally, the influences of the static and dynamic lattice properties are not fully understood. Recent improvements to the ionic conductivity of Li<sub>6</sub>PS<sub>5</sub>I (which as a parent compound is a poor ionic conductor) via elemental substitutions have shown that a multitude of influences affect the ionic transport in the lithium argyrodites, and that even poor conductors in this class have room left for improvement.</p><p>Here we explore the influence of isoelectronic substitution of sulfur with selenium in Li<sub>6</sub>PS<sub>5-<i>x</i></sub>Se<i><sub>x</sub></i>I. Using a combination of X-ray diffraction, impedance spectroscopy, Raman spectroscopy, and pulse-echo speed of sound measurements,we explore the influence of the static and dynamic lattice on the ionic transport. The substitution of S<sup>2-</sup>with Se<sup>2- </sup>broadens the diffusion pathways and structural bottlenecks, as well as leading to a softer more polarizable lattice, all of which lower the activation barrier and lead to an increase in the ionic conductivity. This work sheds light on ways to systematically understand and improve the functional properties of this exciting material family. </p>


2019 ◽  
Author(s):  
Ajay Gautam ◽  
Marcel Sadowski ◽  
Nils Prinz ◽  
Henrik Eickhoff ◽  
Nicolo Minafra ◽  
...  

<p>Lithium argyrodite superionic conductors are currently being investigated as solid electrolytes for all-solid-state batteries. Recently, in the lithium argyrodite Li<sub>6</sub>PS<sub>5</sub>X (X = Cl, Br, I), a site-disorder between the anionsS<sup>2–</sup>and X<sup>–</sup>has been observed, which strongly affects the ionic transport and appears to be a function of the halide present. In this work, we show how such disorder in Li<sub>6</sub>PS<sub>5</sub>Br can be engineered <i>via</i>the synthesis method. By comparing fast cooling (<i>i.e. </i>quenching) to more slowly cooled samples, we find that anion site-disorder is higher at elevated temperatures, and that fast cooling can be used to kinetically trap the desired disorder, leading to higher ionic conductivities as shown by impedance spectroscopy in combination with <i>ab-initio</i>molecular dynamics. Furthermore, we observe that after milling, a crystalline lithium argyrodite can be obtained within one minute of heat treatment. This rapid crystallization highlights the reactive nature of mechanical milling and shows that long reaction times with high energy consumption are not needed in this class of materials. The fact that site-disorder induced <i>via</i>quenching is beneficial for ionic transport provides an additional approach for the optimization and design of lithium superionic conductors.</p>


Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.


Author(s):  
Mark Morris ◽  
James Mohr ◽  
Esteban Ortiz ◽  
Steven Englebretson

Abstract Determination of metal bridging failures on plastic encapsulated devices is difficult due to the metal etching effects that occur while removing many of the plastic mold compounds. Typically, the acids used to remove the encapsulation are corrosive to the metals that are found within the device. Thus, decapsulation can result in removal of the failure mechanism. Mechanical techniques are often not successful due to damage that results in destruction of the die and failure mechanism. This paper discusses a novel approach to these types of failures using a silicon etch and a backside evaluation. The desirable characteristics of the technique would be to remove the silicon and leave typical device metals unaffected. It would also be preferable that the device passivation and oxides not be etched so that the failure location is not disturbed. The use of Tetramethylammonium Hydroxide (TMAH), was found to fit these prerequisites. The technique was tested on clip attached Schottky diodes that exhibited resistive shorting. The use of the TMAH technique was successful at exposing thin solder bridges that extruded over the edge of the die resulting in failure.


1977 ◽  
Vol 13 (17) ◽  
pp. 495
Author(s):  
Nobuo Hashizume ◽  
Shoei Kataoka ◽  
Kazutaka Tomizawa

Sign in / Sign up

Export Citation Format

Share Document